DE1909290A1 - Verfahren zum selektiven Maskieren,insbesondere zur Herstellung von Halbleiterbauelementen kleiner Abmessung - Google Patents
Verfahren zum selektiven Maskieren,insbesondere zur Herstellung von Halbleiterbauelementen kleiner AbmessungInfo
- Publication number
- DE1909290A1 DE1909290A1 DE19691909290 DE1909290A DE1909290A1 DE 1909290 A1 DE1909290 A1 DE 1909290A1 DE 19691909290 DE19691909290 DE 19691909290 DE 1909290 A DE1909290 A DE 1909290A DE 1909290 A1 DE1909290 A1 DE 1909290A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- nickel
- covered
- masking
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 40
- 230000000873 masking effect Effects 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052759 nickel Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 238000001556 precipitation Methods 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 238000007792 addition Methods 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 235000009161 Espostoa lanata Nutrition 0.000 description 1
- 240000001624 Espostoa lanata Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/871—Vertical FETs having Schottky gate electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH313168A CH471242A (de) | 1968-03-01 | 1968-03-01 | Verfahren zur selektiven Maskierung zu bearbeitender Flächen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1909290A1 true DE1909290A1 (de) | 1969-09-25 |
Family
ID=4249277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19691909290 Withdrawn DE1909290A1 (de) | 1968-03-01 | 1969-02-25 | Verfahren zum selektiven Maskieren,insbesondere zur Herstellung von Halbleiterbauelementen kleiner Abmessung |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4939550B1 (enrdf_load_stackoverflow) |
CH (1) | CH471242A (enrdf_load_stackoverflow) |
DE (1) | DE1909290A1 (enrdf_load_stackoverflow) |
FR (1) | FR1600775A (enrdf_load_stackoverflow) |
GB (1) | GB1261651A (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH484517A (de) * | 1968-06-28 | 1970-01-15 | Ibm | Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters |
FR2104704B1 (enrdf_load_stackoverflow) * | 1970-08-07 | 1973-11-23 | Thomson Csf | |
GB2127751B (en) * | 1982-10-06 | 1986-04-23 | Plessey Co Plc | Producing narrow features in electrical devices |
CN116936687B (zh) * | 2023-09-18 | 2023-12-15 | 金阳(泉州)新能源科技有限公司 | 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法 |
-
1968
- 1968-03-01 CH CH313168A patent/CH471242A/de not_active IP Right Cessation
- 1968-12-30 FR FR1600775D patent/FR1600775A/fr not_active Expired
-
1969
- 1969-02-21 JP JP44012675A patent/JPS4939550B1/ja active Pending
- 1969-02-25 DE DE19691909290 patent/DE1909290A1/de not_active Withdrawn
- 1969-03-03 GB GB01127/69A patent/GB1261651A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CH471242A (de) | 1969-04-15 |
JPS4939550B1 (enrdf_load_stackoverflow) | 1974-10-26 |
GB1261651A (en) | 1972-01-26 |
FR1600775A (enrdf_load_stackoverflow) | 1970-07-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |