ITRM910643A1 - Metodo per formare una configurazione fine su un elemento semiconduttore avente un gradino. - Google Patents
Metodo per formare una configurazione fine su un elemento semiconduttore avente un gradino.Info
- Publication number
- ITRM910643A1 ITRM910643A1 IT000643A ITRM910643A ITRM910643A1 IT RM910643 A1 ITRM910643 A1 IT RM910643A1 IT 000643 A IT000643 A IT 000643A IT RM910643 A ITRM910643 A IT RM910643A IT RM910643 A1 ITRM910643 A1 IT RM910643A1
- Authority
- IT
- Italy
- Prior art keywords
- semiconductive element
- fine configuration
- fine
- configuration
- semiconductive
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR9013523A KR930008139B1 (en) | 1990-08-30 | 1990-08-30 | Method for preparation of pattern |
Publications (3)
Publication Number | Publication Date |
---|---|
ITRM910643A0 ITRM910643A0 (it) | 1991-08-29 |
ITRM910643A1 true ITRM910643A1 (it) | 1993-03-01 |
IT1250086B IT1250086B (it) | 1995-03-30 |
Family
ID=19302954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITRM910643A IT1250086B (it) | 1990-08-30 | 1991-08-29 | Metodo per formare una configurazione fine su un elemento semiconduttore avente un gradino. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5134058A (it) |
JP (1) | JPH04115515A (it) |
KR (1) | KR930008139B1 (it) |
DE (1) | DE4103565A1 (it) |
FR (1) | FR2666449A1 (it) |
GB (1) | GB2247535A (it) |
IT (1) | IT1250086B (it) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5364716A (en) * | 1991-09-27 | 1994-11-15 | Fujitsu Limited | Pattern exposing method using phase shift and mask used therefor |
DE4240504C2 (de) * | 1992-12-02 | 2003-04-30 | Cis Inst Fuer Mikrosensorik Gg | Verfahren zur Herstellung von Leitbahnstrukturen über Grabengebieten von Substraten |
KR950008384B1 (ko) * | 1992-12-10 | 1995-07-28 | 삼성전자주식회사 | 패턴의 형성방법 |
JP2616660B2 (ja) * | 1993-06-21 | 1997-06-04 | 日本電気株式会社 | 厚膜配線パターンの露光装置および厚膜の成形方法 |
WO1994024610A1 (en) * | 1993-04-13 | 1994-10-27 | Astarix, Inc. | High resolution mask programmable via selected by low resolution photomasking |
KR970007173B1 (ko) * | 1994-07-14 | 1997-05-03 | 현대전자산업 주식회사 | 미세패턴 형성방법 |
US5693455A (en) * | 1994-09-02 | 1997-12-02 | Motorola, Inc. | Method for creating a pattern having step features in a photopolymer using a thermal mask |
US6225174B1 (en) * | 1996-06-13 | 2001-05-01 | Micron Technology, Inc. | Method for forming a spacer using photosensitive material |
US5837426A (en) * | 1996-07-29 | 1998-11-17 | United Microelectronics Corp. | Photolithographic process for mask programming of read-only memory devices |
JPH10275769A (ja) | 1997-03-31 | 1998-10-13 | Nikon Corp | 露光方法 |
JP3311302B2 (ja) | 1998-10-27 | 2002-08-05 | キヤノン株式会社 | 露光方法 |
US6466373B1 (en) | 1999-10-07 | 2002-10-15 | Siemens Aktiengesellschaft | Trimming mask with semitransparent phase-shifting regions |
US6656667B2 (en) * | 2001-03-14 | 2003-12-02 | United Microelectronics Corp. | Multiple resist layer photolithographic process |
JP4675504B2 (ja) * | 2001-06-20 | 2011-04-27 | ルネサスエレクトロニクス株式会社 | マスクパターンの設計方法 |
KR100816340B1 (ko) * | 2001-08-27 | 2008-03-24 | 삼성전자주식회사 | 액정 표시 장치 제조용 노광 마스크와 이를 이용한 액정표시 장치 제조에서의 기판의 노광 방법 |
GB2379284A (en) | 2001-09-01 | 2003-03-05 | Zarlink Semiconductor Ltd | Multiple level photolithography |
US7067227B2 (en) * | 2002-05-23 | 2006-06-27 | Applied Materials, Inc. | Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing |
DE10233209A1 (de) * | 2002-07-22 | 2004-02-05 | Infineon Technologies Ag | Verfahren zum Bestrahlen eines Resists |
US6903809B2 (en) * | 2003-05-29 | 2005-06-07 | Perkinelmer, Inc. | Integrated, in-line bumping and exposure system |
US20050130075A1 (en) * | 2003-12-12 | 2005-06-16 | Mohammed Shaarawi | Method for making fluid emitter orifice |
US7632625B2 (en) * | 2004-05-25 | 2009-12-15 | Roberts David H | Method of pre-exposing relief image printing plate |
KR100735530B1 (ko) | 2006-02-02 | 2007-07-04 | 삼성전자주식회사 | 단차를 가진 반사층을 포함하는 반사형 포토마스크 및 그 제조방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2534795C3 (de) * | 1975-08-04 | 1978-05-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung von Strukturen aus Positiv-Fotolackschichten |
US4859573A (en) * | 1984-08-13 | 1989-08-22 | Ncr Corporation | Multiple photoresist layer process using selective hardening |
US4931380A (en) * | 1985-07-18 | 1990-06-05 | Microsi, Inc. | Pre-exposure method for increased sensitivity in high contrast resist development of positive working diazo ketone photoresist |
US4869999A (en) * | 1986-08-08 | 1989-09-26 | Hitachi, Ltd. | Method of forming pattern and projection aligner for carrying out the same |
-
1990
- 1990-08-30 KR KR9013523A patent/KR930008139B1/ko not_active IP Right Cessation
- 1990-10-31 US US07/606,750 patent/US5134058A/en not_active Expired - Lifetime
- 1990-11-07 FR FR9013811A patent/FR2666449A1/fr not_active Withdrawn
- 1990-11-28 JP JP2323352A patent/JPH04115515A/ja active Pending
-
1991
- 1991-02-06 DE DE4103565A patent/DE4103565A1/de not_active Ceased
- 1991-03-21 GB GB9105973A patent/GB2247535A/en not_active Withdrawn
- 1991-08-29 IT ITRM910643A patent/IT1250086B/it active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
GB2247535A (en) | 1992-03-04 |
KR930008139B1 (en) | 1993-08-26 |
GB9105973D0 (en) | 1991-05-08 |
US5134058A (en) | 1992-07-28 |
JPH04115515A (ja) | 1992-04-16 |
FR2666449A1 (fr) | 1992-03-06 |
ITRM910643A0 (it) | 1991-08-29 |
IT1250086B (it) | 1995-03-30 |
DE4103565A1 (de) | 1992-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |