GB1261651A - Method of making semiconductor devices - Google Patents
Method of making semiconductor devicesInfo
- Publication number
- GB1261651A GB1261651A GB01127/69A GB1112769A GB1261651A GB 1261651 A GB1261651 A GB 1261651A GB 01127/69 A GB01127/69 A GB 01127/69A GB 1112769 A GB1112769 A GB 1112769A GB 1261651 A GB1261651 A GB 1261651A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- gold
- deposited
- chromium
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 9
- 239000010931 gold Substances 0.000 abstract 9
- 229910052737 gold Inorganic materials 0.000 abstract 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 7
- 229910052804 chromium Inorganic materials 0.000 abstract 7
- 239000011651 chromium Substances 0.000 abstract 7
- 238000005530 etching Methods 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 5
- 229910052759 nickel Inorganic materials 0.000 abstract 5
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
- H10D30/871—Vertical FETs having Schottky gate electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH313168A CH471242A (de) | 1968-03-01 | 1968-03-01 | Verfahren zur selektiven Maskierung zu bearbeitender Flächen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1261651A true GB1261651A (en) | 1972-01-26 |
Family
ID=4249277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB01127/69A Expired GB1261651A (en) | 1968-03-01 | 1969-03-03 | Method of making semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4939550B1 (enrdf_load_stackoverflow) |
| CH (1) | CH471242A (enrdf_load_stackoverflow) |
| DE (1) | DE1909290A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1600775A (enrdf_load_stackoverflow) |
| GB (1) | GB1261651A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127751A (en) * | 1982-10-06 | 1984-04-18 | Plessey Co Plc | Producing narrow features in electrical devices |
| CN116936687A (zh) * | 2023-09-18 | 2023-10-24 | 金阳(泉州)新能源科技有限公司 | 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH484517A (de) * | 1968-06-28 | 1970-01-15 | Ibm | Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters |
| FR2104704B1 (enrdf_load_stackoverflow) * | 1970-08-07 | 1973-11-23 | Thomson Csf |
-
1968
- 1968-03-01 CH CH313168A patent/CH471242A/de not_active IP Right Cessation
- 1968-12-30 FR FR1600775D patent/FR1600775A/fr not_active Expired
-
1969
- 1969-02-21 JP JP44012675A patent/JPS4939550B1/ja active Pending
- 1969-02-25 DE DE19691909290 patent/DE1909290A1/de not_active Withdrawn
- 1969-03-03 GB GB01127/69A patent/GB1261651A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127751A (en) * | 1982-10-06 | 1984-04-18 | Plessey Co Plc | Producing narrow features in electrical devices |
| CN116936687A (zh) * | 2023-09-18 | 2023-10-24 | 金阳(泉州)新能源科技有限公司 | 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法 |
| CN116936687B (zh) * | 2023-09-18 | 2023-12-15 | 金阳(泉州)新能源科技有限公司 | 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1600775A (enrdf_load_stackoverflow) | 1970-07-27 |
| DE1909290A1 (de) | 1969-09-25 |
| CH471242A (de) | 1969-04-15 |
| JPS4939550B1 (enrdf_load_stackoverflow) | 1974-10-26 |
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