DE20150280T1 - Nanostrukturierte geräte - Google Patents

Nanostrukturierte geräte Download PDF

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Publication number
DE20150280T1
DE20150280T1 DE20150280.4T DE20150280T DE20150280T1 DE 20150280 T1 DE20150280 T1 DE 20150280T1 DE 20150280 T DE20150280 T DE 20150280T DE 20150280 T1 DE20150280 T1 DE 20150280T1
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Prior art keywords
nanostructures
bulk region
dopant
dopants
electrical contacts
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Pending
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DE20150280.4T
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English (en)
Inventor
Brent A Buchine
Faris Modawar
Marcie R Black
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Advanced Silicon Group Tech LLC
Advanced Silicon Group Technologies LLC
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Advanced Silicon Group Tech LLC
Advanced Silicon Group Technologies LLC
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=42170599&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE20150280(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Silicon Group Tech LLC, Advanced Silicon Group Technologies LLC filed Critical Advanced Silicon Group Tech LLC
Publication of DE20150280T1 publication Critical patent/DE20150280T1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Abstract

Photovoltaische Vorrichtung, umfassend mindestens zwei elektrische Kontakte, p-Dotierstoffe und n-Dotierstoffe, weiter umfassend eine Bulk-Region und eine Region mit Nanostrukturen, die die Bulk-Region kontaktieren, wobei alle Nanostrukturen eine vorherrschende Art von Dotierstoff, n oder p, aufweisen und mindestens ein Abschnitt der Bulk-Region außerdem diese vorherrschende Art von Dotierstoff umfasst, dadurch gekennzeichnet, dass sich einer der elektrischen Kontakte zu dem Bereich erstreckt, in dem die Nanostrukturen die Bulk-Region kontaktieren.

Claims (15)

  1. Photovoltaische Vorrichtung, umfassend mindestens zwei elektrische Kontakte, p-Dotierstoffe und n-Dotierstoffe, weiter umfassend eine Bulk-Region und eine Region mit Nanostrukturen, die die Bulk-Region kontaktieren, wobei alle Nanostrukturen eine vorherrschende Art von Dotierstoff, n oder p, aufweisen und mindestens ein Abschnitt der Bulk-Region außerdem diese vorherrschende Art von Dotierstoff umfasst, dadurch gekennzeichnet, dass sich einer der elektrischen Kontakte zu dem Bereich erstreckt, in dem die Nanostrukturen die Bulk-Region kontaktieren.
  2. Vorrichtung nach Anspruch 1, wobei die Nanostrukturen einen Durchmesser von nicht mehr als etwa 200 nm aufweisen.
  3. Vorrichtung nach Anspruch 1, wobei die Nanostrukturen und die Bulk-Region Silizium umfassen.
  4. Vorrichtung nach Anspruch 3, wobei die Bulk-Region kristallines Silizium umfasst.
  5. Vorrichtung nach Anspruch 4, wobei die Oberfläche des kristallinen Siliziums entlang einer Kristallebene in einer anderen Orientierung als (100) liegt.
  6. Vorrichtung nach Anspruch 1, wobei der Übergang zwischen den n- und den p-Regionen mindestens etwa 0,75 µm unter der Basis der Nanostrukturen stattfindet.
  7. Vorrichtung nach Anspruch 1, weiter umfassend Metallpartikel in der Nähe des Bereichs, in dem die Nanostrukturen die Bulk-Region kontaktieren.
  8. Vorrichtung nach Anspruch 1, wobei die Vorrichtung mittels eines Prozesses hergestellt wird, der metallverstärktes Ätzen in einer HF und ein Oxidationsmittel umfassenden Lösung umfasst.
  9. Vorrichtung nach Anspruch 1, wobei eine Höhe der Nanostrukturen zwischen 0,1 µm und 2,5 µm beträgt.
  10. Vorrichtung nach Anspruch 1, die eine Sperrschichttiefe von mindestens etwa 30 nm von der Unterseite der Nanostrukturen aufweist.
  11. Vorrichtung nach Anspruch 1, die eine Sperrschichttiefe von mindestens etwa 300 nm von der Unterseite der Nanostrukturen aufweist.
  12. Vorrichtung nach Anspruch 1, die eine Sperrschichttiefe von mindestens etwa 300 nm von der Unterseite aller Nanostrukturen aufweist.
  13. Verfahren zum Herstellen einer Solarzelle, umfassend folgende Schritte: (a) Reinigen einer Oberfläche eines Siliziumsubstrats, (b) Abscheiden von Nanopartikeln auf der gereinigten Oberfläche und dann Metall zuoberst auf den Nanopartikeln, (c) Platzieren des Substrats in eine HF und ein Oxidationsmittel umfassende Ätzlösung, (d) Einbringen von einem oder mehreren Dotierstoffen, wobei das Ätzen und das Einbringen von Dotierstoffen zu Nanostrukturen führen, die eine vorherrschende Art von Dotierstoff, n oder p, aufweisen, und mindestens ein Abschnitt des Substrats außerdem diese vorherrschende Art von Dotierstoff umfasst, und (e) Herstellen von elektrischen Kontakten zu den Nanostrukturen, dadurch gekennzeichnet, dass sich einer der elektrischen Kontakte zu einem Bereich erstreckt, in dem die Nanostrukturen den Abschnitt des Substrats kontaktieren.
  14. Verfahren nach Anspruch 13, wobei in Schritt (b) ein Teil der gereinigten Oberfläche ohne abgeschiedene Nanopartikel gelassen wird.
  15. Verfahren nach Anspruch 13, wobei der Einbringschritt (d) Ionenimplantation optional gefolgt von Glühen umfasst.
DE20150280.4T 2008-11-14 2009-11-16 Nanostrukturierte geräte Pending DE20150280T1 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US250418P 2000-12-01
US11489608P 2008-11-14 2008-11-14
US114896P 2008-11-14
US15738609P 2009-03-04 2009-03-04
US157386P 2009-03-04
US25041809P 2009-10-09 2009-10-09
EP20150280.4A EP3664158A1 (de) 2008-11-14 2009-11-16 Nanostrukturierte geräte

Publications (1)

Publication Number Publication Date
DE20150280T1 true DE20150280T1 (de) 2021-04-15

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ID=42170599

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DE20150280.4T Pending DE20150280T1 (de) 2008-11-14 2009-11-16 Nanostrukturierte geräte

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US (4) US8450599B2 (de)
EP (2) EP3664158A1 (de)
JP (1) JP5612591B2 (de)
KR (1) KR20110098910A (de)
CN (1) CN102282679B (de)
AU (1) AU2009314576B2 (de)
CA (1) CA2743743A1 (de)
DE (1) DE20150280T1 (de)
ES (2) ES2810301T1 (de)
IL (1) IL212825A0 (de)
PT (1) PT2351100T (de)
WO (1) WO2010056352A2 (de)

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Publication number Publication date
WO2010056352A3 (en) 2010-08-05
PT2351100T (pt) 2020-04-21
AU2009314576B2 (en) 2015-05-14
EP2351100A4 (de) 2016-05-11
ES2774714T3 (es) 2020-07-22
JP5612591B2 (ja) 2014-10-22
EP3664158A1 (de) 2020-06-10
AU2009314576A1 (en) 2010-05-20
US20180323321A1 (en) 2018-11-08
CA2743743A1 (en) 2010-05-20
KR20110098910A (ko) 2011-09-02
EP2351100B1 (de) 2020-01-08
ES2810301T1 (es) 2021-03-08
IL212825A0 (en) 2011-07-31
WO2010056352A2 (en) 2010-05-20
US20220223750A1 (en) 2022-07-14
EP2351100A2 (de) 2011-08-03
CN102282679A (zh) 2011-12-14
CN102282679B (zh) 2015-05-20
US8450599B2 (en) 2013-05-28
US20100122725A1 (en) 2010-05-20
US20130247966A1 (en) 2013-09-26
JP2012508979A (ja) 2012-04-12

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