CH471242A - Verfahren zur selektiven Maskierung zu bearbeitender Flächen - Google Patents
Verfahren zur selektiven Maskierung zu bearbeitender FlächenInfo
- Publication number
- CH471242A CH471242A CH313168A CH313168A CH471242A CH 471242 A CH471242 A CH 471242A CH 313168 A CH313168 A CH 313168A CH 313168 A CH313168 A CH 313168A CH 471242 A CH471242 A CH 471242A
- Authority
- CH
- Switzerland
- Prior art keywords
- processed
- selective masking
- masking
- selective
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/871—Vertical FETs having Schottky gate electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH313168A CH471242A (de) | 1968-03-01 | 1968-03-01 | Verfahren zur selektiven Maskierung zu bearbeitender Flächen |
FR1600775D FR1600775A (enrdf_load_stackoverflow) | 1968-03-01 | 1968-12-30 | |
JP44012675A JPS4939550B1 (enrdf_load_stackoverflow) | 1968-03-01 | 1969-02-21 | |
DE19691909290 DE1909290A1 (de) | 1968-03-01 | 1969-02-25 | Verfahren zum selektiven Maskieren,insbesondere zur Herstellung von Halbleiterbauelementen kleiner Abmessung |
GB01127/69A GB1261651A (en) | 1968-03-01 | 1969-03-03 | Method of making semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH313168A CH471242A (de) | 1968-03-01 | 1968-03-01 | Verfahren zur selektiven Maskierung zu bearbeitender Flächen |
Publications (1)
Publication Number | Publication Date |
---|---|
CH471242A true CH471242A (de) | 1969-04-15 |
Family
ID=4249277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH313168A CH471242A (de) | 1968-03-01 | 1968-03-01 | Verfahren zur selektiven Maskierung zu bearbeitender Flächen |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4939550B1 (enrdf_load_stackoverflow) |
CH (1) | CH471242A (enrdf_load_stackoverflow) |
DE (1) | DE1909290A1 (enrdf_load_stackoverflow) |
FR (1) | FR1600775A (enrdf_load_stackoverflow) |
GB (1) | GB1261651A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2012004A1 (enrdf_load_stackoverflow) * | 1968-06-28 | 1970-03-13 | Ibm | |
FR2104704A1 (enrdf_load_stackoverflow) * | 1970-08-07 | 1972-04-21 | Thomson Csf |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2127751B (en) * | 1982-10-06 | 1986-04-23 | Plessey Co Plc | Producing narrow features in electrical devices |
CN116936687B (zh) * | 2023-09-18 | 2023-12-15 | 金阳(泉州)新能源科技有限公司 | 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法 |
-
1968
- 1968-03-01 CH CH313168A patent/CH471242A/de not_active IP Right Cessation
- 1968-12-30 FR FR1600775D patent/FR1600775A/fr not_active Expired
-
1969
- 1969-02-21 JP JP44012675A patent/JPS4939550B1/ja active Pending
- 1969-02-25 DE DE19691909290 patent/DE1909290A1/de not_active Withdrawn
- 1969-03-03 GB GB01127/69A patent/GB1261651A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2012004A1 (enrdf_load_stackoverflow) * | 1968-06-28 | 1970-03-13 | Ibm | |
FR2012003A1 (enrdf_load_stackoverflow) * | 1968-06-28 | 1970-03-13 | Ibm | |
FR2104704A1 (enrdf_load_stackoverflow) * | 1970-08-07 | 1972-04-21 | Thomson Csf |
Also Published As
Publication number | Publication date |
---|---|
JPS4939550B1 (enrdf_load_stackoverflow) | 1974-10-26 |
DE1909290A1 (de) | 1969-09-25 |
GB1261651A (en) | 1972-01-26 |
FR1600775A (enrdf_load_stackoverflow) | 1970-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE1668993B2 (de) | Verfahren zur isolierung von alpha-glycolid | |
AT297220B (de) | Verfahren zur Isolierung von Cephalosporin C aus Lösungen | |
CH437331A (de) | Verfahren zur selektiven Extraktion von Alkaloiden | |
CH531756A (de) | Verfahren zur Interpolation | |
CH376858A (de) | Verfahren zur Messung des Ganges von Uhrwerken | |
CH361597A (de) | Verfahren zur Verschleierung von Nachrichtensignalen | |
AT311560B (de) | Verfahren zur Herstellung von 2-Thio-pyrimidin-nucleosiden | |
CH361839A (de) | Verfahren zur Verschleierung von Nachrichtensignalen | |
CH514395A (de) | Vorrichtung zur Halterung von zu bearbeitenden Gegenständen unterschiedlicher Grösse | |
AT291964B (de) | Verfahren zur Ammonoxydation von Olefinen zu Nitrilen | |
AT296479B (de) | Verfahren zur Isomerisierung aliphatischer Kohlenwasserstoffe | |
CH471242A (de) | Verfahren zur selektiven Maskierung zu bearbeitender Flächen | |
AT309837B (de) | Verfahren zur Aushärtung von Legierungen | |
CH526958A (de) | Verfahren zur Reinigung von Insulin | |
CH489096A (de) | Verfahren zur Konzentrierung radioaktiver Abfälle | |
CH522041A (de) | Verfahren zur Behandlung metallischer Oberflächen | |
AT295957B (de) | Verfahren zur Vorbehandlung von Flächen | |
CH397259A (de) | Verfahren zur Distanzmessung | |
CH545358A (de) | Verfahren zur Torsionskräuselung | |
AT294418B (de) | Verfahren zur herstellung von polyolefinen | |
DD69190A1 (de) | Verfahren zur Lüftung | |
CH545317A (de) | Verfahren zum Reinigen von Cephalexin | |
DE2026373B2 (de) | Verfahren zur herstellung biuretarmer harnstoffprills | |
CH492647A (de) | Verfahren zur Wasserreinigung | |
CH531478A (de) | Verfahren zur N-Acylierung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |