GB1392758A - Process for etching silicon nitride - Google Patents

Process for etching silicon nitride

Info

Publication number
GB1392758A
GB1392758A GB4037972A GB4037972A GB1392758A GB 1392758 A GB1392758 A GB 1392758A GB 4037972 A GB4037972 A GB 4037972A GB 4037972 A GB4037972 A GB 4037972A GB 1392758 A GB1392758 A GB 1392758A
Authority
GB
United Kingdom
Prior art keywords
silicon nitride
etching silicon
silicon
etching
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4037972A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1392758A publication Critical patent/GB1392758A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
GB4037972A 1971-09-03 1972-08-31 Process for etching silicon nitride Expired GB1392758A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17784071A 1971-09-03 1971-09-03

Publications (1)

Publication Number Publication Date
GB1392758A true GB1392758A (en) 1975-04-30

Family

ID=22650170

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4037972A Expired GB1392758A (en) 1971-09-03 1972-08-31 Process for etching silicon nitride

Country Status (12)

Country Link
US (1) US3715249A (enExample)
JP (1) JPS5141550B2 (enExample)
KR (1) KR780000506B1 (enExample)
BE (1) BE788159A (enExample)
CA (1) CA958313A (enExample)
DE (1) DE2241870C3 (enExample)
FR (1) FR2151104B1 (enExample)
GB (1) GB1392758A (enExample)
HK (1) HK35876A (enExample)
IT (1) IT962297B (enExample)
NL (1) NL154059B (enExample)
SE (1) SE375118B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425684A1 (de) * 1974-05-28 1975-12-11 Ibm Deutschland Verfahren zum aetzen von silicium enthaltenden materialien
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
US5215930A (en) * 1991-10-23 1993-06-01 At&T Bell Laboratories Integrated circuit etching of silicon nitride and polysilicon using phosphoric acid
KR970008354B1 (ko) * 1994-01-12 1997-05-23 엘지반도체 주식회사 선택적 식각방법
US5607543A (en) * 1995-04-28 1997-03-04 Lucent Technologies Inc. Integrated circuit etching
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
EP1704586A1 (en) * 2003-12-30 2006-09-27 Akrion Llc System and method for selective etching of silicon nitride during substrate processing
JP3882932B2 (ja) 2004-04-08 2007-02-21 信越化学工業株式会社 ジルコニウム含有酸化物
JP4799332B2 (ja) * 2006-09-12 2011-10-26 株式会社東芝 エッチング液、エッチング方法および電子部品の製造方法
TWI629720B (zh) 2015-09-30 2018-07-11 Tokyo Electron Limited 用於濕蝕刻製程之溫度的動態控制之方法及設備

Also Published As

Publication number Publication date
NL7211625A (enExample) 1973-03-06
DE2241870C3 (de) 1978-04-20
FR2151104A1 (enExample) 1973-04-13
DE2241870A1 (de) 1973-03-22
JPS4834675A (enExample) 1973-05-21
CA958313A (en) 1974-11-26
IT962297B (it) 1973-12-20
DE2241870B2 (de) 1976-03-11
JPS5141550B2 (enExample) 1976-11-10
KR780000506B1 (en) 1978-10-25
HK35876A (en) 1976-06-18
BE788159A (fr) 1972-12-18
US3715249A (en) 1973-02-06
SE375118B (enExample) 1975-04-07
FR2151104B1 (enExample) 1974-08-19
NL154059B (nl) 1977-07-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee