CA954424A - Method for producing n-doped semi-conductor material during zone-melting in a protective atmosphere - Google Patents

Method for producing n-doped semi-conductor material during zone-melting in a protective atmosphere

Info

Publication number
CA954424A
CA954424A CA109,836A CA109836A CA954424A CA 954424 A CA954424 A CA 954424A CA 109836 A CA109836 A CA 109836A CA 954424 A CA954424 A CA 954424A
Authority
CA
Canada
Prior art keywords
melting
producing
material during
conductor material
protective atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA109,836A
Inventor
Wolfgang Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA954424A publication Critical patent/CA954424A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25C—HAND-HELD NAILING OR STAPLING TOOLS; MANUALLY OPERATED PORTABLE STAPLING TOOLS
    • B25C1/00—Hand-held nailing tools; Nail feeding devices
    • B25C1/08—Hand-held nailing tools; Nail feeding devices operated by combustion pressure
    • B25C1/10—Hand-held nailing tools; Nail feeding devices operated by combustion pressure generated by detonation of a cartridge
    • B25C1/105—Cartridge ejecting mechanisms and latch mechanisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25C—HAND-HELD NAILING OR STAPLING TOOLS; MANUALLY OPERATED PORTABLE STAPLING TOOLS
    • B25C1/00—Hand-held nailing tools; Nail feeding devices
    • B25C1/08—Hand-held nailing tools; Nail feeding devices operated by combustion pressure
    • B25C1/10—Hand-held nailing tools; Nail feeding devices operated by combustion pressure generated by detonation of a cartridge
    • B25C1/12—Hand-held nailing tools; Nail feeding devices operated by combustion pressure generated by detonation of a cartridge acting directly on the bolt

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CA109,836A 1970-04-07 1971-04-07 Method for producing n-doped semi-conductor material during zone-melting in a protective atmosphere Expired CA954424A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702016574 DE2016574A1 (en) 1970-04-07 1970-04-07 Process for the production of n-doped semiconductor material during zone melting in a protective gas atmosphere

Publications (1)

Publication Number Publication Date
CA954424A true CA954424A (en) 1974-09-10

Family

ID=5767355

Family Applications (1)

Application Number Title Priority Date Filing Date
CA109,836A Expired CA954424A (en) 1970-04-07 1971-04-07 Method for producing n-doped semi-conductor material during zone-melting in a protective atmosphere

Country Status (6)

Country Link
BE (1) BE534361A (en)
CA (1) CA954424A (en)
DE (1) DE2016574A1 (en)
FR (1) FR2085898B1 (en)
GB (1) GB1324473A (en)
NL (1) NL7104192A (en)

Also Published As

Publication number Publication date
DE2016574A1 (en) 1971-10-28
FR2085898A1 (en) 1971-12-31
GB1324473A (en) 1973-07-25
NL7104192A (en) 1971-10-11
FR2085898B1 (en) 1977-08-05
BE534361A (en)

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