JP5612591B2 - ナノ構造デバイス - Google Patents
ナノ構造デバイス Download PDFInfo
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- JP5612591B2 JP5612591B2 JP2011536332A JP2011536332A JP5612591B2 JP 5612591 B2 JP5612591 B2 JP 5612591B2 JP 2011536332 A JP2011536332 A JP 2011536332A JP 2011536332 A JP2011536332 A JP 2011536332A JP 5612591 B2 JP5612591 B2 JP 5612591B2
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- nanowire
- substrate
- nanowires
- thin film
- region
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- 239000010703 silicon Substances 0.000 claims description 39
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- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 2
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- 230000003287 optical effect Effects 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
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- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 description 2
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- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
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- H01L31/0236—Special surface textures
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Description
本願は、米国仮特許出願第61/114,896号(2008年11月14日出願)、第61/157,386号(2009年3月4日出願)、および第61/250,418号(2009年10月9日出願)に基づく優先権を主張する。これらの出願は、その全体が参照により本明細書に引用される。
例えば、本発明は以下の項目を提供する。
(項目1)
少なくとも2つの電気接点と、p型ドーパントと、n型ドーパントとを備えている、光起電力デバイスであって、
バルク領域と、
該バルク領域に接触する整列配列のナノワイヤとをさらに備え、
該配列内の全てのナノワイヤは、nまたはpの1つの主要な型を有し、該バルク領域の少なくとも一部も、その主要な型のドーパントを備え、該バルクデバイスの表面は、実質的に平面に沿って位置し、該ナノワイヤは、その平面に垂直に整列されている、
デバイス。
(項目2)
前記配列のナノワイヤは、自由キャリア吸収を抑制するのに十分小さい平均直径を有する、項目1に記載のデバイス。
(項目3)
前記ナノワイヤは、直径が約200nm以下である、項目1に記載のデバイス。
(項目4)
前記ナノワイヤおよび前記バルク領域は、シリコンを含む、項目1に記載のデバイス。
(項目5)
前記バルク領域は、結晶シリコンを含む項目4に記載のデバイス。
(項目6)
前記結晶シリコン表面は、<100>以外の配向における結晶平面に沿って位置する、項目5に記載のデバイス。
(項目7)
前記n領域と前記p領域との間の遷移は、ナノワイヤのベースより下の少なくとも約1μmで発生する、項目1に記載のデバイス。
(項目8)
前記n領域と前記p領域との間の遷移は、ナノワイヤのベースより下の少なくとも約0.75μmで発生する、項目1に記載のデバイス。
(項目9)
前記ナノワイヤが前記バルク領域に接触する場所に近接して金属粒子をさらに含む、項目1に記載のデバイス。
(項目10)
前記デバイスは、HFおよび酸化剤を含む溶液中の金属強化エッチングを含む工程によって加工される、項目1に記載のデバイス。
(項目11)
前記電気接点のうちの1つは、前記ナノワイヤが前記バルク領域に接触する場所まで延在する、項目1に記載のデバイス。
(項目12)
(a)シリコン基板の表面を洗浄するステップと、
(b)1つ以上のドーパントを導入するステップと、
(c)該洗浄された表面上にナノ粒子を堆積し、次いで、該ナノ粒子の上部に金属を堆積するステップと、
(d)HFおよび酸化剤を含むエッチング溶液中に該基板を入れるステップと
を含む、太陽電池を加工する方法であって、
該エッチングおよびドーパントを導入するステップは、nまたはpの1つの主要な型のドーパントを有するナノワイヤをもたらし、該基板の少なくとも一部分も、その主要な型のドーパントを含む、方法。
(項目13)
前記ステップ(c)において堆積させられる前記ナノ粒子は、コロイド懸濁液中に入れられる、項目12に記載の方法。
(項目14)
前記ステップ(c)において、前記洗浄された表面のうちの一部は、堆積させられたナノ粒子がないままである、項目12に記載の方法。
(項目15)
前記導入するステップ(b)は、スピンオンドーパントを使用するステップを含む、項目11に記載の方法。
(項目16)
前記導入するステップ(b)は、随意的にアニーリングが続くイオン注入を含む、項目11に記載の方法。
(項目17)
前記シリコン基板を、支持材として使用される絶縁体に結合するステップをさらに含む、項目11に記載の方法。
(項目18)
前記堆積させられた金属は、前記ナノワイヤに隣接した基板域を少なくとも部分的に覆う薄膜を形成する、項目11に記載の方法。
(項目19)
前記ナノ粒子は官能化される、項目11に記載の方法。
(項目20)
前記ナノ粒子は、C10−C20ヒドロカルビル酸、またはそのような酸の混合物を用いて官能化される、項目19に記載の方法。
(項目21)
前記堆積させられた金属の厚さは、約10nmから約150nmの間である、項目11に記載の方法。
(項目22)
前記堆積させられた金属の厚さは、約20nmから約60nmの間である、項目11に記載の方法。
(項目23)
2つ以上の接点と、
基板を部分的に覆うナノ構造と、
該ナノ構造によって覆われていないが該ナノ構造内にある該基板の一部分を覆う薄膜と
を備え、
該薄膜は、該デバイスの接点として機能する、デバイス。
(項目24)
前記ナノ構造は、ナノワイヤ配列を備え、前記薄膜は、該配列のナノワイヤに隣接した前記基板域を少なくとも部分的に覆う、項目23に記載のデバイス。
(項目25)
前記デバイスは、光起電力電池または発光ダイオードとして動作する、項目23に記載のデバイス。
(項目26)
前記薄膜は、連続的である、項目23に記載のデバイス。
(項目27)
前記薄膜は、前記ナノ構造の上部より少なくとも約50nm下である、項目23に記載のデバイス。
(項目28)
前記薄膜は、前記ナノ構造の上部より少なくとも約100nm下である、項目27に記載のデバイス。
(項目29)
前記薄膜は、前記ナノ構造の上部より少なくとも約200nm下である、項目28に記載のデバイス。
(項目30)
前記薄膜は、金属を含む、項目23に記載のデバイス。
(項目31)
前記薄膜は、多孔質銀を含む、項目30に記載のデバイス。
また、本明細書で使用される用語は、特定の実施形態を説明する目的のためだけであり、制限することを目的としない。
本発明の局面において、光起電力デバイスを提供する。それは、少なくとも2つの電気接点と、p型ドーパントと、n型ドーパントとを備える。それはまた、バルク領域と、バルク領域に接触する、整列配列のナノワイヤとを備える。配列内の全てのナノワイヤは、nまたはpの1つの主要な型のドーパントを有し、バルク領域の少なくとも一部も、その主要な型のドーパントを備える。主要な型のドーパントを備えるバルク領域の一部は、典型的に、ナノワイヤ配列に接触する。次いで、光起電力デバイスのp−n接合部は、バルク領域で見出されるであろう。光起電力デバイスは、一般的にシリコンを含むであろう。
本発明の太陽電池を作製するための例示的工程は以下のようになる。
埋没接点を備える光起電力電池を作製するための工程は、以下のステップを含み得る。
Claims (32)
- 少なくとも2つの電気接点と、p型ドーパントと、n型ドーパントと、第1のバルク領域と第2のバルク領域との界面における単一のp−n接合部とを備えている光起電力デバイスであって、
該デバイスは、該第1のバルク領域に触れる整列配列のナノワイヤをさらに備え、
該配列内の全てのナノワイヤは、nまたはpの1つの主要な型を有し、該第1のバルク領域の少なくとも一部も、その主要な型のドーパントを備え、該バルクデバイスの表面は、実質的に平面に沿って位置し、該ナノワイヤは、その平面に垂直に整列されている、デバイス。 - 前記配列のナノワイヤは、自由キャリア吸収を抑制するのに十分小さい平均直径を有する、請求項1に記載のデバイス。
- 前記ナノワイヤは、直径が約200nm以下である、請求項1に記載のデバイス。
- 前記ナノワイヤおよび前記バルク領域は、シリコンを含む、請求項1に記載のデバイス。
- 前記バルク領域は、結晶シリコンを含む請求項4に記載のデバイス。
- 前記結晶シリコン表面は、<100>以外の配向における結晶平面に沿って位置する、請求項5に記載のデバイス。
- 前記n領域と前記p領域との間の遷移は、ナノワイヤのベースより下の少なくとも約1μmで発生する、請求項1に記載のデバイス。
- 前記n領域と前記p領域との間の遷移は、ナノワイヤのベースより下の少なくとも約0.75μmで発生する、請求項1に記載のデバイス。
- 前記ナノワイヤが前記バルク領域に接触する場所に近接して金属粒子をさらに含む、請求項1に記載のデバイス。
- 前記デバイスは、HFおよび酸化剤を含む溶液中の金属強化エッチングを含む工程によって製造される、請求項1に記載のデバイス。
- 前記電気接点のうちの1つは、前記ナノワイヤが前記バルク領域に接触する場所まで延在する、請求項1に記載のデバイス。
- 単一のp−n接合部を有する太陽電池を製造する方法であって、該方法は、
(a)シリコン基板の表面を洗浄するステップと、
(b)1つ以上のドーパントを導入するステップと、
(c)該洗浄された表面上にナノ粒子を堆積し、次いで、該ナノ粒子の上部に金属を堆積するステップと、
(d)HFおよび酸化剤を含むエッチング溶液中に該基板を入れるステップと
を含み、
該エッチングおよびドーパントを導入するステップは、nまたはpの1つの主要な型のドーパントを有するナノワイヤをもたらし、該ナノワイヤに隣接する該基板の少なくとも一部分も、その主要な型のドーパントを含み、該p−n接合部は、該基板の該一部分と該基板の第2の一部分との界面にある、方法。 - 前記ステップ(c)において堆積させられる前記ナノ粒子は、コロイド懸濁液中に入れられる、請求項12に記載の方法。
- 前記ステップ(c)において、前記洗浄された表面のうちの一部は、堆積させられたナノ粒子がないままである、請求項12に記載の方法。
- 前記導入するステップ(b)は、スピンオンドーパントを使用するステップを含む、請求項12に記載の方法。
- 前記導入するステップ(b)は、随意的にアニーリングが続くイオン注入を含む、請求項12に記載の方法。
- 前記シリコン基板を、支持材として使用される絶縁体に結合するステップをさらに含む、請求項12に記載の方法。
- 前記堆積させられた金属は、前記ナノワイヤに隣接した基板域を少なくとも部分的に覆う薄膜を形成する、請求項12に記載の方法。
- 前記ナノ粒子は官能化される、請求項12に記載の方法。
- 前記ナノ粒子は、C10−C20ヒドロカルビル酸、またはそのような酸の混合物を用いて官能化される、請求項19に記載の方法。
- 前記堆積させられた金属の厚さは、約10nmから約150nmの間である、請求項12に記載の方法。
- 前記堆積させられた金属の厚さは、約20nmから約60nmの間である、請求項12に記載の方法。
- 2つ以上の電気接点と、
基板を部分的に覆うナノ構造と、
該ナノ構造によって覆われていないが該ナノ構造内にある該基板の一部分を覆う薄膜と
を備え、
該薄膜は、該デバイスの電気接点として機能する、デバイス。 - 前記ナノ構造は、ナノワイヤ配列を備え、前記薄膜は、該配列のナノワイヤに隣接した前記基板域を少なくとも部分的に覆う、請求項23に記載のデバイス。
- 前記デバイスは、光起電力電池または発光ダイオードとして動作する、請求項23に記載のデバイス。
- 前記薄膜は、連続的である、請求項23に記載のデバイス。
- 前記薄膜は、前記ナノ構造の上部より少なくとも約50nm下である、請求項23に記載のデバイス。
- 前記薄膜は、前記ナノ構造の上部より少なくとも約100nm下である、請求項27に記載のデバイス。
- 前記薄膜は、前記ナノ構造の上部より少なくとも約200nm下である、請求項28に記載のデバイス。
- 前記薄膜は、金属を含む、請求項23に記載のデバイス。
- 前記薄膜は、多孔質銀を含む、請求項30に記載のデバイス。
- 前記単一のp−n接合部は、前記ナノワイヤの底部から少なくとも約30nmに配置されている、請求項1に記載のデバイス。
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PCT/US2009/006119 WO2010056352A2 (en) | 2008-11-14 | 2009-11-16 | Nanostructured devices |
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2009
- 2009-11-16 US US12/619,092 patent/US8450599B2/en active Active
- 2009-11-16 KR KR1020117013501A patent/KR20110098910A/ko not_active Application Discontinuation
- 2009-11-16 CN CN200980154592.XA patent/CN102282679B/zh active Active
- 2009-11-16 DE DE20150280.4T patent/DE20150280T1/de active Pending
- 2009-11-16 PT PT98264443T patent/PT2351100T/pt unknown
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- 2009-11-16 WO PCT/US2009/006119 patent/WO2010056352A2/en active Application Filing
- 2009-11-16 ES ES20150280T patent/ES2810301T1/es active Pending
- 2009-11-16 JP JP2011536332A patent/JP5612591B2/ja active Active
- 2009-11-16 ES ES09826444T patent/ES2774714T3/es active Active
- 2009-11-16 AU AU2009314576A patent/AU2009314576B2/en not_active Ceased
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Also Published As
Publication number | Publication date |
---|---|
CN102282679A (zh) | 2011-12-14 |
KR20110098910A (ko) | 2011-09-02 |
US20100122725A1 (en) | 2010-05-20 |
US20220223750A1 (en) | 2022-07-14 |
IL212825A0 (en) | 2011-07-31 |
DE20150280T1 (de) | 2021-04-15 |
AU2009314576A1 (en) | 2010-05-20 |
EP3664158A1 (en) | 2020-06-10 |
US20130247966A1 (en) | 2013-09-26 |
PT2351100T (pt) | 2020-04-21 |
JP2012508979A (ja) | 2012-04-12 |
EP2351100B1 (en) | 2020-01-08 |
US8450599B2 (en) | 2013-05-28 |
CA2743743A1 (en) | 2010-05-20 |
WO2010056352A3 (en) | 2010-08-05 |
CN102282679B (zh) | 2015-05-20 |
US20180323321A1 (en) | 2018-11-08 |
ES2810301T1 (es) | 2021-03-08 |
WO2010056352A2 (en) | 2010-05-20 |
ES2774714T3 (es) | 2020-07-22 |
EP2351100A4 (en) | 2016-05-11 |
AU2009314576B2 (en) | 2015-05-14 |
EP2351100A2 (en) | 2011-08-03 |
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