CA944870A - Semiconductor device fabrication using combination of energy beams for masking and impurity doping - Google Patents

Semiconductor device fabrication using combination of energy beams for masking and impurity doping

Info

Publication number
CA944870A
CA944870A CA133,302A CA133302A CA944870A CA 944870 A CA944870 A CA 944870A CA 133302 A CA133302 A CA 133302A CA 944870 A CA944870 A CA 944870A
Authority
CA
Canada
Prior art keywords
masking
combination
semiconductor device
device fabrication
impurity doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA133,302A
Other languages
English (en)
Other versions
CA133302S (en
Inventor
James Godfrey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA944870A publication Critical patent/CA944870A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/023—Deep level dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
CA133,302A 1971-07-01 1972-01-27 Semiconductor device fabrication using combination of energy beams for masking and impurity doping Expired CA944870A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15878971A 1971-07-01 1971-07-01

Publications (1)

Publication Number Publication Date
CA944870A true CA944870A (en) 1974-04-02

Family

ID=22569719

Family Applications (1)

Application Number Title Priority Date Filing Date
CA133,302A Expired CA944870A (en) 1971-07-01 1972-01-27 Semiconductor device fabrication using combination of energy beams for masking and impurity doping

Country Status (8)

Country Link
US (1) US3737346A (enExample)
BE (1) BE785660A (enExample)
CA (1) CA944870A (enExample)
DE (1) DE2231356A1 (enExample)
FR (1) FR2143959B1 (enExample)
GB (1) GB1390853A (enExample)
IT (1) IT958650B (enExample)
NL (1) NL7209190A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2222736A1 (de) * 1972-05-09 1973-11-22 Siemens Ag Verfahren zur ionenimplantation
US4013502A (en) * 1973-06-18 1977-03-22 Texas Instruments Incorporated Stencil process for high resolution pattern replication
US3950187A (en) * 1974-11-15 1976-04-13 Simulation Physics, Inc. Method and apparatus involving pulsed electron beam processing of semiconductor devices
KR100679610B1 (ko) * 2006-01-16 2007-02-06 삼성전자주식회사 단결정 구조를 갖는 박막의 형성 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3193418A (en) * 1960-10-27 1965-07-06 Fairchild Camera Instr Co Semiconductor device fabrication
US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3615875A (en) * 1968-09-30 1971-10-26 Hitachi Ltd Method for fabricating semiconductor devices by ion implantation
US3571918A (en) * 1969-03-28 1971-03-23 Texas Instruments Inc Integrated circuits and fabrication thereof

Also Published As

Publication number Publication date
NL7209190A (enExample) 1973-01-03
FR2143959A1 (enExample) 1973-02-09
DE2231356A1 (de) 1973-01-18
GB1390853A (en) 1975-04-16
FR2143959B1 (enExample) 1978-06-02
US3737346A (en) 1973-06-05
BE785660A (fr) 1972-10-16
IT958650B (it) 1973-10-30

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