DE2241870C3 - Siliziumnitrid-Ätzverfahren - Google Patents

Siliziumnitrid-Ätzverfahren

Info

Publication number
DE2241870C3
DE2241870C3 DE2241870A DE2241870A DE2241870C3 DE 2241870 C3 DE2241870 C3 DE 2241870C3 DE 2241870 A DE2241870 A DE 2241870A DE 2241870 A DE2241870 A DE 2241870A DE 2241870 C3 DE2241870 C3 DE 2241870C3
Authority
DE
Germany
Prior art keywords
silicon
etching
silicon nitride
solution
etching process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2241870A
Other languages
German (de)
English (en)
Other versions
DE2241870A1 (de
DE2241870B2 (de
Inventor
Peter Theodore New Providence N.J. Panousis
Herbert Atkin Allentown Pa. Waggener
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2241870A1 publication Critical patent/DE2241870A1/de
Publication of DE2241870B2 publication Critical patent/DE2241870B2/de
Application granted granted Critical
Publication of DE2241870C3 publication Critical patent/DE2241870C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
DE2241870A 1971-09-03 1972-08-25 Siliziumnitrid-Ätzverfahren Expired DE2241870C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17784071A 1971-09-03 1971-09-03

Publications (3)

Publication Number Publication Date
DE2241870A1 DE2241870A1 (de) 1973-03-22
DE2241870B2 DE2241870B2 (de) 1976-03-11
DE2241870C3 true DE2241870C3 (de) 1978-04-20

Family

ID=22650170

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2241870A Expired DE2241870C3 (de) 1971-09-03 1972-08-25 Siliziumnitrid-Ätzverfahren

Country Status (12)

Country Link
US (1) US3715249A (enExample)
JP (1) JPS5141550B2 (enExample)
KR (1) KR780000506B1 (enExample)
BE (1) BE788159A (enExample)
CA (1) CA958313A (enExample)
DE (1) DE2241870C3 (enExample)
FR (1) FR2151104B1 (enExample)
GB (1) GB1392758A (enExample)
HK (1) HK35876A (enExample)
IT (1) IT962297B (enExample)
NL (1) NL154059B (enExample)
SE (1) SE375118B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425684A1 (de) * 1974-05-28 1975-12-11 Ibm Deutschland Verfahren zum aetzen von silicium enthaltenden materialien
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
US5215930A (en) * 1991-10-23 1993-06-01 At&T Bell Laboratories Integrated circuit etching of silicon nitride and polysilicon using phosphoric acid
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
US5607543A (en) * 1995-04-28 1997-03-04 Lucent Technologies Inc. Integrated circuit etching
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
EP1704586A1 (en) * 2003-12-30 2006-09-27 Akrion Llc System and method for selective etching of silicon nitride during substrate processing
JP3882932B2 (ja) 2004-04-08 2007-02-21 信越化学工業株式会社 ジルコニウム含有酸化物
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備

Also Published As

Publication number Publication date
NL7211625A (enExample) 1973-03-06
FR2151104A1 (enExample) 1973-04-13
DE2241870A1 (de) 1973-03-22
JPS4834675A (enExample) 1973-05-21
CA958313A (en) 1974-11-26
IT962297B (it) 1973-12-20
DE2241870B2 (de) 1976-03-11
JPS5141550B2 (enExample) 1976-11-10
KR780000506B1 (en) 1978-10-25
HK35876A (en) 1976-06-18
BE788159A (fr) 1972-12-18
US3715249A (en) 1973-02-06
GB1392758A (en) 1975-04-30
SE375118B (enExample) 1975-04-07
FR2151104B1 (enExample) 1974-08-19
NL154059B (nl) 1977-07-15

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee