DE2009359C3 - Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial - Google Patents

Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial

Info

Publication number
DE2009359C3
DE2009359C3 DE2009359A DE2009359A DE2009359C3 DE 2009359 C3 DE2009359 C3 DE 2009359C3 DE 2009359 A DE2009359 A DE 2009359A DE 2009359 A DE2009359 A DE 2009359A DE 2009359 C3 DE2009359 C3 DE 2009359C3
Authority
DE
Germany
Prior art keywords
ampoule
stopper
openings
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2009359A
Other languages
German (de)
English (en)
Other versions
DE2009359A1 (de
DE2009359B2 (de
Inventor
Helga 8551 Pretzfeld Kursawe
Karl Dipl.-Phys.Dr.Rer.Nat. 8000 Muenchen Platzoeder
Konrad Dipl.-Chem.Dr. Phil.Nat. 8011 Vaterstetten Reuschel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2009359A priority Critical patent/DE2009359C3/de
Priority to JP45061802A priority patent/JPS4827493B1/ja
Priority to AT750670A priority patent/AT307510B/de
Priority to SE11319/70A priority patent/SE354015B/xx
Priority to CH1250370A priority patent/CH540717A/de
Priority to NL7012804A priority patent/NL7012804A/xx
Priority to CS6018A priority patent/CS148100B2/cs
Priority to GB1258226D priority patent/GB1258226A/en
Priority to CA094,452A priority patent/CA942640A/en
Priority to US108724A priority patent/US3698354A/en
Priority to FR7106044A priority patent/FR2078934A5/fr
Publication of DE2009359A1 publication Critical patent/DE2009359A1/de
Publication of DE2009359B2 publication Critical patent/DE2009359B2/de
Application granted granted Critical
Publication of DE2009359C3 publication Critical patent/DE2009359C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE2009359A 1970-02-27 1970-02-27 Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial Expired DE2009359C3 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE2009359A DE2009359C3 (de) 1970-02-27 1970-02-27 Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial
JP45061802A JPS4827493B1 (enExample) 1970-02-27 1970-07-16
AT750670A AT307510B (de) 1970-02-27 1970-08-19 Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial
SE11319/70A SE354015B (enExample) 1970-02-27 1970-08-19
CH1250370A CH540717A (de) 1970-02-27 1970-08-20 Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial
NL7012804A NL7012804A (enExample) 1970-02-27 1970-08-28
CS6018A CS148100B2 (enExample) 1970-02-27 1970-09-02
GB1258226D GB1258226A (enExample) 1970-02-27 1970-09-02
CA094,452A CA942640A (en) 1970-02-27 1970-09-30 Apparatus for diffusing doping substances into semiconductor material
US108724A US3698354A (en) 1970-02-27 1971-01-22 Device for indiffusing dopants into a semiconductor material
FR7106044A FR2078934A5 (enExample) 1970-02-27 1971-02-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2009359A DE2009359C3 (de) 1970-02-27 1970-02-27 Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial

Publications (3)

Publication Number Publication Date
DE2009359A1 DE2009359A1 (de) 1971-09-09
DE2009359B2 DE2009359B2 (de) 1973-09-20
DE2009359C3 true DE2009359C3 (de) 1974-05-02

Family

ID=5763603

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2009359A Expired DE2009359C3 (de) 1970-02-27 1970-02-27 Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial

Country Status (11)

Country Link
US (1) US3698354A (enExample)
JP (1) JPS4827493B1 (enExample)
AT (1) AT307510B (enExample)
CA (1) CA942640A (enExample)
CH (1) CH540717A (enExample)
CS (1) CS148100B2 (enExample)
DE (1) DE2009359C3 (enExample)
FR (1) FR2078934A5 (enExample)
GB (1) GB1258226A (enExample)
NL (1) NL7012804A (enExample)
SE (1) SE354015B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5076837U (enExample) * 1973-11-15 1975-07-04
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
JPS5923464B2 (ja) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 半導体熱処理装置
US4804633A (en) * 1988-02-18 1989-02-14 Northern Telecom Limited Silicon-on-insulator substrates annealed in polysilicon tube
GB9324002D0 (en) * 1993-11-22 1994-01-12 Electrotech Ltd Processing system

Also Published As

Publication number Publication date
CA942640A (en) 1974-02-26
SE354015B (enExample) 1973-02-26
DE2009359A1 (de) 1971-09-09
FR2078934A5 (enExample) 1971-11-05
CH540717A (de) 1973-08-31
US3698354A (en) 1972-10-17
GB1258226A (enExample) 1971-12-22
DE2009359B2 (de) 1973-09-20
CS148100B2 (enExample) 1973-02-22
NL7012804A (enExample) 1971-08-31
AT307510B (de) 1973-05-25
JPS4827493B1 (enExample) 1973-08-23

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee