DE2103900B2 - Integrierter Festwertspeicher - Google Patents

Integrierter Festwertspeicher

Info

Publication number
DE2103900B2
DE2103900B2 DE2103900A DE2103900A DE2103900B2 DE 2103900 B2 DE2103900 B2 DE 2103900B2 DE 2103900 A DE2103900 A DE 2103900A DE 2103900 A DE2103900 A DE 2103900A DE 2103900 B2 DE2103900 B2 DE 2103900B2
Authority
DE
Germany
Prior art keywords
transistors
connections
lines
base
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2103900A
Other languages
German (de)
English (en)
Other versions
DE2103900A1 (de
Inventor
John C. Sunnyvale Barrett
Arndt B. Bergh
Tomas Los Altos Calif. Hornak (V.St.A.)
John E. Price
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE2103900A1 publication Critical patent/DE2103900A1/de
Publication of DE2103900B2 publication Critical patent/DE2103900B2/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/10—ROM devices comprising bipolar components

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE2103900A 1970-02-18 1971-01-28 Integrierter Festwertspeicher Pending DE2103900B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1226270A 1970-02-18 1970-02-18

Publications (2)

Publication Number Publication Date
DE2103900A1 DE2103900A1 (de) 1971-09-16
DE2103900B2 true DE2103900B2 (de) 1975-06-19

Family

ID=21754117

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2103900A Pending DE2103900B2 (de) 1970-02-18 1971-01-28 Integrierter Festwertspeicher

Country Status (6)

Country Link
US (1) US3721964A (OSRAM)
CA (1) CA941965A (OSRAM)
DE (1) DE2103900B2 (OSRAM)
FR (1) FR2081010B1 (OSRAM)
GB (1) GB1344871A (OSRAM)
MY (1) MY7500227A (OSRAM)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890602A (en) * 1972-10-25 1975-06-17 Nippon Musical Instruments Mfg Waveform producing device
US3872450A (en) * 1973-06-21 1975-03-18 Motorola Inc Fusible link memory cell for a programmable read only memory
US3940740A (en) * 1973-06-27 1976-02-24 Actron Industries, Inc. Method for providing reconfigurable microelectronic circuit devices and products produced thereby
US3934233A (en) * 1973-09-24 1976-01-20 Texas Instruments Incorporated Read-only-memory for electronic calculator
US4027285A (en) * 1973-12-26 1977-05-31 Motorola, Inc. Decode circuitry for bipolar random access memory
DE2505186C3 (de) * 1974-02-15 1979-07-12 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Programmierbarer Lesespeicher
JPS5751195B2 (OSRAM) * 1974-07-03 1982-10-30
US4021781A (en) * 1974-11-19 1977-05-03 Texas Instruments Incorporated Virtual ground read-only-memory for electronic calculator or digital processor
USRE31287E (en) * 1976-02-03 1983-06-21 Massachusetts Institute Of Technology Asynchronous logic array
US4042915A (en) * 1976-04-15 1977-08-16 National Semiconductor Corporation MOS dynamic random access memory having an improved address decoder circuit
US4130889A (en) * 1977-05-02 1978-12-19 Monolithic Memories, Inc. Programmable write-once, read-only semiconductor memory array using SCR current sink and current source devices
US4103349A (en) * 1977-06-16 1978-07-25 Rockwell International Corporation Output address decoder with gating logic for increased speed and less chip area
DE2835086A1 (de) * 1977-08-16 1979-03-01 Kruschanov Halbleitermatrix eines integrierten konstantspeichers
US4195354A (en) * 1977-08-16 1980-03-25 Dubinin Viktor P Semiconductor matrix for integrated read-only storage
US4139907A (en) * 1977-08-31 1979-02-13 Bell Telephone Laboratories, Incorporated Integrated read only memory
US4307379A (en) * 1977-11-10 1981-12-22 Raytheon Company Integrated circuit component
JPS607388B2 (ja) * 1978-09-08 1985-02-23 富士通株式会社 半導体記憶装置
US4192016A (en) * 1978-10-20 1980-03-04 Harris Semiconductor CMOS-bipolar EAROM
JPS55142475A (en) * 1979-04-23 1980-11-07 Fujitsu Ltd Decoder circuit
JPS5720463A (en) * 1980-07-14 1982-02-02 Toshiba Corp Semiconductor memory device
US4422162A (en) * 1980-10-01 1983-12-20 Motorola, Inc. Non-dissipative memory system
FR2512999A1 (fr) * 1981-09-14 1983-03-18 Radiotechnique Compelec Dispositif semiconducteur formant memoire morte programmable a transistors
DE3520003A1 (de) * 1985-06-04 1986-12-04 Texas Instruments Deutschland Gmbh, 8050 Freising Elektrisch programmierbare verknuepfungsmatrix
GB2253489B (en) * 1991-03-06 1995-06-07 Motorola Inc Programmable read only memory
US5661047A (en) * 1994-10-05 1997-08-26 United Microelectronics Corporation Method for forming bipolar ROM device
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US7593256B2 (en) * 2006-03-28 2009-09-22 Contour Semiconductor, Inc. Memory array with readout isolation
US7813157B2 (en) 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
WO2009149061A2 (en) * 2008-06-02 2009-12-10 Contour Semiconductor, Inc. Diode decoder array with non-sequential layout and methods of forming the same
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US20170070225A1 (en) * 2015-09-08 2017-03-09 Qualcomm Incorporated Power gating devices and methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268381A (OSRAM) * 1960-09-28
US3461436A (en) * 1965-08-06 1969-08-12 Transitron Electronic Corp Matrix-type,permanent memory device
US3388386A (en) * 1965-10-22 1968-06-11 Philco Ford Corp Tunnel diode memory system
US3427598A (en) * 1965-12-09 1969-02-11 Fairchild Camera Instr Co Emitter gated memory cell
US3478319A (en) * 1966-01-04 1969-11-11 Honeywell Inc Multiemitter-follower circuits
US3377513A (en) * 1966-05-02 1968-04-09 North American Rockwell Integrated circuit diode matrix
NL152118B (nl) * 1966-05-19 1977-01-17 Philips Nv Halfgeleider-leesgeheugenmatrix.
FR1533269A (fr) * 1966-05-19 1968-07-19 Philips Nv Mémoire matricielle de lecture en matériau semi-conducteur
FR1499444A (fr) * 1966-09-16 1967-10-27 Constr Telephoniques Matrice de circuits logiques intégrés
US3576549A (en) * 1969-04-14 1971-04-27 Cogar Corp Semiconductor device, method, and memory array
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Also Published As

Publication number Publication date
FR2081010A1 (OSRAM) 1971-11-26
DE2103900A1 (de) 1971-09-16
GB1344871A (en) 1974-01-23
US3721964A (en) 1973-03-20
CA941965A (en) 1974-02-12
MY7500227A (en) 1975-12-31
FR2081010B1 (OSRAM) 1976-09-03

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