IT942100B - Metodo di acorescimento di cristalli di semiconduttore di gruppo iii v impiegando un incapsulante di ossido borico essiccato da assorbitore - Google Patents

Metodo di acorescimento di cristalli di semiconduttore di gruppo iii v impiegando un incapsulante di ossido borico essiccato da assorbitore

Info

Publication number
IT942100B
IT942100B IT50249/71A IT5024971A IT942100B IT 942100 B IT942100 B IT 942100B IT 50249/71 A IT50249/71 A IT 50249/71A IT 5024971 A IT5024971 A IT 5024971A IT 942100 B IT942100 B IT 942100B
Authority
IT
Italy
Prior art keywords
encapsulant
absorber
enhancement
group iii
boric oxide
Prior art date
Application number
IT50249/71A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT942100B publication Critical patent/IT942100B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT50249/71A 1970-05-11 1971-05-11 Metodo di acorescimento di cristalli di semiconduttore di gruppo iii v impiegando un incapsulante di ossido borico essiccato da assorbitore IT942100B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3636770A 1970-05-11 1970-05-11

Publications (1)

Publication Number Publication Date
IT942100B true IT942100B (it) 1973-03-20

Family

ID=21888223

Family Applications (1)

Application Number Title Priority Date Filing Date
IT50249/71A IT942100B (it) 1970-05-11 1971-05-11 Metodo di acorescimento di cristalli di semiconduttore di gruppo iii v impiegando un incapsulante di ossido borico essiccato da assorbitore

Country Status (9)

Country Link
US (1) US3647389A (it)
JP (1) JPS5026422B1 (it)
BE (1) BE766750A (it)
CA (1) CA952413A (it)
CH (1) CH569514A5 (it)
DE (1) DE2122192C3 (it)
FR (1) FR2088484B1 (it)
GB (1) GB1311048A (it)
IT (1) IT942100B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
JPS6024078B2 (ja) * 1977-09-05 1985-06-11 株式会社東芝 ３−５族化合物半導体単結晶の製造装置
US4277303A (en) * 1978-08-07 1981-07-07 The Harshaw Chemical Company Getter for melt-grown scintillator ingot and method for growing the ingot
US4299650A (en) * 1979-10-12 1981-11-10 Bell Telephone Laboratories, Incorporated Minimization of strain in single crystals
US4431476A (en) * 1981-01-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing gallium phosphide single crystals
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
US4637854A (en) * 1983-01-18 1987-01-20 Agency Of Industrial Science And Technology Method for producing GaAs single crystal
JPS59232995A (ja) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd 引上単結晶の冷却方法
DE139157T1 (de) * 1983-08-31 1985-11-07 Research Development Corp. Of Japan, Tokio/Tokyo Vorrichtung zur zuechtung von einkristallinen zersetzbaren verbindungen.
US4721539A (en) * 1986-07-15 1988-01-26 The United States Of America As Represented By The United States Department Of Energy Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same
US4824520A (en) * 1987-03-19 1989-04-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Liquid encapsulated crystal growth
US5186784A (en) * 1989-06-20 1993-02-16 Texas Instruments Incorporated Process for improved doping of semiconductor crystals
US5183767A (en) * 1991-02-14 1993-02-02 International Business Machines Corporation Method for internal gettering of oxygen in iii-v compound semiconductors
US5272373A (en) * 1991-02-14 1993-12-21 International Business Machines Corporation Internal gettering of oxygen in III-V compound semiconductors
WO2010053960A1 (en) * 2008-11-07 2010-05-14 The Regents Of The University Of California Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals

Also Published As

Publication number Publication date
GB1311048A (en) 1973-03-21
DE2122192C3 (de) 1974-06-06
DE2122192B2 (de) 1973-10-18
BE766750A (fr) 1971-10-01
CH569514A5 (it) 1975-11-28
DE2122192A1 (de) 1971-11-25
FR2088484B1 (it) 1976-04-16
JPS5026422B1 (it) 1975-09-01
FR2088484A1 (it) 1972-01-07
US3647389A (en) 1972-03-07
CA952413A (en) 1974-08-06

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