DE2122192C3 - Verfahren zur Vorbehandlung von beim Züchten von halbleitenden Kristallen als Einschließungsmittel verwendetem Boroxid - Google Patents

Verfahren zur Vorbehandlung von beim Züchten von halbleitenden Kristallen als Einschließungsmittel verwendetem Boroxid

Info

Publication number
DE2122192C3
DE2122192C3 DE2122192A DE2122192A DE2122192C3 DE 2122192 C3 DE2122192 C3 DE 2122192C3 DE 2122192 A DE2122192 A DE 2122192A DE 2122192 A DE2122192 A DE 2122192A DE 2122192 C3 DE2122192 C3 DE 2122192C3
Authority
DE
Germany
Prior art keywords
boron oxide
boron
oxide
getter material
pretreatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2122192A
Other languages
German (de)
English (en)
Other versions
DE2122192A1 (de
DE2122192B2 (de
Inventor
Martin Eric Bridgewater Township N.J. Weiner (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE2122192A1 publication Critical patent/DE2122192A1/de
Publication of DE2122192B2 publication Critical patent/DE2122192B2/de
Application granted granted Critical
Publication of DE2122192C3 publication Critical patent/DE2122192C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE2122192A 1970-05-11 1971-05-05 Verfahren zur Vorbehandlung von beim Züchten von halbleitenden Kristallen als Einschließungsmittel verwendetem Boroxid Expired DE2122192C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3636770A 1970-05-11 1970-05-11

Publications (3)

Publication Number Publication Date
DE2122192A1 DE2122192A1 (de) 1971-11-25
DE2122192B2 DE2122192B2 (de) 1973-10-18
DE2122192C3 true DE2122192C3 (de) 1974-06-06

Family

ID=21888223

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2122192A Expired DE2122192C3 (de) 1970-05-11 1971-05-05 Verfahren zur Vorbehandlung von beim Züchten von halbleitenden Kristallen als Einschließungsmittel verwendetem Boroxid

Country Status (9)

Country Link
US (1) US3647389A (enExample)
JP (1) JPS5026422B1 (enExample)
BE (1) BE766750A (enExample)
CA (1) CA952413A (enExample)
CH (1) CH569514A5 (enExample)
DE (1) DE2122192C3 (enExample)
FR (1) FR2088484B1 (enExample)
GB (1) GB1311048A (enExample)
IT (1) IT942100B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
JPS6024078B2 (ja) * 1977-09-05 1985-06-11 株式会社東芝 ３−５族化合物半導体単結晶の製造装置
US4277303A (en) * 1978-08-07 1981-07-07 The Harshaw Chemical Company Getter for melt-grown scintillator ingot and method for growing the ingot
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
US4431476A (en) * 1981-01-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing gallium phosphide single crystals
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
US4426237A (en) 1981-10-13 1984-01-17 International Business Machines Corporation Volatile metal oxide suppression in molecular beam epitaxy systems
US4637854A (en) * 1983-01-18 1987-01-20 Agency Of Industrial Science And Technology Method for producing GaAs single crystal
JPS59232995A (ja) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd 引上単結晶の冷却方法
EP0139157B1 (en) * 1983-08-31 1988-07-06 Research Development Corporation of Japan Apparatus for growing single crystals of dissociative compounds
US4721539A (en) * 1986-07-15 1988-01-26 The United States Of America As Represented By The United States Department Of Energy Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same
US4824520A (en) * 1987-03-19 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Liquid encapsulated crystal growth
US5186784A (en) * 1989-06-20 1993-02-16 Texas Instruments Incorporated Process for improved doping of semiconductor crystals
US5183767A (en) * 1991-02-14 1993-02-02 International Business Machines Corporation Method for internal gettering of oxygen in iii-v compound semiconductors
US5272373A (en) * 1991-02-14 1993-12-21 International Business Machines Corporation Internal gettering of oxygen in III-V compound semiconductors
US8574525B2 (en) * 2008-11-07 2013-11-05 The Regents Of The University Of California Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
RU2400574C1 (ru) * 2009-04-10 2010-09-27 Общество с ограниченной ответственностью (ООО) "ЮниСаф-Малахит" Способ получения монокристаллов a3b5

Also Published As

Publication number Publication date
GB1311048A (en) 1973-03-21
BE766750A (fr) 1971-10-01
CA952413A (en) 1974-08-06
DE2122192A1 (de) 1971-11-25
FR2088484A1 (enExample) 1972-01-07
CH569514A5 (enExample) 1975-11-28
US3647389A (en) 1972-03-07
FR2088484B1 (enExample) 1976-04-16
DE2122192B2 (de) 1973-10-18
IT942100B (it) 1973-03-20
JPS5026422B1 (enExample) 1975-09-01

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee