GB2305776B - Charge amplifier - Google Patents

Charge amplifier

Info

Publication number
GB2305776B
GB2305776B GB9519765A GB9519765A GB2305776B GB 2305776 B GB2305776 B GB 2305776B GB 9519765 A GB9519765 A GB 9519765A GB 9519765 A GB9519765 A GB 9519765A GB 2305776 B GB2305776 B GB 2305776B
Authority
GB
United Kingdom
Prior art keywords
charge amplifier
amplifier
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9519765A
Other versions
GB9519765D0 (en
GB2305776A (en
Inventor
Tawfic Nashashibi
Robert Anthony Sareen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GRESHAM SENSOR TECHNOLOGY LIMI
Original Assignee
GRESHAM SENSOR TECHNOLOGY LIMI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GRESHAM SENSOR TECHNOLOGY LIMI filed Critical GRESHAM SENSOR TECHNOLOGY LIMI
Priority to GB9519765A priority Critical patent/GB2305776B/en
Publication of GB9519765D0 publication Critical patent/GB9519765D0/en
Publication of GB2305776A publication Critical patent/GB2305776A/en
Application granted granted Critical
Publication of GB2305776B publication Critical patent/GB2305776B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/70—Charge amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/067—Lateral bipolar transistor in combination with diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measurement Of Radiation (AREA)
GB9519765A 1995-09-28 1995-09-28 Charge amplifier Expired - Fee Related GB2305776B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9519765A GB2305776B (en) 1995-09-28 1995-09-28 Charge amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9519765A GB2305776B (en) 1995-09-28 1995-09-28 Charge amplifier

Publications (3)

Publication Number Publication Date
GB9519765D0 GB9519765D0 (en) 1995-11-29
GB2305776A GB2305776A (en) 1997-04-16
GB2305776B true GB2305776B (en) 1999-11-17

Family

ID=10781399

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9519765A Expired - Fee Related GB2305776B (en) 1995-09-28 1995-09-28 Charge amplifier

Country Status (1)

Country Link
GB (1) GB2305776B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2491111B (en) * 2011-05-19 2015-08-19 Oxford Instr Nanotechnology Tools Ltd Charge-sensitive amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677589A (en) * 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
WO1993011540A1 (en) * 1991-11-26 1993-06-10 Purdue Research Foundation Nonvolatile random access memory device
EP0627767A1 (en) * 1988-06-27 1994-12-07 Texas Instruments Incorporated Process for fabricating isolated vertical bipolar and JFET transistors and capacitors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677589A (en) * 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
EP0627767A1 (en) * 1988-06-27 1994-12-07 Texas Instruments Incorporated Process for fabricating isolated vertical bipolar and JFET transistors and capacitors
WO1993011540A1 (en) * 1991-11-26 1993-06-10 Purdue Research Foundation Nonvolatile random access memory device

Also Published As

Publication number Publication date
GB9519765D0 (en) 1995-11-29
GB2305776A (en) 1997-04-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20110928