GB1349101A - Electronic switch - Google Patents

Electronic switch

Info

Publication number
GB1349101A
GB1349101A GB2844271A GB2844271A GB1349101A GB 1349101 A GB1349101 A GB 1349101A GB 2844271 A GB2844271 A GB 2844271A GB 2844271 A GB2844271 A GB 2844271A GB 1349101 A GB1349101 A GB 1349101A
Authority
GB
United Kingdom
Prior art keywords
collector
transistors
emitter
load
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2844271A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1349101A publication Critical patent/GB1349101A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/086—Emitter coupled logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB2844271A 1970-06-20 1971-06-17 Electronic switch Expired GB1349101A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7009090A NL7009090A (enExample) 1970-06-20 1970-06-20
NL7009089A NL7009089A (enExample) 1970-06-20 1970-06-20

Publications (1)

Publication Number Publication Date
GB1349101A true GB1349101A (en) 1974-03-27

Family

ID=26644553

Family Applications (2)

Application Number Title Priority Date Filing Date
GB2844271A Expired GB1349101A (en) 1970-06-20 1971-06-17 Electronic switch
GB2844171A Expired GB1354527A (en) 1970-06-20 1971-06-17 Semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB2844171A Expired GB1354527A (en) 1970-06-20 1971-06-17 Semiconductor devices

Country Status (7)

Country Link
BE (2) BE768761A (enExample)
CA (1) CA965518A (enExample)
CH (1) CH531258A (enExample)
DE (2) DE2128920A1 (enExample)
FR (2) FR2095386B1 (enExample)
GB (2) GB1349101A (enExample)
NL (2) NL7009090A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112349776A (zh) * 2019-08-09 2021-02-09 意法半导体(图尔)公司 保护装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559323B1 (fr) * 1984-02-08 1986-06-20 Labo Electronique Physique Circuit logique elementaire realise a l'aide de transistors a effet de champ en arseniure de gallium et compatible avec la technologie ecl 100 k
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1539043A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Circuit intégré comportant un transistor et son procédé de fabrication
FR1539042A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Procédé de fabrication de transistors dans un circuit intégré

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112349776A (zh) * 2019-08-09 2021-02-09 意法半导体(图尔)公司 保护装置

Also Published As

Publication number Publication date
DE2128934B2 (de) 1979-06-13
FR2095386A1 (enExample) 1972-02-11
BE768761A (fr) 1971-12-20
GB1354527A (en) 1974-06-05
DE2128920A1 (de) 1971-12-30
CA965518A (en) 1975-04-01
NL7009090A (enExample) 1971-12-22
CH531258A (de) 1972-11-30
FR2095386B1 (enExample) 1977-04-22
BE768762A (fr) 1971-12-20
DE2128934A1 (de) 1971-12-30
DE2128934C3 (de) 1980-02-14
NL7009089A (enExample) 1971-12-22
FR2099227A5 (enExample) 1972-03-10

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed