DE2128920A1 - Elektronischer Schalter für logische Schaltungen - Google Patents

Elektronischer Schalter für logische Schaltungen

Info

Publication number
DE2128920A1
DE2128920A1 DE19712128920 DE2128920A DE2128920A1 DE 2128920 A1 DE2128920 A1 DE 2128920A1 DE 19712128920 DE19712128920 DE 19712128920 DE 2128920 A DE2128920 A DE 2128920A DE 2128920 A1 DE2128920 A1 DE 2128920A1
Authority
DE
Germany
Prior art keywords
transistor
collector
base
circuit
electronic switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712128920
Other languages
German (de)
English (en)
Inventor
Claude Jan Principe Frederic Ie; Hülst Roelof Wilhelm Petrus van der; Nijmegen Can (Niederlande)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2128920A1 publication Critical patent/DE2128920A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/086—Emitter coupled logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19712128920 1970-06-20 1971-06-11 Elektronischer Schalter für logische Schaltungen Pending DE2128920A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7009090A NL7009090A (enExample) 1970-06-20 1970-06-20
NL7009089A NL7009089A (enExample) 1970-06-20 1970-06-20

Publications (1)

Publication Number Publication Date
DE2128920A1 true DE2128920A1 (de) 1971-12-30

Family

ID=26644553

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19712128920 Pending DE2128920A1 (de) 1970-06-20 1971-06-11 Elektronischer Schalter für logische Schaltungen
DE2128934A Expired DE2128934C3 (de) 1970-06-20 1971-06-11 Halbleiteranordnung und Verfahren zu ihrer Herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE2128934A Expired DE2128934C3 (de) 1970-06-20 1971-06-11 Halbleiteranordnung und Verfahren zu ihrer Herstellung

Country Status (7)

Country Link
BE (2) BE768761A (enExample)
CA (1) CA965518A (enExample)
CH (1) CH531258A (enExample)
DE (2) DE2128920A1 (enExample)
FR (2) FR2095386B1 (enExample)
GB (2) GB1349101A (enExample)
NL (2) NL7009090A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559323B1 (fr) * 1984-02-08 1986-06-20 Labo Electronique Physique Circuit logique elementaire realise a l'aide de transistors a effet de champ en arseniure de gallium et compatible avec la technologie ecl 100 k
IT1218230B (it) * 1988-04-28 1990-04-12 Sgs Thomson Microelectronics Procedimento per la formazione di un circuito integrato su un substrato di tipo n,comprendente transistori pnp e npn verticali e isolati fra loro
FR3099849B1 (fr) * 2019-08-09 2021-08-27 St Microelectronics Tours Sas Dispositif de protection

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1539043A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Circuit intégré comportant un transistor et son procédé de fabrication
FR1539042A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Procédé de fabrication de transistors dans un circuit intégré

Also Published As

Publication number Publication date
DE2128934B2 (de) 1979-06-13
FR2095386A1 (enExample) 1972-02-11
BE768761A (fr) 1971-12-20
GB1354527A (en) 1974-06-05
CA965518A (en) 1975-04-01
NL7009090A (enExample) 1971-12-22
CH531258A (de) 1972-11-30
FR2095386B1 (enExample) 1977-04-22
BE768762A (fr) 1971-12-20
DE2128934A1 (de) 1971-12-30
DE2128934C3 (de) 1980-02-14
NL7009089A (enExample) 1971-12-22
FR2099227A5 (enExample) 1972-03-10
GB1349101A (en) 1974-03-27

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