DE19625404B4 - Verfahren zur Herstellung einer Feldoxidschicht in einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Feldoxidschicht in einer Halbleitervorrichtung Download PDF

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Publication number
DE19625404B4
DE19625404B4 DE19625404A DE19625404A DE19625404B4 DE 19625404 B4 DE19625404 B4 DE 19625404B4 DE 19625404 A DE19625404 A DE 19625404A DE 19625404 A DE19625404 A DE 19625404A DE 19625404 B4 DE19625404 B4 DE 19625404B4
Authority
DE
Germany
Prior art keywords
oxide layer
silicon substrate
approximately
layer
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19625404A
Other languages
German (de)
English (en)
Other versions
DE19625404A1 (de
Inventor
Bog Kim Ichon Young
Sig Joo Ichon Moon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of DE19625404A1 publication Critical patent/DE19625404A1/de
Application granted granted Critical
Publication of DE19625404B4 publication Critical patent/DE19625404B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
DE19625404A 1995-06-28 1996-06-25 Verfahren zur Herstellung einer Feldoxidschicht in einer Halbleitervorrichtung Expired - Fee Related DE19625404B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019950017885A KR100190363B1 (ko) 1995-06-28 1995-06-28 반도체 소자의 소자분리 방법
KR95-17885 1995-06-28

Publications (2)

Publication Number Publication Date
DE19625404A1 DE19625404A1 (de) 1997-01-02
DE19625404B4 true DE19625404B4 (de) 2005-12-29

Family

ID=19418567

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19625404A Expired - Fee Related DE19625404B4 (de) 1995-06-28 1996-06-25 Verfahren zur Herstellung einer Feldoxidschicht in einer Halbleitervorrichtung

Country Status (6)

Country Link
JP (1) JPH0917780A (ko)
KR (1) KR100190363B1 (ko)
CN (1) CN1075666C (ko)
DE (1) DE19625404B4 (ko)
GB (1) GB2302758A (ko)
TW (1) TW297944B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19731203A1 (de) * 1997-07-21 1999-02-11 Siemens Ag CMOS-Schaltung und Verfahren zu ihrer Herstellung
KR100439107B1 (ko) * 1997-12-29 2004-07-16 주식회사 하이닉스반도체 반도체소자의 소자분리막 형성방법
CN104299984A (zh) * 2013-07-19 2015-01-21 北大方正集团有限公司 一种半导体器件及其制造方法
KR20160000007U (ko) 2014-06-24 2016-01-04 안숙희 유압 바이스용 받침블록
CN105390409B (zh) * 2014-09-04 2018-06-26 北大方正集团有限公司 鸟嘴长度的测试方法及装置
KR20190131343A (ko) 2018-05-16 2019-11-26 현대중공업 주식회사 선박
CN113838797B (zh) * 2021-11-26 2022-03-04 广州粤芯半导体技术有限公司 局部氧化物层的制备方法、半导体器件的制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075875A2 (en) * 1981-09-28 1983-04-06 General Electric Company Method of making integrated circuits comprising dielectric isolation regions
JPS61174737A (ja) * 1985-01-30 1986-08-06 Oki Electric Ind Co Ltd 半導体素子の製造方法
US4764248A (en) * 1987-04-13 1988-08-16 Cypress Semiconductor Corporation Rapid thermal nitridized oxide locos process
GB2238658A (en) * 1989-11-23 1991-06-05 Stc Plc Integrated circuits
US5382533A (en) * 1993-06-18 1995-01-17 Micron Semiconductor, Inc. Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection
JPH0730113A (ja) * 1993-07-09 1995-01-31 Sony Corp Ｍｏｓ型トランジスタの製造方法
US5399520A (en) * 1993-03-31 1995-03-21 Hyundai Electronics Industries Co., Ltd. Method for the formation of field oxide film in semiconductor device
DE4422957A1 (de) * 1993-10-25 1995-04-27 Samsung Electronics Co Ltd Isolierverfahren für eine Halbleitervorrichtung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256895A (en) * 1987-02-24 1993-10-26 Sgs-Thomson Microelectronics, Inc. Pad oxide protect sealed interface isolation
US5298451A (en) * 1991-04-30 1994-03-29 Texas Instruments Incorporated Recessed and sidewall-sealed poly-buffered LOCOS isolation methods

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075875A2 (en) * 1981-09-28 1983-04-06 General Electric Company Method of making integrated circuits comprising dielectric isolation regions
JPS61174737A (ja) * 1985-01-30 1986-08-06 Oki Electric Ind Co Ltd 半導体素子の製造方法
US4764248A (en) * 1987-04-13 1988-08-16 Cypress Semiconductor Corporation Rapid thermal nitridized oxide locos process
GB2238658A (en) * 1989-11-23 1991-06-05 Stc Plc Integrated circuits
US5399520A (en) * 1993-03-31 1995-03-21 Hyundai Electronics Industries Co., Ltd. Method for the formation of field oxide film in semiconductor device
US5382533A (en) * 1993-06-18 1995-01-17 Micron Semiconductor, Inc. Method of manufacturing small geometry MOS field-effect transistors having improved barrier layer to hot electron injection
JPH0730113A (ja) * 1993-07-09 1995-01-31 Sony Corp Ｍｏｓ型トランジスタの製造方法
DE4422957A1 (de) * 1993-10-25 1995-04-27 Samsung Electronics Co Ltd Isolierverfahren für eine Halbleitervorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHI-HUNG HUI,J., et al.: Sealed-Interface Local Oxidation Technology. In: IEEE Trans. on Electron Devices, Vol. ED-29, No. 4, April 1982, S. 554-561 *

Also Published As

Publication number Publication date
GB9612263D0 (en) 1996-08-14
TW297944B (ko) 1997-02-11
GB2302758A (en) 1997-01-29
DE19625404A1 (de) 1997-01-02
KR100190363B1 (ko) 1999-06-01
KR970003811A (ko) 1997-01-29
CN1075666C (zh) 2001-11-28
JPH0917780A (ja) 1997-01-17
CN1145532A (zh) 1997-03-19

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee