DE2016574A1 - Verfahren zum Herstellen von n-dotiertem Halbleitermaterial beim Zonenschmelzen in Schutzgasatmosphäre - Google Patents
Verfahren zum Herstellen von n-dotiertem Halbleitermaterial beim Zonenschmelzen in SchutzgasatmosphäreInfo
- Publication number
- DE2016574A1 DE2016574A1 DE19702016574 DE2016574A DE2016574A1 DE 2016574 A1 DE2016574 A1 DE 2016574A1 DE 19702016574 DE19702016574 DE 19702016574 DE 2016574 A DE2016574 A DE 2016574A DE 2016574 A1 DE2016574 A1 DE 2016574A1
- Authority
- DE
- Germany
- Prior art keywords
- recipient
- carrier gas
- zone
- dopant source
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000000463 material Substances 0.000 title claims description 11
- 238000004857 zone melting Methods 0.000 title claims description 11
- 230000001681 protective effect Effects 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000002019 doping agent Substances 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- RVFBZLFHKFSPRE-UHFFFAOYSA-N N(Cl)(Cl)Cl.[P] Chemical compound N(Cl)(Cl)Cl.[P] RVFBZLFHKFSPRE-UHFFFAOYSA-N 0.000 claims description 8
- 239000012159 carrier gas Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 description 5
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 101100366944 Mus musculus Ston2 gene Proteins 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25C—HAND-HELD NAILING OR STAPLING TOOLS; MANUALLY OPERATED PORTABLE STAPLING TOOLS
- B25C1/00—Hand-held nailing tools; Nail feeding devices
- B25C1/08—Hand-held nailing tools; Nail feeding devices operated by combustion pressure
- B25C1/10—Hand-held nailing tools; Nail feeding devices operated by combustion pressure generated by detonation of a cartridge
- B25C1/105—Cartridge ejecting mechanisms and latch mechanisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25C—HAND-HELD NAILING OR STAPLING TOOLS; MANUALLY OPERATED PORTABLE STAPLING TOOLS
- B25C1/00—Hand-held nailing tools; Nail feeding devices
- B25C1/08—Hand-held nailing tools; Nail feeding devices operated by combustion pressure
- B25C1/10—Hand-held nailing tools; Nail feeding devices operated by combustion pressure generated by detonation of a cartridge
- B25C1/12—Hand-held nailing tools; Nail feeding devices operated by combustion pressure generated by detonation of a cartridge acting directly on the bolt
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BE534361D BE534361A (enrdf_load_stackoverflow) | 1970-04-07 | ||
| DE19702016574 DE2016574A1 (de) | 1970-04-07 | 1970-04-07 | Verfahren zum Herstellen von n-dotiertem Halbleitermaterial beim Zonenschmelzen in Schutzgasatmosphäre |
| NL7104192A NL7104192A (enrdf_load_stackoverflow) | 1970-04-07 | 1971-03-29 | |
| FR7112040A FR2085898B1 (enrdf_load_stackoverflow) | 1970-04-07 | 1971-04-06 | |
| CA109,836A CA954424A (en) | 1970-04-07 | 1971-04-07 | Method for producing n-doped semi-conductor material during zone-melting in a protective atmosphere |
| GB2643871A GB1324473A (en) | 1970-04-07 | 1971-04-19 | Production of n-doped semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702016574 DE2016574A1 (de) | 1970-04-07 | 1970-04-07 | Verfahren zum Herstellen von n-dotiertem Halbleitermaterial beim Zonenschmelzen in Schutzgasatmosphäre |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2016574A1 true DE2016574A1 (de) | 1971-10-28 |
Family
ID=5767355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702016574 Pending DE2016574A1 (de) | 1970-04-07 | 1970-04-07 | Verfahren zum Herstellen von n-dotiertem Halbleitermaterial beim Zonenschmelzen in Schutzgasatmosphäre |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE534361A (enrdf_load_stackoverflow) |
| CA (1) | CA954424A (enrdf_load_stackoverflow) |
| DE (1) | DE2016574A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2085898B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1324473A (enrdf_load_stackoverflow) |
| NL (1) | NL7104192A (enrdf_load_stackoverflow) |
-
0
- BE BE534361D patent/BE534361A/xx unknown
-
1970
- 1970-04-07 DE DE19702016574 patent/DE2016574A1/de active Pending
-
1971
- 1971-03-29 NL NL7104192A patent/NL7104192A/xx unknown
- 1971-04-06 FR FR7112040A patent/FR2085898B1/fr not_active Expired
- 1971-04-07 CA CA109,836A patent/CA954424A/en not_active Expired
- 1971-04-19 GB GB2643871A patent/GB1324473A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2085898A1 (enrdf_load_stackoverflow) | 1971-12-31 |
| NL7104192A (enrdf_load_stackoverflow) | 1971-10-11 |
| BE534361A (enrdf_load_stackoverflow) | |
| GB1324473A (en) | 1973-07-25 |
| FR2085898B1 (enrdf_load_stackoverflow) | 1977-08-05 |
| CA954424A (en) | 1974-09-10 |
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