GB1303944A - - Google Patents

Info

Publication number
GB1303944A
GB1303944A GB1095271A GB1095271A GB1303944A GB 1303944 A GB1303944 A GB 1303944A GB 1095271 A GB1095271 A GB 1095271A GB 1095271 A GB1095271 A GB 1095271A GB 1303944 A GB1303944 A GB 1303944A
Authority
GB
United Kingdom
Prior art keywords
zone
april
melting
nozzle
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1095271A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1303944A publication Critical patent/GB1303944A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • General Induction Heating (AREA)
GB1095271A 1970-04-24 1971-04-23 Expired GB1303944A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702020182 DE2020182C3 (de) 1970-04-24 1970-04-24 Vorrichtung zum Dotieren von Halbleitermaterial beim tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
GB1303944A true GB1303944A (enrdf_load_stackoverflow) 1973-01-24

Family

ID=5769283

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1095271A Expired GB1303944A (enrdf_load_stackoverflow) 1970-04-24 1971-04-23

Country Status (6)

Country Link
BE (1) BE766213A (enrdf_load_stackoverflow)
DE (1) DE2020182C3 (enrdf_load_stackoverflow)
DK (1) DK138257C (enrdf_load_stackoverflow)
FR (1) FR2090608A5 (enrdf_load_stackoverflow)
GB (1) GB1303944A (enrdf_load_stackoverflow)
NL (1) NL7104547A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
FR2090608A5 (enrdf_load_stackoverflow) 1972-01-14
DE2020182C3 (de) 1974-05-02
DK138257B (da) 1978-08-07
DK138257C (da) 1979-01-22
BE766213A (fr) 1971-10-25
DE2020182B2 (de) 1973-09-20
DE2020182A1 (de) 1971-11-11
NL7104547A (enrdf_load_stackoverflow) 1971-10-26

Similar Documents

Publication Publication Date Title
US2957789A (en) Semiconductor devices and methods of preparing the same
GB692250A (en) Methods of making semiconductive bodies
GB1025984A (en) The production of a silicon body with a pn-junction in it
GB927991A (en) Improvements in or relating to the production of semi-conductor arrangements
GB1456294A (en) Method of producing defectless epitaxial layer of ga-lium phosphide
GB1452637A (en) Diffusion of impurities into a semiconductor
NL279828A (enrdf_load_stackoverflow)
GB1303944A (enrdf_load_stackoverflow)
GB983004A (en) Improvements in and relating to methods of thermal treatment of semiconductor material
GB1206468A (en) Method of manufacturing silicon nitride powder
GB1281298A (en) IMPROVEMENTS IN OR RELATING TO THE PRODUCTION OF A PROTECTIVE LAYER OF SiO2 ON THE SURFACE OF SEMICONDUCTOR PLATES
GB1006803A (en) Improvements in or relating to semiconductor devices
GB1282363A (en) Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor material
GB1037766A (en) Improvements relating to gallium arsenide crystals
GB1212366A (en) Improvements in doping semi-conductor bodies
GB894739A (en) Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting
GB789931A (en) Improvements in devices comprising semi-conductors
GB1324473A (en) Production of n-doped semiconductor material
GB1375132A (enrdf_load_stackoverflow)
GB968590A (en) Process for the manufacture of very pure crystalline carbides, nitrides or borides
GB1312884A (en) Zone refining process
GB1038818A (en) A process for the thermal treatment of monocrystalline semiconductor material
GB1107068A (en) Controllable semiconductor rectifier element
GB1406760A (en) Depositing semiconductor material
GB1006034A (en) A method of producing a rod of semi-conductor material

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees