GB1419970A - Field effect transistor memory circuits - Google Patents
Field effect transistor memory circuitsInfo
- Publication number
- GB1419970A GB1419970A GB5989872A GB5989872A GB1419970A GB 1419970 A GB1419970 A GB 1419970A GB 5989872 A GB5989872 A GB 5989872A GB 5989872 A GB5989872 A GB 5989872A GB 1419970 A GB1419970 A GB 1419970A
- Authority
- GB
- United Kingdom
- Prior art keywords
- threshold
- read signal
- turned
- select
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 230000004048 modification Effects 0.000 abstract 2
- 238000012986 modification Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP133572A JPS568438B2 (enrdf_load_stackoverflow) | 1971-12-29 | 1971-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1419970A true GB1419970A (en) | 1975-12-31 |
Family
ID=11498613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5989872A Expired GB1419970A (en) | 1971-12-29 | 1972-12-28 | Field effect transistor memory circuits |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS568438B2 (enrdf_load_stackoverflow) |
CA (1) | CA986223A (enrdf_load_stackoverflow) |
DE (1) | DE2264067A1 (enrdf_load_stackoverflow) |
GB (1) | GB1419970A (enrdf_load_stackoverflow) |
NL (1) | NL7217793A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2988331A1 (en) * | 2000-08-14 | 2016-02-24 | SanDisk 3D LLC | Semiconductor memory device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50134739A (enrdf_load_stackoverflow) * | 1974-04-15 | 1975-10-25 | ||
JPS5443634A (en) * | 1977-09-13 | 1979-04-06 | Nippon Telegr & Teleph Corp <Ntt> | Memory erasing method |
-
1971
- 1971-12-29 JP JP133572A patent/JPS568438B2/ja not_active Expired
-
1972
- 1972-12-28 GB GB5989872A patent/GB1419970A/en not_active Expired
- 1972-12-28 CA CA160,103A patent/CA986223A/en not_active Expired
- 1972-12-29 DE DE2264067A patent/DE2264067A1/de not_active Ceased
- 1972-12-29 NL NL7217793A patent/NL7217793A/xx not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2988331A1 (en) * | 2000-08-14 | 2016-02-24 | SanDisk 3D LLC | Semiconductor memory device |
US9559110B2 (en) | 2000-08-14 | 2017-01-31 | Sandisk Technologies Llc | Dense arrays and charge storage devices |
US10008511B2 (en) | 2000-08-14 | 2018-06-26 | Sandisk Technologies Llc | Dense arrays and charge storage devices |
US10644021B2 (en) | 2000-08-14 | 2020-05-05 | Sandisk Technologies Llc | Dense arrays and charge storage devices |
Also Published As
Publication number | Publication date |
---|---|
JPS4874128A (enrdf_load_stackoverflow) | 1973-10-05 |
CA986223A (en) | 1976-03-23 |
JPS568438B2 (enrdf_load_stackoverflow) | 1981-02-24 |
NL7217793A (enrdf_load_stackoverflow) | 1973-07-03 |
DE2264067A1 (de) | 1973-07-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |