DE3218992A1 - Monolithisch integrierter schaltkreis - Google Patents
Monolithisch integrierter schaltkreisInfo
- Publication number
- DE3218992A1 DE3218992A1 DE19823218992 DE3218992A DE3218992A1 DE 3218992 A1 DE3218992 A1 DE 3218992A1 DE 19823218992 DE19823218992 DE 19823218992 DE 3218992 A DE3218992 A DE 3218992A DE 3218992 A1 DE3218992 A1 DE 3218992A1
- Authority
- DE
- Germany
- Prior art keywords
- memory
- address
- eeprom
- field
- subcircuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 claims description 149
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000006870 function Effects 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000002950 deficient Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008672 reprogramming Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823218992 DE3218992A1 (de) | 1982-05-19 | 1982-05-19 | Monolithisch integrierter schaltkreis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823218992 DE3218992A1 (de) | 1982-05-19 | 1982-05-19 | Monolithisch integrierter schaltkreis |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3218992A1 true DE3218992A1 (de) | 1983-11-24 |
| DE3218992C2 DE3218992C2 (enrdf_load_stackoverflow) | 1990-04-12 |
Family
ID=6164092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823218992 Granted DE3218992A1 (de) | 1982-05-19 | 1982-05-19 | Monolithisch integrierter schaltkreis |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3218992A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3712178A1 (de) * | 1986-04-17 | 1987-10-22 | Mitsubishi Electric Corp | Halbleitereinrichtung |
| DE3911450A1 (de) * | 1988-05-07 | 1989-11-16 | Mitsubishi Electric Corp | Integrierte halbleiterschaltung mit waehlbaren betriebsfunktionen |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19844944C1 (de) * | 1998-09-30 | 2000-02-10 | Siemens Ag | Integrierte Schaltungsanordnung mit einer Konfigurations-Baugruppe |
| DE10126567B4 (de) * | 2001-05-31 | 2006-01-05 | Infineon Technologies Ag | Integrierte Schaltung |
-
1982
- 1982-05-19 DE DE19823218992 patent/DE3218992A1/de active Granted
Non-Patent Citations (1)
| Title |
|---|
| NICHTS ERMITTELT * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3712178A1 (de) * | 1986-04-17 | 1987-10-22 | Mitsubishi Electric Corp | Halbleitereinrichtung |
| US4808844A (en) * | 1986-04-17 | 1989-02-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| DE3911450A1 (de) * | 1988-05-07 | 1989-11-16 | Mitsubishi Electric Corp | Integrierte halbleiterschaltung mit waehlbaren betriebsfunktionen |
| US4985641A (en) * | 1988-05-07 | 1991-01-15 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device having selectable operational functions |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3218992C2 (enrdf_load_stackoverflow) | 1990-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |