DE68924359D1 - Ätzgerät. - Google Patents
Ätzgerät.Info
- Publication number
- DE68924359D1 DE68924359D1 DE68924359T DE68924359T DE68924359D1 DE 68924359 D1 DE68924359 D1 DE 68924359D1 DE 68924359 T DE68924359 T DE 68924359T DE 68924359 T DE68924359 T DE 68924359T DE 68924359 D1 DE68924359 D1 DE 68924359D1
- Authority
- DE
- Germany
- Prior art keywords
- etching machine
- etching
- machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1035888 | 1988-01-20 | ||
JP3209988 | 1988-02-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68924359D1 true DE68924359D1 (de) | 1995-11-02 |
DE68924359T2 DE68924359T2 (de) | 1996-03-21 |
Family
ID=26345615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68924359T Expired - Lifetime DE68924359T2 (de) | 1988-01-20 | 1989-01-19 | Ätzgerät. |
Country Status (4)
Country | Link |
---|---|
US (2) | US4963713A (de) |
EP (1) | EP0325243B1 (de) |
KR (1) | KR0129663B1 (de) |
DE (1) | DE68924359T2 (de) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5248370A (en) * | 1989-05-08 | 1993-09-28 | Applied Materials, Inc. | Apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment |
DE69130987T2 (de) * | 1990-04-20 | 1999-09-30 | Applied Materials Inc | Vorrichtung zur Behandlung von Halbleiter-Plättchen |
US5673750A (en) * | 1990-05-19 | 1997-10-07 | Hitachi, Ltd. | Vacuum processing method and apparatus |
US5096536A (en) * | 1990-06-12 | 1992-03-17 | Micron Technology, Inc. | Method and apparatus useful in the plasma etching of semiconductor materials |
US5074456A (en) | 1990-09-18 | 1991-12-24 | Lam Research Corporation | Composite electrode for plasma processes |
FR2666821B1 (fr) * | 1990-09-19 | 1992-10-23 | Ugine Aciers | Dispositif de traitement superficiel d'une plaque ou d'une tole d'un materiau metallique par plasma basse temperature. |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5187046A (en) * | 1991-03-18 | 1993-02-16 | Aluminum Company Of America | Arc-grained lithoplate |
JPH05166757A (ja) * | 1991-12-13 | 1993-07-02 | Tokyo Electron Ltd | 被処理体の温調装置 |
FR2694131B1 (fr) * | 1992-07-21 | 1996-09-27 | Balzers Hochvakuum | Procede et installation pour la fabrication d'un composant, notamment d'un composant optique, et composant optique ainsi obtenu. |
US5328722A (en) * | 1992-11-06 | 1994-07-12 | Applied Materials, Inc. | Metal chemical vapor deposition process using a shadow ring |
US5292554A (en) * | 1992-11-12 | 1994-03-08 | Applied Materials, Inc. | Deposition apparatus using a perforated pumping plate |
JP3242166B2 (ja) * | 1992-11-19 | 2001-12-25 | 株式会社日立製作所 | エッチング装置 |
KR100238629B1 (ko) * | 1992-12-17 | 2000-01-15 | 히가시 데쓰로 | 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 |
KR960006956B1 (ko) * | 1993-02-06 | 1996-05-25 | 현대전자산업주식회사 | 이시알(ecr) 장비 |
KR960006958B1 (ko) * | 1993-02-06 | 1996-05-25 | 현대전자산업주식회사 | 이시알 장비 |
JP3172758B2 (ja) * | 1993-11-20 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
CN1137296A (zh) * | 1993-12-17 | 1996-12-04 | 布鲁克斯自动化公司 | 加热或冷却晶片的设备 |
US5441568A (en) * | 1994-07-15 | 1995-08-15 | Applied Materials, Inc. | Exhaust baffle for uniform gas flow pattern |
JP2770753B2 (ja) * | 1994-09-16 | 1998-07-02 | 日本電気株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US5605600A (en) * | 1995-03-13 | 1997-02-25 | International Business Machines Corporation | Etch profile shaping through wafer temperature control |
US6140612A (en) | 1995-06-07 | 2000-10-31 | Lam Research Corporation | Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck |
JPH098012A (ja) * | 1995-06-21 | 1997-01-10 | Sony Corp | 半導体製造用エッチング装置 |
US5609720A (en) * | 1995-09-29 | 1997-03-11 | Lam Research Corporation | Thermal control of semiconductor wafer during reactive ion etching |
US6786998B1 (en) * | 1995-12-29 | 2004-09-07 | Cypress Semiconductor Corporation | Wafer temperature control apparatus and method |
JP3437026B2 (ja) * | 1996-02-15 | 2003-08-18 | 東海カーボン株式会社 | プラズマエッチング用電極板およびその製造方法 |
US5961851A (en) * | 1996-04-02 | 1999-10-05 | Fusion Systems Corporation | Microwave plasma discharge device |
US5906683A (en) * | 1996-04-16 | 1999-05-25 | Applied Materials, Inc. | Lid assembly for semiconductor processing chamber |
US5711851A (en) * | 1996-07-12 | 1998-01-27 | Micron Technology, Inc. | Process for improving the performance of a temperature-sensitive etch process |
US6602348B1 (en) * | 1996-09-17 | 2003-08-05 | Applied Materials, Inc. | Substrate cooldown chamber |
US6033478A (en) * | 1996-11-05 | 2000-03-07 | Applied Materials, Inc. | Wafer support with improved temperature control |
KR100252210B1 (ko) * | 1996-12-24 | 2000-04-15 | 윤종용 | 반도체장치 제조용 건식식각장치 |
JPH10240356A (ja) | 1997-02-21 | 1998-09-11 | Anelva Corp | 基板処理装置の基板温度制御法と基板温度制御性判定法 |
US5879461A (en) * | 1997-04-21 | 1999-03-09 | Brooks Automation, Inc. | Metered gas control in a substrate processing apparatus |
US5856906A (en) * | 1997-05-12 | 1999-01-05 | Applied Materials, Inc. | Backside gas quick dump apparatus for a semiconductor wafer processing system |
US5937541A (en) * | 1997-09-15 | 1999-08-17 | Siemens Aktiengesellschaft | Semiconductor wafer temperature measurement and control thereof using gas temperature measurement |
US6165910A (en) * | 1997-12-29 | 2000-12-26 | Lam Research Corporation | Self-aligned contacts for semiconductor device |
US6015465A (en) * | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
US6057244A (en) * | 1998-07-31 | 2000-05-02 | Applied Materials, Inc. | Method for improved sputter etch processing |
US6639783B1 (en) | 1998-09-08 | 2003-10-28 | Applied Materials, Inc. | Multi-layer ceramic electrostatic chuck with integrated channel |
US6572814B2 (en) | 1998-09-08 | 2003-06-03 | Applied Materials Inc. | Method of fabricating a semiconductor wafer support chuck apparatus having small diameter gas distribution ports for distributing a heat transfer gas |
JP2000345345A (ja) * | 1999-06-04 | 2000-12-12 | Mitsubishi Electric Corp | Cvd装置およびcvd装置用気化装置 |
JP4394778B2 (ja) * | 1999-09-22 | 2010-01-06 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP2001127041A (ja) * | 1999-10-26 | 2001-05-11 | Matsushita Electric Ind Co Ltd | 基板のプラズマ処理装置およびプラズマ処理方法 |
US6414271B2 (en) * | 2000-05-25 | 2002-07-02 | Kyocera Corporation | Contact heating device |
JP3594583B2 (ja) * | 2002-01-10 | 2004-12-02 | Necエレクトロニクス株式会社 | エッチング装置及びその温度制御方法 |
JPWO2005045913A1 (ja) * | 2003-11-05 | 2007-05-24 | 大見 忠弘 | プラズマ処理装置 |
US7712434B2 (en) * | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
JP4653419B2 (ja) * | 2004-05-17 | 2011-03-16 | 芝浦メカトロニクス株式会社 | 真空処理装置 |
JP4653418B2 (ja) * | 2004-05-17 | 2011-03-16 | 芝浦メカトロニクス株式会社 | 真空処理装置および光ディスクの製造方法 |
US20060108069A1 (en) * | 2004-11-19 | 2006-05-25 | Samsung Electronics Co., Ltd. | Plasma reaction chamber and captive silicon electrode plate for processing semiconductor wafers |
KR100920384B1 (ko) * | 2005-12-28 | 2009-10-07 | 주식회사 에이디피엔지니어링 | 평판표시소자 제조장치의 리프트 핀 모듈 |
US8709162B2 (en) * | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
US8375890B2 (en) * | 2007-03-19 | 2013-02-19 | Micron Technology, Inc. | Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers |
US8849585B2 (en) * | 2008-06-26 | 2014-09-30 | Lam Research Corporation | Methods for automatically characterizing a plasma |
CN104320899A (zh) | 2008-07-07 | 2015-01-28 | 朗姆研究公司 | 用于检测等离子处理室中激发步骤的电容耦合静电(cce)探针装置及其方法 |
US8164353B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber |
KR101606734B1 (ko) | 2008-07-07 | 2016-03-28 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버에서 인시츄 아킹 이벤트들을 검출하기 위한 패시브 용량성-커플링된 정전식 (cce) 프로브 장치 |
CN102084474B (zh) * | 2008-07-07 | 2012-11-14 | 朗姆研究公司 | 在等离子体处理室中检测去夹紧的电容耦合静电(cce)探针装置及其方法 |
TWI494030B (zh) * | 2008-07-07 | 2015-07-21 | Lam Res Corp | 供使用於電漿處理腔室中之含真空間隙的面向電漿之探針裝置 |
WO2010005933A2 (en) | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting plasma instabilities in a plasma processing chamber |
