DE2003558A1 - Feldeffekttransistor - Google Patents
FeldeffekttransistorInfo
- Publication number
- DE2003558A1 DE2003558A1 DE19702003558 DE2003558A DE2003558A1 DE 2003558 A1 DE2003558 A1 DE 2003558A1 DE 19702003558 DE19702003558 DE 19702003558 DE 2003558 A DE2003558 A DE 2003558A DE 2003558 A1 DE2003558 A1 DE 2003558A1
- Authority
- DE
- Germany
- Prior art keywords
- channel
- drain
- effect transistor
- field effect
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000251730 Chondrichthyes Species 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
- H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP526869 | 1969-01-27 | ||
| JP526969 | 1969-01-27 | ||
| JP9572269 | 1969-12-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2003558A1 true DE2003558A1 (de) | 1970-07-30 |
Family
ID=27276681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702003558 Pending DE2003558A1 (de) | 1969-01-27 | 1970-01-27 | Feldeffekttransistor |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2003558A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1301702A (enrdf_load_stackoverflow) |
| NL (1) | NL7001150A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4219835A (en) * | 1978-02-17 | 1980-08-26 | Siliconix, Inc. | VMOS Mesa structure and manufacturing process |
| GB2129216B (en) * | 1982-10-12 | 1985-12-18 | Secr Defence | Field effect transistors |
-
1970
- 1970-01-22 GB GB317970A patent/GB1301702A/en not_active Expired
- 1970-01-27 NL NL7001150A patent/NL7001150A/xx unknown
- 1970-01-27 DE DE19702003558 patent/DE2003558A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL7001150A (enrdf_load_stackoverflow) | 1970-07-29 |
| GB1301702A (enrdf_load_stackoverflow) | 1973-01-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 |