NL7001150A - - Google Patents

Info

Publication number
NL7001150A
NL7001150A NL7001150A NL7001150A NL7001150A NL 7001150 A NL7001150 A NL 7001150A NL 7001150 A NL7001150 A NL 7001150A NL 7001150 A NL7001150 A NL 7001150A NL 7001150 A NL7001150 A NL 7001150A
Authority
NL
Netherlands
Application number
NL7001150A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7001150A publication Critical patent/NL7001150A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
    • H10D30/668Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65Lateral DMOS [LDMOS] FETs
    • H10D30/658Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311Gate electrodes for field-effect devices
    • H10D64/411Gate electrodes for field-effect devices for FETs
    • H10D64/511Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
NL7001150A 1969-01-27 1970-01-27 NL7001150A (enrdf_load_stackoverflow)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP526869 1969-01-27
JP526969 1969-01-27
JP9572269 1969-12-01

Publications (1)

Publication Number Publication Date
NL7001150A true NL7001150A (enrdf_load_stackoverflow) 1970-07-29

Family

ID=27276681

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7001150A NL7001150A (enrdf_load_stackoverflow) 1969-01-27 1970-01-27

Country Status (3)

Country Link
DE (1) DE2003558A1 (enrdf_load_stackoverflow)
GB (1) GB1301702A (enrdf_load_stackoverflow)
NL (1) NL7001150A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process
GB2129216B (en) * 1982-10-12 1985-12-18 Secr Defence Field effect transistors

Also Published As

Publication number Publication date
DE2003558A1 (de) 1970-07-30
GB1301702A (enrdf_load_stackoverflow) 1973-01-04

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