EP2409324A4 (de) * | 2009-03-16 | 2013-05-15 | Alta Devices Inc | Waferträgerspur |
US9728429B2 (en) * | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
KR20150046966A (ko) * | 2013-10-23 | 2015-05-04 | 삼성디스플레이 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US10871477B2 (en) * | 2015-08-20 | 2020-12-22 | The United States Of America, As Represented By The Secretary Of The Navy | Contaminant cleaning systems and related methods using one or more reactive substances, reaction byproduct measurements, and differential pressure or vacuum transfer of the reactive substances and reaction byproducts |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH593754A5 (de) * | 1976-01-15 | 1977-12-15 | Castolin Sa | |
JPS5349398A (en) * | 1976-10-15 | 1978-05-04 | Fujitsu Ltd | Plasma etching method |
US4361749A (en) * | 1980-02-04 | 1982-11-30 | Western Electric Co., Inc. | Uniformly cooled plasma etching electrode |
JPS56151170A (en) * | 1980-04-23 | 1981-11-24 | Kubota Ltd | Method and device for plasma welding |
US4367114A (en) * | 1981-05-06 | 1983-01-04 | The Perkin-Elmer Corporation | High speed plasma etching system |
JPS5919328A (ja) * | 1982-07-23 | 1984-01-31 | Hitachi Ltd | ドライエツチング装置 |
US4547648A (en) * | 1983-02-28 | 1985-10-15 | Rca Corporation | Apparatus for mounting crystal |
US4603466A (en) * | 1984-02-17 | 1986-08-05 | Gca Corporation | Wafer chuck |
US4534816A (en) * | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
US4695700A (en) * | 1984-10-22 | 1987-09-22 | Texas Instruments Incorporated | Dual detector system for determining endpoint of plasma etch process |
US4659899A (en) * | 1984-10-24 | 1987-04-21 | The Perkin-Elmer Corporation | Vacuum-compatible air-cooled plasma device |
JPS6218028A (ja) * | 1985-07-16 | 1987-01-27 | Toshiba Corp | デイスカム装置 |
JPS6372877A (ja) * | 1986-09-12 | 1988-04-02 | Tokuda Seisakusho Ltd | 真空処理装置 |
JPS63204726A (ja) * | 1987-02-20 | 1988-08-24 | Anelva Corp | 真空処理装置 |
-
1989
- 1989-01-12 KR KR1019890000260A patent/KR0129663B1/ko not_active IP Right Cessation
- 1989-01-19 EP EP89100868A patent/EP0325243B1/de not_active Expired - Lifetime
- 1989-01-19 DE DE68924359T patent/DE68924359T2/de not_active Expired - Lifetime
- 1989-01-19 US US07/298,892 patent/US4963713A/en not_active Expired - Lifetime
-
1990
- 1990-07-17 US US07/553,316 patent/US5155331A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5155331A (en) | 1992-10-13 |
KR0129663B1 (ko) | 1998-04-06 |
EP0325243A2 (de) | 1989-07-26 |
EP0325243A3 (en) | 1990-09-26 |
KR890012367A (ko) | 1989-08-26 |
EP0325243B1 (de) | 1995-09-27 |
US4963713A (en) | 1990-10-16 |
DE68924359T2 (de) | 1996-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE68924359D1 (de) | Ätzgerät. | |
DE3780024D1 (de) | Zerreissmaschine. | |
FI904140A0 (fi) | Omvandlingsbar baedd- badrum -kombination. | |
FI891203A0 (fi) | Polyamidaminhartser. | |
FI893510A (fi) | Aendfoerslutning foer luftfjaeder. | |
DE58902509D1 (de) | Aufspulmaschine. | |
FI885411A (fi) | Ljusbestraolningsapparat foer medicinskt bruk. | |
DE58904437D1 (de) | Rakelfarbwerk. | |
DE58904326D1 (de) | Rakelfarbwerk. | |
DE68903708D1 (de) | Spielkasten. | |
DE68902812D1 (de) | Biegemaschine. | |
IT1229367B (it) | Macchina cablatrice. | |
DE3888762D1 (de) | Ziehmaschine. | |
FI912805A0 (fi) | Filtrerapparat. | |
DE3864212D1 (de) | Haekelgalonmaschine. | |
DE68913786D1 (de) | Bodenbearbeitungsmaschine. | |
DE58903112D1 (de) | Kannenstock. | |
DE68917812D1 (de) | Leisten. | |
FI890892A (fi) | B-amylasgen. | |
DE68901775D1 (de) | Mammographiegeraet. | |
DE58902190D1 (de) | Schaelmaschine. | |
DE58905035D1 (de) | Kaemmaschine. | |
DE69005865D1 (de) | Fertigungsmaschine. | |
DE68909896D1 (de) | Bodenbearbeitungsmaschine. | |
DE58903712D1 (de) | Gegenseheinrichtung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |