DE3218992C2 - - Google Patents
Info
- Publication number
- DE3218992C2 DE3218992C2 DE19823218992 DE3218992A DE3218992C2 DE 3218992 C2 DE3218992 C2 DE 3218992C2 DE 19823218992 DE19823218992 DE 19823218992 DE 3218992 A DE3218992 A DE 3218992A DE 3218992 C2 DE3218992 C2 DE 3218992C2
- Authority
- DE
- Germany
- Prior art keywords
- memory
- address
- eeprom
- subcircuits
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000006870 function Effects 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 5
- 230000002950 deficient Effects 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008672 reprogramming Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823218992 DE3218992A1 (de) | 1982-05-19 | 1982-05-19 | Monolithisch integrierter schaltkreis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823218992 DE3218992A1 (de) | 1982-05-19 | 1982-05-19 | Monolithisch integrierter schaltkreis |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3218992A1 DE3218992A1 (de) | 1983-11-24 |
| DE3218992C2 true DE3218992C2 (enrdf_load_stackoverflow) | 1990-04-12 |
Family
ID=6164092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823218992 Granted DE3218992A1 (de) | 1982-05-19 | 1982-05-19 | Monolithisch integrierter schaltkreis |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3218992A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19844944C1 (de) * | 1998-09-30 | 2000-02-10 | Siemens Ag | Integrierte Schaltungsanordnung mit einer Konfigurations-Baugruppe |
| DE10126567A1 (de) * | 2001-05-31 | 2002-12-05 | Infineon Technologies Ag | Integrierte Schaltung |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2605687B2 (ja) * | 1986-04-17 | 1997-04-30 | 三菱電機株式会社 | 半導体装置 |
| JPH01280923A (ja) * | 1988-05-07 | 1989-11-13 | Mitsubishi Electric Corp | 半導体集積回路装置 |
-
1982
- 1982-05-19 DE DE19823218992 patent/DE3218992A1/de active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19844944C1 (de) * | 1998-09-30 | 2000-02-10 | Siemens Ag | Integrierte Schaltungsanordnung mit einer Konfigurations-Baugruppe |
| US6160732A (en) * | 1998-09-30 | 2000-12-12 | Siemens Aktiengesellschaft | Integrated circuit with a configuration assembly |
| DE10126567A1 (de) * | 2001-05-31 | 2002-12-05 | Infineon Technologies Ag | Integrierte Schaltung |
| DE10126567B4 (de) * | 2001-05-31 | 2006-01-05 | Infineon Technologies Ag | Integrierte Schaltung |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3218992A1 (de) | 1983-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE4207934C2 (de) | Nichtflüchtige Halbleiterspeichervorrichtung und Programmierverfahren für eine nichtflüchtige Halbleiterspeichervorrichtung | |
| DE2313917C3 (de) | Speicher mit redundanten Speicherstellen | |
| DE4035660C2 (de) | Elektrisch programmierbare Speichereinrichtung und Verfahren zum Zugreifen/Programmieren von Speicherzellen | |
| DE3936676C2 (enrdf_load_stackoverflow) | ||
| DE19880311B3 (de) | Nichtflüchtige Speicherstruktur | |
| DE69227413T2 (de) | Zwischenspeicherschaltung für Daten mit einer nichtlöschbaren Speicherzelle | |
| DE4014117C2 (enrdf_load_stackoverflow) | ||
| DE3875767T2 (de) | Halbleiter-festwertspeichereinrichtung. | |
| DE68924740T2 (de) | Halbleiterspeicherzellen und Halbleiterspeichergerät mit diesen Zellen. | |
| DE3148806C2 (enrdf_load_stackoverflow) | ||
| DE4407732C2 (de) | Nicht-flüchtiger Halbleiterspeicher | |
| DE3839114A1 (de) | Nichtfluechtige dynamische halbleiterspeicheranordnung mit nand-zellenstruktur | |
| DE2601622B2 (de) | Lösch- und programmierbare MOS-Festwertspeicheranordnung | |
| DE4213741C2 (de) | Speichermatrix mit in Zeilen und Spalten angeordneten Speicherzellen | |
| DE4121053C2 (de) | Speicherzelle mit Floating-Gate-Transistor | |
| DE3714980C2 (enrdf_load_stackoverflow) | ||
| EP0088815B1 (de) | Elektrisch löschbare Speichermatrix (EEPROM) | |
| EP0100772B1 (de) | Elektrisch programmierbare Speichermatrix | |
| DE2514582B1 (de) | Schaltung zur erzeugung von leseimpulsen | |
| DE68918830T2 (de) | Nichtflüchtige Halbleiterspeicheranordnung, fähig um einen durch einen Überlöschungszustand verursachten Lesefehler zu verhindern. | |
| DE3833726C2 (enrdf_load_stackoverflow) | ||
| DE69326154T2 (de) | Integrierte Schaltung für die Programmierung einer Speicherzelle eines nicht flüchtigen Speicherregisters | |
| DE3218992C2 (enrdf_load_stackoverflow) | ||
| EP0089397A1 (de) | Integrierte Speichermatrix mit nichtflüchtigen, umprogrammierbaren Speicherzellen | |
| DE68917896T2 (de) | Integrierte Halbleiterschaltung, fähig ein Ereignis einer fehlerhaften Wirkung wegen Störungen zu verhindern. |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |