|
US3890602A
(en)
*
|
1972-10-25 |
1975-06-17 |
Nippon Musical Instruments Mfg |
Waveform producing device
|
|
US3872450A
(en)
*
|
1973-06-21 |
1975-03-18 |
Motorola Inc |
Fusible link memory cell for a programmable read only memory
|
|
US3940740A
(en)
*
|
1973-06-27 |
1976-02-24 |
Actron Industries, Inc. |
Method for providing reconfigurable microelectronic circuit devices and products produced thereby
|
|
US3934233A
(en)
*
|
1973-09-24 |
1976-01-20 |
Texas Instruments Incorporated |
Read-only-memory for electronic calculator
|
|
US4027285A
(en)
*
|
1973-12-26 |
1977-05-31 |
Motorola, Inc. |
Decode circuitry for bipolar random access memory
|
|
DE2505186C3
(de)
*
|
1974-02-15 |
1979-07-12 |
N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) |
Programmierbarer Lesespeicher
|
|
JPS5751195B2
(OSRAM)
*
|
1974-07-03 |
1982-10-30 |
|
|
|
US4021781A
(en)
*
|
1974-11-19 |
1977-05-03 |
Texas Instruments Incorporated |
Virtual ground read-only-memory for electronic calculator or digital processor
|
|
USRE31287E
(en)
*
|
1976-02-03 |
1983-06-21 |
Massachusetts Institute Of Technology |
Asynchronous logic array
|
|
US4042915A
(en)
*
|
1976-04-15 |
1977-08-16 |
National Semiconductor Corporation |
MOS dynamic random access memory having an improved address decoder circuit
|
|
US4130889A
(en)
*
|
1977-05-02 |
1978-12-19 |
Monolithic Memories, Inc. |
Programmable write-once, read-only semiconductor memory array using SCR current sink and current source devices
|
|
US4103349A
(en)
*
|
1977-06-16 |
1978-07-25 |
Rockwell International Corporation |
Output address decoder with gating logic for increased speed and less chip area
|
|
US4195354A
(en)
*
|
1977-08-16 |
1980-03-25 |
Dubinin Viktor P |
Semiconductor matrix for integrated read-only storage
|
|
DE2835086A1
(de)
*
|
1977-08-16 |
1979-03-01 |
Kruschanov |
Halbleitermatrix eines integrierten konstantspeichers
|
|
US4139907A
(en)
*
|
1977-08-31 |
1979-02-13 |
Bell Telephone Laboratories, Incorporated |
Integrated read only memory
|
|
US4307379A
(en)
*
|
1977-11-10 |
1981-12-22 |
Raytheon Company |
Integrated circuit component
|
|
JPS607388B2
(ja)
*
|
1978-09-08 |
1985-02-23 |
富士通株式会社 |
半導体記憶装置
|
|
US4192016A
(en)
*
|
1978-10-20 |
1980-03-04 |
Harris Semiconductor |
CMOS-bipolar EAROM
|
|
JPS55142475A
(en)
*
|
1979-04-23 |
1980-11-07 |
Fujitsu Ltd |
Decoder circuit
|
|
JPS5720463A
(en)
|
1980-07-14 |
1982-02-02 |
Toshiba Corp |
Semiconductor memory device
|
|
US4422162A
(en)
*
|
1980-10-01 |
1983-12-20 |
Motorola, Inc. |
Non-dissipative memory system
|
|
FR2512999A1
(fr)
*
|
1981-09-14 |
1983-03-18 |
Radiotechnique Compelec |
Dispositif semiconducteur formant memoire morte programmable a transistors
|
|
DE3520003A1
(de)
*
|
1985-06-04 |
1986-12-04 |
Texas Instruments Deutschland Gmbh, 8050 Freising |
Elektrisch programmierbare verknuepfungsmatrix
|
|
GB2253489B
(en)
*
|
1991-03-06 |
1995-06-07 |
Motorola Inc |
Programmable read only memory
|
|
US5661047A
(en)
*
|
1994-10-05 |
1997-08-26 |
United Microelectronics Corporation |
Method for forming bipolar ROM device
|
|
US5673218A
(en)
|
1996-03-05 |
1997-09-30 |
Shepard; Daniel R. |
Dual-addressed rectifier storage device
|
|
US6956757B2
(en)
*
|
2000-06-22 |
2005-10-18 |
Contour Semiconductor, Inc. |
Low cost high density rectifier matrix memory
|
|
US7593256B2
(en)
*
|
2006-03-28 |
2009-09-22 |
Contour Semiconductor, Inc. |
Memory array with readout isolation
|
|
US7813157B2
(en)
|
2007-10-29 |
2010-10-12 |
Contour Semiconductor, Inc. |
Non-linear conductor memory
|
|
US20090225621A1
(en)
*
|
2008-03-05 |
2009-09-10 |
Shepard Daniel R |
Split decoder storage array and methods of forming the same
|
|
US20090296445A1
(en)
*
|
2008-06-02 |
2009-12-03 |
Shepard Daniel R |
Diode decoder array with non-sequential layout and methods of forming the same
|
|
US8325556B2
(en)
*
|
2008-10-07 |
2012-12-04 |
Contour Semiconductor, Inc. |
Sequencing decoder circuit
|
|
US20170070225A1
(en)
*
|
2015-09-08 |
2017-03-09 |
Qualcomm Incorporated |
Power gating devices and methods
|