KR780000506B1 - Etching method of si3 n4 layer - Google Patents

Etching method of si3 n4 layer

Info

Publication number
KR780000506B1
KR780000506B1 KR7201303A KR720001303A KR780000506B1 KR 780000506 B1 KR780000506 B1 KR 780000506B1 KR 7201303 A KR7201303 A KR 7201303A KR 720001303 A KR720001303 A KR 720001303A KR 780000506 B1 KR780000506 B1 KR 780000506B1
Authority
KR
South Korea
Prior art keywords
layer
etching method
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR7201303A
Other languages
English (en)
Korean (ko)
Inventor
Theoder Pauousis Peter
Atkin Waggener Herbert
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of KR780000506B1 publication Critical patent/KR780000506B1/ko
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
KR7201303A 1971-09-03 1972-08-29 Etching method of si3 n4 layer Expired KR780000506B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17784071A 1971-09-03 1971-09-03

Publications (1)

Publication Number Publication Date
KR780000506B1 true KR780000506B1 (en) 1978-10-25

Family

ID=22650170

Family Applications (1)

Application Number Title Priority Date Filing Date
KR7201303A Expired KR780000506B1 (en) 1971-09-03 1972-08-29 Etching method of si3 n4 layer

Country Status (12)

Country Link
US (1) US3715249A (enExample)
JP (1) JPS5141550B2 (enExample)
KR (1) KR780000506B1 (enExample)
BE (1) BE788159A (enExample)
CA (1) CA958313A (enExample)
DE (1) DE2241870C3 (enExample)
FR (1) FR2151104B1 (enExample)
GB (1) GB1392758A (enExample)
HK (1) HK35876A (enExample)
IT (1) IT962297B (enExample)
NL (1) NL154059B (enExample)
SE (1) SE375118B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425684A1 (de) * 1974-05-28 1975-12-11 Ibm Deutschland Verfahren zum aetzen von silicium enthaltenden materialien
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
US5215930A (en) * 1991-10-23 1993-06-01 At&T Bell Laboratories Integrated circuit etching of silicon nitride and polysilicon using phosphoric acid
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
US5607543A (en) * 1995-04-28 1997-03-04 Lucent Technologies Inc. Integrated circuit etching
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
EP1704586A1 (en) * 2003-12-30 2006-09-27 Akrion Llc System and method for selective etching of silicon nitride during substrate processing
JP3882932B2 (ja) 2004-04-08 2007-02-21 信越化学工業株式会社 ジルコニウム含有酸化物
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備

Also Published As

Publication number Publication date
NL7211625A (enExample) 1973-03-06
DE2241870C3 (de) 1978-04-20
FR2151104A1 (enExample) 1973-04-13
DE2241870A1 (de) 1973-03-22
JPS4834675A (enExample) 1973-05-21
CA958313A (en) 1974-11-26
IT962297B (it) 1973-12-20
DE2241870B2 (de) 1976-03-11
JPS5141550B2 (enExample) 1976-11-10
HK35876A (en) 1976-06-18
BE788159A (fr) 1972-12-18
US3715249A (en) 1973-02-06
GB1392758A (en) 1975-04-30
SE375118B (enExample) 1975-04-07
FR2151104B1 (enExample) 1974-08-19
NL154059B (nl) 1977-07-15

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