DE1771538A1 - Verfahren zur Herstellung von Siliziumnitrid-Filmen - Google Patents

Verfahren zur Herstellung von Siliziumnitrid-Filmen

Info

Publication number
DE1771538A1
DE1771538A1 DE19681771538 DE1771538A DE1771538A1 DE 1771538 A1 DE1771538 A1 DE 1771538A1 DE 19681771538 DE19681771538 DE 19681771538 DE 1771538 A DE1771538 A DE 1771538A DE 1771538 A1 DE1771538 A1 DE 1771538A1
Authority
DE
Germany
Prior art keywords
silicon
ammonia
ratio
hydrogen
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681771538
Other languages
German (de)
English (en)
Inventor
Bean Kenneth Elwood
Gleim Paul Stanley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1771538A1 publication Critical patent/DE1771538A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Inorganic Insulating Materials (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DE19681771538 1967-06-27 1968-06-06 Verfahren zur Herstellung von Siliziumnitrid-Filmen Pending DE1771538A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64929967A 1967-06-27 1967-06-27

Publications (1)

Publication Number Publication Date
DE1771538A1 true DE1771538A1 (de) 1971-12-23

Family

ID=24604220

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681771538 Pending DE1771538A1 (de) 1967-06-27 1968-06-06 Verfahren zur Herstellung von Siliziumnitrid-Filmen

Country Status (6)

Country Link
US (1) US3549411A (https=)
JP (1) JPS4915000B1 (https=)
DE (1) DE1771538A1 (https=)
FR (1) FR1586365A (https=)
GB (1) GB1233908A (https=)
NL (1) NL6809000A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2652449A1 (de) * 1975-11-25 1977-05-26 Motorola Inc Verfahren zur ablagerung von siliziumnitrid im vakuum
EP0024305A1 (de) * 1979-08-16 1981-03-04 International Business Machines Corporation Verfahren zum Aufbringen von SiO2-Filmen mittels chemischen Niederschlagens aus der Dampfphase

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3856587A (en) * 1971-03-26 1974-12-24 Co Yamazaki Kogyo Kk Method of fabricating semiconductor memory device gate
JPS50110023U (https=) * 1974-02-14 1975-09-08
JPS5193874A (en) * 1975-02-15 1976-08-17 Handotaisochino seizohoho
US4058579A (en) * 1975-02-27 1977-11-15 Union Carbide Corporation Process for producing an improved boron nitride crucible
US3960620A (en) * 1975-04-21 1976-06-01 Rca Corporation Method of making a transmission mode semiconductor photocathode
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si
DE2557079C2 (de) * 1975-12-18 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen einer Maskierungsschicht
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
DE2967704D1 (de) * 1978-06-14 1991-06-13 Fujitsu Ltd Verfahren zur herstellung einer halbleiteranordnung mit einer isolierschicht.
US4319803A (en) * 1978-11-24 1982-03-16 Hewlett-Packard Company Optical fiber coating
JPS5587444A (en) 1978-12-26 1980-07-02 Fujitsu Ltd Method of forming insulating film on semiconductor surface
US4320248A (en) * 1979-08-13 1982-03-16 Shunpei Yamazaki Semiconductor photoelectric conversion device
US4273828A (en) * 1979-08-14 1981-06-16 Rca Corporation Bulk glass having improved properties
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
US4395438A (en) * 1980-09-08 1983-07-26 Amdahl Corporation Low pressure chemical vapor deposition of silicon nitride films
US4342617A (en) * 1981-02-23 1982-08-03 Intel Corporation Process for forming opening having tapered sides in a plasma nitride layer
CA1163231A (en) * 1981-07-24 1984-03-06 Don E. Brodie Reactive plating method and product
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
US4546372A (en) * 1983-04-11 1985-10-08 United Technologies Corporation Phosphorous-nitrogen based glasses for the passivation of III-V semiconductor materials
US4443489A (en) * 1983-05-10 1984-04-17 United Technologies Corporation Method for the formation of phosphorous-nitrogen based glasses useful for the passivation of III-V semiconductor materials
US5172203A (en) * 1983-12-23 1992-12-15 Sony Corporation Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
US5162892A (en) * 1983-12-24 1992-11-10 Sony Corporation Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer
US4996082A (en) * 1985-04-26 1991-02-26 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
US4789560A (en) * 1986-01-08 1988-12-06 Advanced Micro Devices, Inc. Diffusion stop method for forming silicon oxide during the fabrication of IC devices
US5041888A (en) * 1989-09-18 1991-08-20 General Electric Company Insulator structure for amorphous silicon thin-film transistors
US5077587A (en) * 1990-10-09 1991-12-31 Eastman Kodak Company Light-emitting diode with anti-reflection layer optimization
US5135877A (en) * 1990-10-09 1992-08-04 Eastman Kodak Company Method of making a light-emitting diode with anti-reflection layer optimization
US5926739A (en) 1995-12-04 1999-07-20 Micron Technology, Inc. Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
US6300253B1 (en) 1998-04-07 2001-10-09 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
US6323139B1 (en) * 1995-12-04 2001-11-27 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials
US6051511A (en) * 1997-07-31 2000-04-18 Micron Technology, Inc. Method and apparatus for reducing isolation stress in integrated circuits
JP3827839B2 (ja) * 1997-11-27 2006-09-27 富士通株式会社 半導体装置の製造方法
US6165568A (en) * 1998-02-09 2000-12-26 Micron Technology, Inc. Methods for forming field emission display devices
US5985771A (en) * 1998-04-07 1999-11-16 Micron Technology, Inc. Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
US6316372B1 (en) 1998-04-07 2001-11-13 Micron Technology, Inc. Methods of forming a layer of silicon nitride in a semiconductor fabrication process
US6635530B2 (en) * 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
US7550067B2 (en) * 2004-06-25 2009-06-23 Guardian Industries Corp. Coated article with ion treated underlayer and corresponding method
US8586862B2 (en) * 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US20110114152A1 (en) * 2009-11-18 2011-05-19 Solar Wind Ltd. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8796060B2 (en) * 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US20110114147A1 (en) * 2009-11-18 2011-05-19 Solar Wind Ltd. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
DE102011081863A1 (de) * 2011-08-31 2013-02-28 Robert Bosch Gmbh Solarzelle und Verfahren zu deren Herstellung
CN119980184B (zh) * 2025-03-05 2025-11-07 江西汉可泛半导体技术有限公司 一种沉积高质量氮化硅薄膜的方法及其系统

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1190308A (fr) * 1958-01-21 1959-10-12 Manufactures Des Galces Et Pro Creusets ou pièces analogues en matière réfractaire et procédé pour leur fabrication
US3017251A (en) * 1958-08-19 1962-01-16 Du Pont Process for the production of silicon
DE1136315B (de) * 1961-07-05 1962-09-13 Kali Chemie Ag Verfahren zur Herstellung von Siliciumnitriden
GB1006803A (en) * 1963-05-10 1965-10-06 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2652449A1 (de) * 1975-11-25 1977-05-26 Motorola Inc Verfahren zur ablagerung von siliziumnitrid im vakuum
EP0024305A1 (de) * 1979-08-16 1981-03-04 International Business Machines Corporation Verfahren zum Aufbringen von SiO2-Filmen mittels chemischen Niederschlagens aus der Dampfphase

Also Published As

Publication number Publication date
NL6809000A (https=) 1968-12-30
US3549411A (en) 1970-12-22
JPS4915000B1 (https=) 1974-04-11
FR1586365A (https=) 1970-02-20
GB1233908A (https=) 1971-06-03

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