JPS4834675A - - Google Patents

Info

Publication number
JPS4834675A
JPS4834675A JP47084700A JP8470072A JPS4834675A JP S4834675 A JPS4834675 A JP S4834675A JP 47084700 A JP47084700 A JP 47084700A JP 8470072 A JP8470072 A JP 8470072A JP S4834675 A JPS4834675 A JP S4834675A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47084700A
Other languages
Japanese (ja)
Other versions
JPS5141550B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4834675A publication Critical patent/JPS4834675A/ja
Publication of JPS5141550B2 publication Critical patent/JPS5141550B2/ja
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/114Nitrides of silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
JP47084700A 1971-09-03 1972-08-25 Expired JPS5141550B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17784071A 1971-09-03 1971-09-03

Publications (2)

Publication Number Publication Date
JPS4834675A true JPS4834675A (enExample) 1973-05-21
JPS5141550B2 JPS5141550B2 (enExample) 1976-11-10

Family

ID=22650170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47084700A Expired JPS5141550B2 (enExample) 1971-09-03 1972-08-25

Country Status (12)

Country Link
US (1) US3715249A (enExample)
JP (1) JPS5141550B2 (enExample)
KR (1) KR780000506B1 (enExample)
BE (1) BE788159A (enExample)
CA (1) CA958313A (enExample)
DE (1) DE2241870C3 (enExample)
FR (1) FR2151104B1 (enExample)
GB (1) GB1392758A (enExample)
HK (1) HK35876A (enExample)
IT (1) IT962297B (enExample)
NL (1) NL154059B (enExample)
SE (1) SE375118B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7390436B2 (en) 2004-04-08 2008-06-24 Shin-Etsu Chemical Co., Ltd Zirconium or hafnium-containing oxides

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425684A1 (de) * 1974-05-28 1975-12-11 Ibm Deutschland Verfahren zum aetzen von silicium enthaltenden materialien
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
US5215930A (en) * 1991-10-23 1993-06-01 At&T Bell Laboratories Integrated circuit etching of silicon nitride and polysilicon using phosphoric acid
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
US5607543A (en) * 1995-04-28 1997-03-04 Lucent Technologies Inc. Integrated circuit etching
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
EP1704586A1 (en) * 2003-12-30 2006-09-27 Akrion Llc System and method for selective etching of silicon nitride during substrate processing
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7390436B2 (en) 2004-04-08 2008-06-24 Shin-Etsu Chemical Co., Ltd Zirconium or hafnium-containing oxides

Also Published As

Publication number Publication date
NL7211625A (enExample) 1973-03-06
DE2241870C3 (de) 1978-04-20
FR2151104A1 (enExample) 1973-04-13
DE2241870A1 (de) 1973-03-22
CA958313A (en) 1974-11-26
IT962297B (it) 1973-12-20
DE2241870B2 (de) 1976-03-11
JPS5141550B2 (enExample) 1976-11-10
KR780000506B1 (en) 1978-10-25
HK35876A (en) 1976-06-18
BE788159A (fr) 1972-12-18
US3715249A (en) 1973-02-06
GB1392758A (en) 1975-04-30
SE375118B (enExample) 1975-04-07
FR2151104B1 (enExample) 1974-08-19
NL154059B (nl) 1977-07-15

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