DE68928763T2 - Verfahren zur Herstellung von isolierten vertikalbipolaren und JFET-Transistoren und entsprechender IC - Google Patents

Verfahren zur Herstellung von isolierten vertikalbipolaren und JFET-Transistoren und entsprechender IC

Info

Publication number
DE68928763T2
DE68928763T2 DE68928763T DE68928763T DE68928763T2 DE 68928763 T2 DE68928763 T2 DE 68928763T2 DE 68928763 T DE68928763 T DE 68928763T DE 68928763 T DE68928763 T DE 68928763T DE 68928763 T2 DE68928763 T2 DE 68928763T2
Authority
DE
Germany
Prior art keywords
production
vertical bipolar
isolated vertical
jfet transistors
jfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928763T
Other languages
English (en)
Other versions
DE68928763D1 (de
Inventor
Michael R Seacrist
Joe R Trogolo
Kenneth M Bell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE68928763D1 publication Critical patent/DE68928763D1/de
Publication of DE68928763T2 publication Critical patent/DE68928763T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE68928763T 1988-06-27 1989-04-21 Verfahren zur Herstellung von isolierten vertikalbipolaren und JFET-Transistoren und entsprechender IC Expired - Fee Related DE68928763T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21164188A 1988-06-27 1988-06-27

Publications (2)

Publication Number Publication Date
DE68928763D1 DE68928763D1 (de) 1998-09-10
DE68928763T2 true DE68928763T2 (de) 1999-04-08

Family

ID=22787775

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68928763T Expired - Fee Related DE68928763T2 (de) 1988-06-27 1989-04-21 Verfahren zur Herstellung von isolierten vertikalbipolaren und JFET-Transistoren und entsprechender IC
DE68929433T Expired - Fee Related DE68929433T2 (de) 1988-06-27 1989-04-21 Verfahren zur Herstellung von JFET-Transistoren und Kondensatoren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE68929433T Expired - Fee Related DE68929433T2 (de) 1988-06-27 1989-04-21 Verfahren zur Herstellung von JFET-Transistoren und Kondensatoren

Country Status (4)

Country Link
EP (2) EP0348626B1 (de)
JP (2) JPH0691192B2 (de)
KR (1) KR0169097B1 (de)
DE (2) DE68928763T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2305776B (en) * 1995-09-28 1999-11-17 Gresham Sensor Technology Limi Charge amplifier
EP0849771A1 (de) * 1996-12-19 1998-06-24 Motorola Semiconducteurs S.A. Verfahren zum Herstellen eines Verarmungs-JFET und Verfahren zum Herstellen eines Verarmungs-JFET und eines Bipolartransistors auf einem Halbleitersubstrat
JP3530414B2 (ja) * 1999-03-26 2004-05-24 三洋電機株式会社 半導体装置
WO2011109442A2 (en) 2010-03-02 2011-09-09 Oliver Steven D Led packaging with integrated optics and methods of manufacturing the same
US11482521B2 (en) * 2020-02-06 2022-10-25 Globalfoundries U.S. Inc. Integrated circuit with P-N-P junction and vertically aligned field effect transistor, and method to form same
CN113097309A (zh) * 2021-03-31 2021-07-09 上海晶丰明源半导体股份有限公司 结型场效应晶体管及半导体器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1559609A (de) * 1967-06-30 1969-03-14
JPS553691A (en) * 1978-06-13 1980-01-11 Ibm Integrated circuit having junction field effect transistor
US4322738A (en) * 1980-01-21 1982-03-30 Texas Instruments Incorporated N-Channel JFET device compatible with existing bipolar integrated circuit processing techniques
JPS57128073A (en) * 1981-12-21 1982-08-09 Hitachi Ltd Semiconductor integrated circuit device
US4419812A (en) * 1982-08-23 1983-12-13 Ncr Corporation Method of fabricating an integrated circuit voltage multiplier containing a parallel plate capacitor
JPS60117765A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH04226061A (ja) 1992-08-14
EP0348626A2 (de) 1990-01-03
JPH0691192B2 (ja) 1994-11-14
EP0348626A3 (de) 1991-07-31
KR0169097B1 (ko) 1999-01-15
EP0348626B1 (de) 1998-08-05
EP0627767B1 (de) 2002-11-06
DE68929433T2 (de) 2003-06-26
DE68929433D1 (de) 2002-12-12
JPH0251264A (ja) 1990-02-21
DE68928763D1 (de) 1998-09-10
EP0627767A1 (de) 1994-12-07
KR900001036A (ko) 1990-01-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee