CS148100B2 - - Google Patents

Info

Publication number
CS148100B2
CS148100B2 CS6018A CS601870A CS148100B2 CS 148100 B2 CS148100 B2 CS 148100B2 CS 6018 A CS6018 A CS 6018A CS 601870 A CS601870 A CS 601870A CS 148100 B2 CS148100 B2 CS 148100B2
Authority
CS
Czechoslovakia
Application number
CS6018A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of CS148100B2 publication Critical patent/CS148100B2/cs

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
CS6018A 1970-02-27 1970-09-02 CS148100B2 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2009359A DE2009359C3 (de) 1970-02-27 1970-02-27 Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial

Publications (1)

Publication Number Publication Date
CS148100B2 true CS148100B2 (cs) 1973-02-22

Family

ID=5763603

Family Applications (1)

Application Number Title Priority Date Filing Date
CS6018A CS148100B2 (cs) 1970-02-27 1970-09-02

Country Status (11)

Country Link
US (1) US3698354A (cs)
JP (1) JPS4827493B1 (cs)
AT (1) AT307510B (cs)
CA (1) CA942640A (cs)
CH (1) CH540717A (cs)
CS (1) CS148100B2 (cs)
DE (1) DE2009359C3 (cs)
FR (1) FR2078934A5 (cs)
GB (1) GB1258226A (cs)
NL (1) NL7012804A (cs)
SE (1) SE354015B (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5076837U (cs) * 1973-11-15 1975-07-04
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
JPS5923464B2 (ja) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 半導体熱処理装置
US4804633A (en) * 1988-02-18 1989-02-14 Northern Telecom Limited Silicon-on-insulator substrates annealed in polysilicon tube
GB9324002D0 (en) * 1993-11-22 1994-01-12 Electrotech Ltd Processing system

Also Published As

Publication number Publication date
AT307510B (de) 1973-05-25
CA942640A (en) 1974-02-26
JPS4827493B1 (cs) 1973-08-23
CH540717A (de) 1973-08-31
GB1258226A (cs) 1971-12-22
NL7012804A (cs) 1971-08-31
DE2009359A1 (de) 1971-09-09
US3698354A (en) 1972-10-17
DE2009359B2 (de) 1973-09-20
DE2009359C3 (de) 1974-05-02
SE354015B (cs) 1973-02-26
FR2078934A5 (cs) 1971-11-05

Similar Documents

Publication Publication Date Title
AR204384A1 (cs)
CS149456B2 (cs)
FR2078934A5 (cs)
ATA96471A (cs)
AU2044470A (cs)
AU1146470A (cs)
AU2017870A (cs)
AU2085370A (cs)
AU2130570A (cs)
AR195465A1 (cs)
AU2115870A (cs)
ATA672271A (cs)
AU1086670A (cs)
AU1879170A (cs)
AU1881070A (cs)
AU1918570A (cs)
AU1943370A (cs)
AU1969370A (cs)
AU1974970A (cs)
AU1189670A (cs)
AU1277070A (cs)
AU1235770A (cs)
AU1083170A (cs)
AU2061170A (cs)
AU1004470A (cs)