FR2095386A1 - - Google Patents

Info

Publication number
FR2095386A1
FR2095386A1 FR7122281A FR7122281A FR2095386A1 FR 2095386 A1 FR2095386 A1 FR 2095386A1 FR 7122281 A FR7122281 A FR 7122281A FR 7122281 A FR7122281 A FR 7122281A FR 2095386 A1 FR2095386 A1 FR 2095386A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7122281A
Other languages
French (fr)
Other versions
FR2095386B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2095386A1 publication Critical patent/FR2095386A1/fr
Application granted granted Critical
Publication of FR2095386B1 publication Critical patent/FR2095386B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/086—Emitter coupled logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
FR7122281A 1970-06-20 1971-06-18 Expired FR2095386B1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7009090A NL7009090A (enExample) 1970-06-20 1970-06-20
NL7009089A NL7009089A (enExample) 1970-06-20 1970-06-20

Publications (2)

Publication Number Publication Date
FR2095386A1 true FR2095386A1 (enExample) 1972-02-11
FR2095386B1 FR2095386B1 (enExample) 1977-04-22

Family

ID=26644553

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7122281A Expired FR2095386B1 (enExample) 1970-06-20 1971-06-18
FR7122282A Expired FR2099227A5 (enExample) 1970-06-20 1971-06-18

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR7122282A Expired FR2099227A5 (enExample) 1970-06-20 1971-06-18

Country Status (7)

Country Link
BE (2) BE768762A (enExample)
CA (1) CA965518A (enExample)
CH (1) CH531258A (enExample)
DE (2) DE2128934C3 (enExample)
FR (2) FR2095386B1 (enExample)
GB (2) GB1349101A (enExample)
NL (2) NL7009089A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339732A1 (en) * 1988-04-28 1989-11-02 STMicroelectronics S.r.l. Process for forming an integrated circuit on an N type substrate comprising PNP and NPN transistors placed vertically and insulated one from another

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2559323B1 (fr) * 1984-02-08 1986-06-20 Labo Electronique Physique Circuit logique elementaire realise a l'aide de transistors a effet de champ en arseniure de gallium et compatible avec la technologie ecl 100 k
FR3099849B1 (fr) * 2019-08-09 2021-08-27 St Microelectronics Tours Sas Dispositif de protection

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1539043A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Circuit intégré comportant un transistor et son procédé de fabrication
FR1539042A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Procédé de fabrication de transistors dans un circuit intégré

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1539043A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Circuit intégré comportant un transistor et son procédé de fabrication
FR1539042A (fr) * 1967-06-30 1968-09-13 Radiotechnique Coprim Rtc Procédé de fabrication de transistors dans un circuit intégré

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN, VOL.11, AVRIL 1969, NO 11"TRANSISTOR WITH PULL-DOWN RESISTOR", W.W.WU, PAGE 1439 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339732A1 (en) * 1988-04-28 1989-11-02 STMicroelectronics S.r.l. Process for forming an integrated circuit on an N type substrate comprising PNP and NPN transistors placed vertically and insulated one from another

Also Published As

Publication number Publication date
NL7009090A (enExample) 1971-12-22
FR2099227A5 (enExample) 1972-03-10
CH531258A (de) 1972-11-30
GB1354527A (en) 1974-06-05
NL7009089A (enExample) 1971-12-22
BE768761A (fr) 1971-12-20
DE2128934A1 (de) 1971-12-30
FR2095386B1 (enExample) 1977-04-22
DE2128934B2 (de) 1979-06-13
BE768762A (fr) 1971-12-20
DE2128934C3 (de) 1980-02-14
DE2128920A1 (de) 1971-12-30
CA965518A (en) 1975-04-01
GB1349101A (en) 1974-03-27

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Legal Events

Date Code Title Description
ST Notification of lapse