DE69127359T2 - Schaltkreis zum Verbinden eines ersten Knotens mit einem zweiten oder dritten Knoten in Abhängigkeit vom Potential des letzteren, zum Steuern des Potentials eines Isolationsbereiches in einer integrierten Schaltung in Abhängigkeit der Substratspannung - Google Patents

Schaltkreis zum Verbinden eines ersten Knotens mit einem zweiten oder dritten Knoten in Abhängigkeit vom Potential des letzteren, zum Steuern des Potentials eines Isolationsbereiches in einer integrierten Schaltung in Abhängigkeit der Substratspannung

Info

Publication number
DE69127359T2
DE69127359T2 DE69127359T DE69127359T DE69127359T2 DE 69127359 T2 DE69127359 T2 DE 69127359T2 DE 69127359 T DE69127359 T DE 69127359T DE 69127359 T DE69127359 T DE 69127359T DE 69127359 T2 DE69127359 T2 DE 69127359T2
Authority
DE
Germany
Prior art keywords
potential
node
depending
circuit
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127359T
Other languages
English (en)
Other versions
DE69127359D1 (de
Inventor
Natale Aiello
Sergio Palara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69127359D1 publication Critical patent/DE69127359D1/de
Publication of DE69127359T2 publication Critical patent/DE69127359T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08146—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6242—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several inputs only and without selecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
DE69127359T 1991-06-27 1991-06-27 Schaltkreis zum Verbinden eines ersten Knotens mit einem zweiten oder dritten Knoten in Abhängigkeit vom Potential des letzteren, zum Steuern des Potentials eines Isolationsbereiches in einer integrierten Schaltung in Abhängigkeit der Substratspannung Expired - Fee Related DE69127359T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP91830287A EP0520125B1 (de) 1991-06-27 1991-06-27 Schaltkreis zum Verbinden eines ersten Knotens mit einem zweiten oder dritten Knoten in Abhängigkeit vom Potential des letzteren, zum Steuern des Potentials eines Isolationsbereiches in einer integrierten Schaltung in Abhängigkeit der Substratspannung

Publications (2)

Publication Number Publication Date
DE69127359D1 DE69127359D1 (de) 1997-09-25
DE69127359T2 true DE69127359T2 (de) 1998-03-19

Family

ID=8208961

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127359T Expired - Fee Related DE69127359T2 (de) 1991-06-27 1991-06-27 Schaltkreis zum Verbinden eines ersten Knotens mit einem zweiten oder dritten Knoten in Abhängigkeit vom Potential des letzteren, zum Steuern des Potentials eines Isolationsbereiches in einer integrierten Schaltung in Abhängigkeit der Substratspannung

Country Status (4)

Country Link
US (1) US5382837A (de)
EP (1) EP0520125B1 (de)
JP (1) JP3262841B2 (de)
DE (1) DE69127359T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5694075A (en) * 1994-12-30 1997-12-02 Maxim Integrated Products Substrate clamp for non-isolated integrated circuits
EP1028468A1 (de) * 1999-02-09 2000-08-16 STMicroelectronics S.r.l. Vorspannungsschaltung für Isolationsbereich in integriertem Leistungsschaltkreis
US6573562B2 (en) * 2001-10-31 2003-06-03 Motorola, Inc. Semiconductor component and method of operation
EP3430723A4 (de) * 2016-03-15 2019-03-06 Ideal Power Inc. Doppelbasisverbundene bipolare transistoren mit passiven komponenten zum schutz vor versehentlichem einschalten

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2148747A1 (de) * 1971-09-30 1973-04-19 Itt Ind Gmbh Deutsche Schaltungsanordnung fuer einen elektronischen schwellwertschalter
US3979606A (en) * 1975-09-05 1976-09-07 Rca Corporation Current level detector
US4086503A (en) * 1976-06-21 1978-04-25 Westinghouse Electric Corporation Control circuit initiating conduction of an opto-isolator unit
SU702519A1 (ru) * 1978-05-04 1979-12-05 Калининградское Производственно-Конструкторское Объединение "Стрела" Реле
SU764097A1 (ru) * 1978-05-24 1980-09-15 Предприятие П/Я Р-6644 Генератор напр жени смещени подложки в мдп-интегральных схемах
DE2929515C2 (de) * 1979-07-20 1981-07-30 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur unterbrechungsfreien Spannungsumschaltung
US4401897A (en) * 1981-03-17 1983-08-30 Motorola, Inc. Substrate bias voltage regulator
US4471237A (en) * 1982-08-13 1984-09-11 Rca Corporation Output protection circuit for preventing a reverse current
US4473758A (en) * 1983-02-07 1984-09-25 Motorola Inc. Substrate bias control circuit and method
US4617473A (en) * 1984-01-03 1986-10-14 Intersil, Inc. CMOS backup power switching circuit
US4665459A (en) * 1985-04-01 1987-05-12 Motorola, Inc. Method and circuit for dissipating stored inductive energy
US4771189A (en) * 1986-05-02 1988-09-13 Ford Microelectronics, Inc. FET gate current limiter circuit
FR2616602B1 (fr) * 1987-06-12 1989-10-13 Thomson Semiconducteurs Circuit de remise sous tension pour circuit integre en technologie mos
FR2636778B1 (fr) * 1988-08-31 1990-12-14 Sgs Thomson Microelectronics Transistor mos composite et application a une diode roue libre
US5208488A (en) * 1989-03-03 1993-05-04 Kabushiki Kaisha Toshiba Potential detecting circuit
FR2655196B1 (fr) * 1989-11-29 1992-04-10 Sgs Thomson Microelectronics Circuit d'isolation dynamique de circuits integres.
US5120993A (en) * 1990-02-05 1992-06-09 Texas Instruments Incorporated Substrate bias voltage detection circuit
US5187389A (en) * 1991-05-03 1993-02-16 National Semiconductor Corporation Noise resistant low voltage brownout detector with shut off option

Also Published As

Publication number Publication date
EP0520125B1 (de) 1997-08-20
US5382837A (en) 1995-01-17
JP3262841B2 (ja) 2002-03-04
DE69127359D1 (de) 1997-09-25
EP0520125A1 (de) 1992-12-30
JPH05308277A (ja) 1993-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee