DE2128934C3 - Halbleiteranordnung und Verfahren zu ihrer Herstellung - Google Patents

Halbleiteranordnung und Verfahren zu ihrer Herstellung

Info

Publication number
DE2128934C3
DE2128934C3 DE2128934A DE2128934A DE2128934C3 DE 2128934 C3 DE2128934 C3 DE 2128934C3 DE 2128934 A DE2128934 A DE 2128934A DE 2128934 A DE2128934 A DE 2128934A DE 2128934 C3 DE2128934 C3 DE 2128934C3
Authority
DE
Germany
Prior art keywords
zone
transistor
semiconductor
area
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2128934A
Other languages
German (de)
English (en)
Other versions
DE2128934A1 (de
DE2128934B2 (de
Inventor
Claude Jan Principe Frederic Le Can
Walter Steinmaier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2128934A1 publication Critical patent/DE2128934A1/de
Publication of DE2128934B2 publication Critical patent/DE2128934B2/de
Application granted granted Critical
Publication of DE2128934C3 publication Critical patent/DE2128934C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/086—Emitter coupled logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE2128934A 1970-06-20 1971-06-11 Halbleiteranordnung und Verfahren zu ihrer Herstellung Expired DE2128934C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7009090A NL7009090A (enExample) 1970-06-20 1970-06-20
NL7009089A NL7009089A (enExample) 1970-06-20 1970-06-20

Publications (3)

Publication Number Publication Date
DE2128934A1 DE2128934A1 (de) 1971-12-30
DE2128934B2 DE2128934B2 (de) 1979-06-13
DE2128934C3 true DE2128934C3 (de) 1980-02-14

Family

ID=26644553

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2128934A Expired DE2128934C3 (de) 1970-06-20 1971-06-11 Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE19712128920 Pending DE2128920A1 (de) 1970-06-20 1971-06-11 Elektronischer Schalter für logische Schaltungen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19712128920 Pending DE2128920A1 (de) 1970-06-20 1971-06-11 Elektronischer Schalter für logische Schaltungen

Country Status (7)

Country Link
BE (2) BE768762A (enExample)
CA (1) CA965518A (enExample)
CH (1) CH531258A (enExample)
DE (2) DE2128934C3 (enExample)
FR (2) FR2095386B1 (enExample)
GB (2) GB1349101A (enExample)
NL (2) NL7009089A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559323B1 (fr) * 1984-02-08 1986-06-20 Labo Electronique Physique Circuit logique elementaire realise a l'aide de transistors a effet de champ en arseniure de gallium et compatible avec la technologie ecl 100 k
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
FR3099849B1 (fr) * 2019-08-09 2021-08-27 St Microelectronics Tours Sas Dispositif de protection

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1539042A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Procédé de fabrication de transistors dans un circuit intégré
FR1539043A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Circuit intégré comportant un transistor et son procédé de fabrication

Also Published As

Publication number Publication date
FR2095386A1 (enExample) 1972-02-11
NL7009090A (enExample) 1971-12-22
FR2099227A5 (enExample) 1972-03-10
CH531258A (de) 1972-11-30
GB1354527A (en) 1974-06-05
NL7009089A (enExample) 1971-12-22
BE768761A (fr) 1971-12-20
DE2128934A1 (de) 1971-12-30
FR2095386B1 (enExample) 1977-04-22
DE2128934B2 (de) 1979-06-13
BE768762A (fr) 1971-12-20
DE2128920A1 (de) 1971-12-30
CA965518A (en) 1975-04-01
GB1349101A (en) 1974-03-27

Similar Documents

Publication Publication Date Title
DE1944793C3 (de) Verfahren zur Herstellung einer integrierten Halbleiteranordnung
EP0001586B1 (de) Integrierte Halbleiteranordnung mit vertikalen NPN- und PNP-Strukturen und Verfahren zur Herstellung
DE3334337A1 (de) Verfahren zur herstellung einer integrierten halbleitereinrichtung
DE2718779A1 (de) Mis-halbleiter-bauelement und verfahren zu dessen herstellung
DE2749607C3 (de) Halbleiteranordnung und Verfahren zu deren Herstellung
DE3030385A1 (de) Mos-halbleitervorrichtung und verfahren zur herstellung derselben
DE2338239A1 (de) Integrierte halbleiterschaltung
CH655202A5 (de) Verfahren zur herstellung einer halbleiteranordnung.
DE2361319C2 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE2133976C3 (de) Monolithisch integrierte Halbleiteranordnung
DE2850864A1 (de) Halbleiteranordnung mit einem festwertspeicher und verfahren zur herstellung einer derartigen halbleiteranordnung
DE1514855B2 (de) Halbleitervorrichtung
DE2218680C2 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE69026675T2 (de) MIS-Kapazitätselement
DE2155816A1 (de) Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einem Feldeffekttransistor mit isolierter Torelektrode, und durch dieses Verfahren hergestellte Halbleiteranordnung
DE2318179C2 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE3688516T2 (de) Herstellungsverfahren für einem bipolaren Transistor mit Heteroübergang.
DE2128934C3 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE2525529B2 (de) Halbleiteranordnung mit komplementaeren transistorstrukturen und verfahren zu ihrer herstellung
DE2800363C2 (de) Halbleiteranordnung und Verfahren zu deren Herstellung
DE3235467A1 (de) Halbleiteranordnung und verfahren zu deren herstellung
DE68928763T2 (de) Verfahren zur Herstellung von isolierten vertikalbipolaren und JFET-Transistoren und entsprechender IC
DE2128868C3 (de) Halbleiteranordnung
DE2133977C3 (de) Halbleiterbauelement
DE3142618C2 (de) Halbleiteranordnung mit Transistor und Widerstandszone

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee