DE2231356A1 - Verfahren zur herstellung eines halbleiterbauelementes - Google Patents

Verfahren zur herstellung eines halbleiterbauelementes

Info

Publication number
DE2231356A1
DE2231356A1 DE2231356A DE2231356A DE2231356A1 DE 2231356 A1 DE2231356 A1 DE 2231356A1 DE 2231356 A DE2231356 A DE 2231356A DE 2231356 A DE2231356 A DE 2231356A DE 2231356 A1 DE2231356 A1 DE 2231356A1
Authority
DE
Germany
Prior art keywords
semiconductor
mask
ion implantation
area
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2231356A
Other languages
German (de)
English (en)
Inventor
James Godfrey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2231356A1 publication Critical patent/DE2231356A1/de
Pending legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/023—Deep level dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special

Landscapes

  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE2231356A 1971-07-01 1972-06-27 Verfahren zur herstellung eines halbleiterbauelementes Pending DE2231356A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15878971A 1971-07-01 1971-07-01

Publications (1)

Publication Number Publication Date
DE2231356A1 true DE2231356A1 (de) 1973-01-18

Family

ID=22569719

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2231356A Pending DE2231356A1 (de) 1971-07-01 1972-06-27 Verfahren zur herstellung eines halbleiterbauelementes

Country Status (8)

Country Link
US (1) US3737346A (enExample)
BE (1) BE785660A (enExample)
CA (1) CA944870A (enExample)
DE (1) DE2231356A1 (enExample)
FR (1) FR2143959B1 (enExample)
GB (1) GB1390853A (enExample)
IT (1) IT958650B (enExample)
NL (1) NL7209190A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2222736A1 (de) * 1972-05-09 1973-11-22 Siemens Ag Verfahren zur ionenimplantation
US4013502A (en) * 1973-06-18 1977-03-22 Texas Instruments Incorporated Stencil process for high resolution pattern replication
US3950187A (en) * 1974-11-15 1976-04-13 Simulation Physics, Inc. Method and apparatus involving pulsed electron beam processing of semiconductor devices
KR100679610B1 (ko) * 2006-01-16 2007-02-06 삼성전자주식회사 단결정 구조를 갖는 박막의 형성 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3193418A (en) * 1960-10-27 1965-07-06 Fairchild Camera Instr Co Semiconductor device fabrication
US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3615875A (en) * 1968-09-30 1971-10-26 Hitachi Ltd Method for fabricating semiconductor devices by ion implantation
US3571918A (en) * 1969-03-28 1971-03-23 Texas Instruments Inc Integrated circuits and fabrication thereof

Also Published As

Publication number Publication date
NL7209190A (enExample) 1973-01-03
FR2143959A1 (enExample) 1973-02-09
GB1390853A (en) 1975-04-16
FR2143959B1 (enExample) 1978-06-02
CA944870A (en) 1974-04-02
US3737346A (en) 1973-06-05
BE785660A (fr) 1972-10-16
IT958650B (it) 1973-10-30

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Legal Events

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