GB1301702A - - Google Patents
Info
- Publication number
- GB1301702A GB1301702A GB317970A GB317970A GB1301702A GB 1301702 A GB1301702 A GB 1301702A GB 317970 A GB317970 A GB 317970A GB 317970 A GB317970 A GB 317970A GB 1301702 A GB1301702 A GB 1301702A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- recess
- etching
- film
- jan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
- H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP526869 | 1969-01-27 | ||
| JP526969 | 1969-01-27 | ||
| JP9572269 | 1969-12-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1301702A true GB1301702A (enrdf_load_stackoverflow) | 1973-01-04 |
Family
ID=27276681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB317970A Expired GB1301702A (enrdf_load_stackoverflow) | 1969-01-27 | 1970-01-22 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE2003558A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1301702A (enrdf_load_stackoverflow) |
| NL (1) | NL7001150A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2904769A1 (de) * | 1978-02-17 | 1979-08-23 | Siliconix Inc | Verfahren zum herstellen eines v-nut-mos-feldeffekttransistors und transistor dieses typs |
| GB2129216A (en) * | 1982-10-12 | 1984-05-10 | Secr Defence | Field effect transistors |
-
1970
- 1970-01-22 GB GB317970A patent/GB1301702A/en not_active Expired
- 1970-01-27 NL NL7001150A patent/NL7001150A/xx unknown
- 1970-01-27 DE DE19702003558 patent/DE2003558A1/de active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2904769A1 (de) * | 1978-02-17 | 1979-08-23 | Siliconix Inc | Verfahren zum herstellen eines v-nut-mos-feldeffekttransistors und transistor dieses typs |
| FR2417855A1 (fr) * | 1978-02-17 | 1979-09-14 | Siliconix Inc | Transistor a effet de champ et son procede de realisation |
| GB2129216A (en) * | 1982-10-12 | 1984-05-10 | Secr Defence | Field effect transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7001150A (enrdf_load_stackoverflow) | 1970-07-29 |
| DE2003558A1 (de) | 1970-07-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |