SE354015B - - Google Patents

Info

Publication number
SE354015B
SE354015B SE11319/70A SE1131970A SE354015B SE 354015 B SE354015 B SE 354015B SE 11319/70 A SE11319/70 A SE 11319/70A SE 1131970 A SE1131970 A SE 1131970A SE 354015 B SE354015 B SE 354015B
Authority
SE
Sweden
Application number
SE11319/70A
Inventor
K Reuschel
K Platzoeder
H Kursawe
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE354015B publication Critical patent/SE354015B/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165Diffusion sources
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10Reaction chambers; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00Coating apparatus
    • Y10S118/90Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
SE11319/70A 1970-02-27 1970-08-19 SE354015B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2009359A DE2009359C3 (de) 1970-02-27 1970-02-27 Anordnung zum Eindiffundieren von Dotierstoffen in ein Halbleitermaterial

Publications (1)

Publication Number Publication Date
SE354015B true SE354015B (xx) 1973-02-26

Family

ID=5763603

Family Applications (1)

Application Number Title Priority Date Filing Date
SE11319/70A SE354015B (xx) 1970-02-27 1970-08-19

Country Status (11)

Country Link
US (1) US3698354A (xx)
JP (1) JPS4827493B1 (xx)
AT (1) AT307510B (xx)
CA (1) CA942640A (xx)
CH (1) CH540717A (xx)
CS (1) CS148100B2 (xx)
DE (1) DE2009359C3 (xx)
FR (1) FR2078934A5 (xx)
GB (1) GB1258226A (xx)
NL (1) NL7012804A (xx)
SE (1) SE354015B (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5076837U (xx) * 1973-11-15 1975-07-04
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
JPS5923464B2 (ja) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 半導体熱処理装置
US4804633A (en) * 1988-02-18 1989-02-14 Northern Telecom Limited Silicon-on-insulator substrates annealed in polysilicon tube
GB9324002D0 (en) * 1993-11-22 1994-01-12 Electrotech Ltd Processing system

Also Published As

Publication number Publication date
DE2009359A1 (de) 1971-09-09
DE2009359C3 (de) 1974-05-02
FR2078934A5 (xx) 1971-11-05
JPS4827493B1 (xx) 1973-08-23
DE2009359B2 (de) 1973-09-20
NL7012804A (xx) 1971-08-31
CA942640A (en) 1974-02-26
CH540717A (de) 1973-08-31
AT307510B (de) 1973-05-25
US3698354A (en) 1972-10-17
GB1258226A (xx) 1971-12-22
CS148100B2 (xx) 1973-02-22

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