ITRM910643A1 - Metodo per formare una configurazione fine su un elemento semiconduttore avente un gradino. - Google Patents

Metodo per formare una configurazione fine su un elemento semiconduttore avente un gradino.

Info

Publication number
ITRM910643A1
ITRM910643A1 IT000643A ITRM910643A ITRM910643A1 IT RM910643 A1 ITRM910643 A1 IT RM910643A1 IT 000643 A IT000643 A IT 000643A IT RM910643 A ITRM910643 A IT RM910643A IT RM910643 A1 ITRM910643 A1 IT RM910643A1
Authority
IT
Italy
Prior art keywords
semiconductive element
fine configuration
fine
configuration
semiconductive
Prior art date
Application number
IT000643A
Other languages
English (en)
Inventor
Woo-Sung Han
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITRM910643A0 publication Critical patent/ITRM910643A0/it
Publication of ITRM910643A1 publication Critical patent/ITRM910643A1/it
Application granted granted Critical
Publication of IT1250086B publication Critical patent/IT1250086B/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
ITRM910643A 1990-08-30 1991-08-29 Metodo per formare una configurazione fine su un elemento semiconduttore avente un gradino. IT1250086B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR9013523A KR930008139B1 (en) 1990-08-30 1990-08-30 Method for preparation of pattern

Publications (3)

Publication Number Publication Date
ITRM910643A0 ITRM910643A0 (it) 1991-08-29
ITRM910643A1 true ITRM910643A1 (it) 1993-03-01
IT1250086B IT1250086B (it) 1995-03-30

Family

ID=19302954

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM910643A IT1250086B (it) 1990-08-30 1991-08-29 Metodo per formare una configurazione fine su un elemento semiconduttore avente un gradino.

Country Status (7)

Country Link
US (1) US5134058A (it)
JP (1) JPH04115515A (it)
KR (1) KR930008139B1 (it)
DE (1) DE4103565A1 (it)
FR (1) FR2666449A1 (it)
GB (1) GB2247535A (it)
IT (1) IT1250086B (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5364716A (en) * 1991-09-27 1994-11-15 Fujitsu Limited Pattern exposing method using phase shift and mask used therefor
DE4240504C2 (de) * 1992-12-02 2003-04-30 Cis Inst Fuer Mikrosensorik Gg Verfahren zur Herstellung von Leitbahnstrukturen über Grabengebieten von Substraten
KR950008384B1 (ko) * 1992-12-10 1995-07-28 삼성전자주식회사 패턴의 형성방법
JP2616660B2 (ja) * 1993-06-21 1997-06-04 日本電気株式会社 厚膜配線パターンの露光装置および厚膜の成形方法
WO1994024610A1 (en) * 1993-04-13 1994-10-27 Astarix, Inc. High resolution mask programmable via selected by low resolution photomasking
KR970007173B1 (ko) * 1994-07-14 1997-05-03 현대전자산업 주식회사 미세패턴 형성방법
US5693455A (en) * 1994-09-02 1997-12-02 Motorola, Inc. Method for creating a pattern having step features in a photopolymer using a thermal mask
US6225174B1 (en) * 1996-06-13 2001-05-01 Micron Technology, Inc. Method for forming a spacer using photosensitive material
US5837426A (en) * 1996-07-29 1998-11-17 United Microelectronics Corp. Photolithographic process for mask programming of read-only memory devices
JPH10275769A (ja) 1997-03-31 1998-10-13 Nikon Corp 露光方法
JP3311302B2 (ja) 1998-10-27 2002-08-05 キヤノン株式会社 露光方法
US6466373B1 (en) 1999-10-07 2002-10-15 Siemens Aktiengesellschaft Trimming mask with semitransparent phase-shifting regions
US6656667B2 (en) * 2001-03-14 2003-12-02 United Microelectronics Corp. Multiple resist layer photolithographic process
JP4675504B2 (ja) * 2001-06-20 2011-04-27 ルネサスエレクトロニクス株式会社 マスクパターンの設計方法
KR100816340B1 (ko) * 2001-08-27 2008-03-24 삼성전자주식회사 액정 표시 장치 제조용 노광 마스크와 이를 이용한 액정표시 장치 제조에서의 기판의 노광 방법
GB2379284A (en) 2001-09-01 2003-03-05 Zarlink Semiconductor Ltd Multiple level photolithography
US7067227B2 (en) * 2002-05-23 2006-06-27 Applied Materials, Inc. Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing
DE10233209A1 (de) * 2002-07-22 2004-02-05 Infineon Technologies Ag Verfahren zum Bestrahlen eines Resists
US6903809B2 (en) * 2003-05-29 2005-06-07 Perkinelmer, Inc. Integrated, in-line bumping and exposure system
US20050130075A1 (en) * 2003-12-12 2005-06-16 Mohammed Shaarawi Method for making fluid emitter orifice
US7632625B2 (en) * 2004-05-25 2009-12-15 Roberts David H Method of pre-exposing relief image printing plate
KR100735530B1 (ko) 2006-02-02 2007-07-04 삼성전자주식회사 단차를 가진 반사층을 포함하는 반사형 포토마스크 및 그 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2534795C3 (de) * 1975-08-04 1978-05-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Strukturen aus Positiv-Fotolackschichten
US4859573A (en) * 1984-08-13 1989-08-22 Ncr Corporation Multiple photoresist layer process using selective hardening
US4931380A (en) * 1985-07-18 1990-06-05 Microsi, Inc. Pre-exposure method for increased sensitivity in high contrast resist development of positive working diazo ketone photoresist
US4869999A (en) * 1986-08-08 1989-09-26 Hitachi, Ltd. Method of forming pattern and projection aligner for carrying out the same

Also Published As

Publication number Publication date
GB2247535A (en) 1992-03-04
KR930008139B1 (en) 1993-08-26
GB9105973D0 (en) 1991-05-08
US5134058A (en) 1992-07-28
JPH04115515A (ja) 1992-04-16
FR2666449A1 (fr) 1992-03-06
ITRM910643A0 (it) 1991-08-29
IT1250086B (it) 1995-03-30
DE4103565A1 (de) 1992-03-05

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Legal Events

Date Code Title Description
0001 Granted