DE69227106T2 - Struktur zur Vermeidung des Durchschaltens einer parasitären Diode, die sich in einer epitaktischen Wanne von integrierten Schaltungen befindet - Google Patents

Struktur zur Vermeidung des Durchschaltens einer parasitären Diode, die sich in einer epitaktischen Wanne von integrierten Schaltungen befindet

Info

Publication number
DE69227106T2
DE69227106T2 DE69227106T DE69227106T DE69227106T2 DE 69227106 T2 DE69227106 T2 DE 69227106T2 DE 69227106 T DE69227106 T DE 69227106T DE 69227106 T DE69227106 T DE 69227106T DE 69227106 T2 DE69227106 T2 DE 69227106T2
Authority
DE
Germany
Prior art keywords
resistor
parasitic diode
terminal
terminals connected
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69227106T
Other languages
English (en)
Other versions
DE69227106D1 (de
Inventor
Marco Demicheli
Alberto Gola
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69227106D1 publication Critical patent/DE69227106D1/de
Application granted granted Critical
Publication of DE69227106T2 publication Critical patent/DE69227106T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69227106T 1992-06-30 1992-06-30 Struktur zur Vermeidung des Durchschaltens einer parasitären Diode, die sich in einer epitaktischen Wanne von integrierten Schaltungen befindet Expired - Fee Related DE69227106T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92830338A EP0577906B1 (de) 1992-06-30 1992-06-30 Struktur zur Vermeidung des Durchschaltens einer parasitären Diode, die sich in einer epitaktischen Wanne von integrierten Schaltungen befindet

Publications (2)

Publication Number Publication Date
DE69227106D1 DE69227106D1 (de) 1998-10-29
DE69227106T2 true DE69227106T2 (de) 1999-04-01

Family

ID=8212130

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69227106T Expired - Fee Related DE69227106T2 (de) 1992-06-30 1992-06-30 Struktur zur Vermeidung des Durchschaltens einer parasitären Diode, die sich in einer epitaktischen Wanne von integrierten Schaltungen befindet

Country Status (5)

Country Link
US (1) US5300805A (de)
EP (1) EP0577906B1 (de)
JP (1) JP3179630B2 (de)
AT (1) ATE171565T1 (de)
DE (1) DE69227106T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475340A (en) * 1994-05-23 1995-12-12 Delco Electronics Corporation Active biasing circuit for an epitaxial region in a fault-tolerant, vertical pnp output transistor
US5895960A (en) * 1996-09-03 1999-04-20 Lucent Technologies Inc. Thin oxide mask level defined resistor
JP3372923B2 (ja) * 2000-02-25 2003-02-04 エヌイーシーマイクロシステム株式会社 半導体集積回路
JP4610786B2 (ja) * 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829709A (en) * 1973-08-31 1974-08-13 Micro Components Corp Supply reversal protecton circuit
DE3276513D1 (en) * 1982-11-26 1987-07-09 Ibm Self-biased resistor structure and application to interface circuits realization
IT1215402B (it) * 1987-03-31 1990-02-08 Sgs Microelettronica Spa Circuito integrato di pilotaggio di carichi induttivi riferiti a terra.
FR2624655B1 (fr) * 1987-12-14 1990-05-11 Sgs Thomson Microelectronics Structure de protection d'un acces a un circuit integre
US5051612A (en) * 1989-02-10 1991-09-24 Texas Instruments Incorporated Prevention of parasitic mechanisms in junction isolated devices

Also Published As

Publication number Publication date
EP0577906A1 (de) 1994-01-12
JPH06163817A (ja) 1994-06-10
DE69227106D1 (de) 1998-10-29
EP0577906B1 (de) 1998-09-23
JP3179630B2 (ja) 2001-06-25
US5300805A (en) 1994-04-05
ATE171565T1 (de) 1998-10-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee