GB1324473A - Production of n-doped semiconductor material - Google Patents

Production of n-doped semiconductor material

Info

Publication number
GB1324473A
GB1324473A GB2643871A GB2643871A GB1324473A GB 1324473 A GB1324473 A GB 1324473A GB 2643871 A GB2643871 A GB 2643871A GB 2643871 A GB2643871 A GB 2643871A GB 1324473 A GB1324473 A GB 1324473A
Authority
GB
United Kingdom
Prior art keywords
pncl
container
phosphorus
nitrilochloride
april
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2643871A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1324473A publication Critical patent/GB1324473A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25CHAND-HELD NAILING OR STAPLING TOOLS; MANUALLY OPERATED PORTABLE STAPLING TOOLS
    • B25C1/00Hand-held nailing tools; Nail feeding devices
    • B25C1/08Hand-held nailing tools; Nail feeding devices operated by combustion pressure
    • B25C1/10Hand-held nailing tools; Nail feeding devices operated by combustion pressure generated by detonation of a cartridge
    • B25C1/105Cartridge ejecting mechanisms and latch mechanisms
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25CHAND-HELD NAILING OR STAPLING TOOLS; MANUALLY OPERATED PORTABLE STAPLING TOOLS
    • B25C1/00Hand-held nailing tools; Nail feeding devices
    • B25C1/08Hand-held nailing tools; Nail feeding devices operated by combustion pressure
    • B25C1/10Hand-held nailing tools; Nail feeding devices operated by combustion pressure generated by detonation of a cartridge
    • B25C1/12Hand-held nailing tools; Nail feeding devices operated by combustion pressure generated by detonation of a cartridge acting directly on the bolt

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
GB2643871A 1970-04-07 1971-04-19 Production of n-doped semiconductor material Expired GB1324473A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702016574 DE2016574A1 (de) 1970-04-07 1970-04-07 Verfahren zum Herstellen von n-dotiertem Halbleitermaterial beim Zonenschmelzen in Schutzgasatmosphäre

Publications (1)

Publication Number Publication Date
GB1324473A true GB1324473A (en) 1973-07-25

Family

ID=5767355

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2643871A Expired GB1324473A (en) 1970-04-07 1971-04-19 Production of n-doped semiconductor material

Country Status (6)

Country Link
BE (1) BE534361A (enrdf_load_stackoverflow)
CA (1) CA954424A (enrdf_load_stackoverflow)
DE (1) DE2016574A1 (enrdf_load_stackoverflow)
FR (1) FR2085898B1 (enrdf_load_stackoverflow)
GB (1) GB1324473A (enrdf_load_stackoverflow)
NL (1) NL7104192A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
BE534361A (enrdf_load_stackoverflow)
NL7104192A (enrdf_load_stackoverflow) 1971-10-11
FR2085898A1 (enrdf_load_stackoverflow) 1971-12-31
CA954424A (en) 1974-09-10
FR2085898B1 (enrdf_load_stackoverflow) 1977-08-05
DE2016574A1 (de) 1971-10-28

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee