DE2152109C3 - Speichermatrix mit einem Feldeffekt-Halbleiterbauelement je Speicherplatz - Google Patents
Speichermatrix mit einem Feldeffekt-Halbleiterbauelement je SpeicherplatzInfo
- Publication number
- DE2152109C3 DE2152109C3 DE2152109A DE2152109A DE2152109C3 DE 2152109 C3 DE2152109 C3 DE 2152109C3 DE 2152109 A DE2152109 A DE 2152109A DE 2152109 A DE2152109 A DE 2152109A DE 2152109 C3 DE2152109 C3 DE 2152109C3
- Authority
- DE
- Germany
- Prior art keywords
- potential
- transistor
- memory
- bit line
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000011159 matrix material Substances 0.000 title claims description 11
- 230000005669 field effect Effects 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 25
- 238000010276 construction Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 235000013929 Psidium pyriferum Nutrition 0.000 description 1
- 244000236580 Psidium pyriferum Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 239000010871 livestock manure Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8171370A | 1970-10-19 | 1970-10-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2152109A1 DE2152109A1 (de) | 1972-04-20 |
| DE2152109B2 DE2152109B2 (de) | 1974-11-28 |
| DE2152109C3 true DE2152109C3 (de) | 1975-07-17 |
Family
ID=22165910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2152109A Expired DE2152109C3 (de) | 1970-10-19 | 1971-10-19 | Speichermatrix mit einem Feldeffekt-Halbleiterbauelement je Speicherplatz |
Country Status (9)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3882469A (en) * | 1971-11-30 | 1975-05-06 | Texas Instruments Inc | Non-volatile variable threshold memory cell |
| US3851317A (en) * | 1973-05-04 | 1974-11-26 | Ibm | Double density non-volatile memory array |
| DE2403599B1 (de) * | 1974-01-25 | 1975-02-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Kennungsgeber für Fern- oder Datenschreiber |
| US4091360A (en) * | 1976-09-01 | 1978-05-23 | Bell Telephone Laboratories, Incorporated | Dynamic precharge circuitry |
| DE2843115A1 (de) * | 1978-10-03 | 1980-04-17 | Plessey Handel Investment Ag | Betriebsverfahren fuer eine transistor- speichermatrix |
| US4291391A (en) * | 1979-09-14 | 1981-09-22 | Texas Instruments Incorporated | Taper isolated random access memory array and method of operating |
| US4866432A (en) * | 1986-04-25 | 1989-09-12 | Exel Microelectronics, Inc. | Field programmable matrix circuit for EEPROM logic cells |
| US5039882A (en) * | 1988-10-15 | 1991-08-13 | Sony Corporation | Address decoder circuit for non-volatile memory |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1499444A (fr) * | 1966-09-16 | 1967-10-27 | Constr Telephoniques | Matrice de circuits logiques intégrés |
| US3529299A (en) * | 1966-10-21 | 1970-09-15 | Texas Instruments Inc | Programmable high-speed read-only memory devices |
| US3508211A (en) * | 1967-06-23 | 1970-04-21 | Sperry Rand Corp | Electrically alterable non-destructive readout field effect transistor memory |
| US3582908A (en) * | 1969-03-10 | 1971-06-01 | Bell Telephone Labor Inc | Writing a read-only memory while protecting nonselected elements |
| US3579204A (en) * | 1969-03-24 | 1971-05-18 | Sperry Rand Corp | Variable conduction threshold transistor memory circuit insensitive to threshold deviations |
| JPS4844585B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-04-12 | 1973-12-25 | ||
| US3649848A (en) * | 1970-12-03 | 1972-03-14 | Rca Corp | Voltage translation circuit for mnos memory array |
-
1970
- 1970-10-19 US US00081713A patent/US3720925A/en not_active Expired - Lifetime
-
1971
- 1971-09-01 CA CA121,938A patent/CA961159A/en not_active Expired
- 1971-10-15 GB GB4800071A patent/GB1363509A/en not_active Expired
- 1971-10-18 NL NLAANVRAGE7114285,A patent/NL182922C/xx not_active IP Right Cessation
- 1971-10-18 SE SE7113161A patent/SE379444B/xx unknown
- 1971-10-18 JP JP46082374A patent/JPS523701B1/ja active Pending
- 1971-10-18 BE BE774112A patent/BE774112A/xx unknown
- 1971-10-19 DE DE2152109A patent/DE2152109C3/de not_active Expired
- 1971-10-19 FR FR7137537A patent/FR2111709B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1363509A (en) | 1974-08-14 |
| DE2152109B2 (de) | 1974-11-28 |
| US3720925A (en) | 1973-03-13 |
| FR2111709B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1977-08-05 |
| FR2111709A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-06-09 |
| SE379444B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-10-06 |
| NL182922C (nl) | 1988-06-01 |
| DE2152109A1 (de) | 1972-04-20 |
| NL7114285A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-04-21 |
| JPS523701B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1977-01-29 |
| NL182922B (nl) | 1988-01-04 |
| AU3466571A (en) | 1973-04-19 |
| CA961159A (en) | 1975-01-14 |
| BE774112A (fr) | 1972-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8339 | Ceased/non-payment of the annual fee |