DE69201692T2 - Verfahren zur Herstellung eines Kristalles mit einem Gittergradient. - Google Patents

Verfahren zur Herstellung eines Kristalles mit einem Gittergradient.

Info

Publication number
DE69201692T2
DE69201692T2 DE69201692T DE69201692T DE69201692T2 DE 69201692 T2 DE69201692 T2 DE 69201692T2 DE 69201692 T DE69201692 T DE 69201692T DE 69201692 T DE69201692 T DE 69201692T DE 69201692 T2 DE69201692 T2 DE 69201692T2
Authority
DE
Germany
Prior art keywords
crystal
producing
lattice gradient
lattice
gradient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69201692T
Other languages
English (en)
Other versions
DE69201692D1 (de
Inventor
Alain Escoffier
Roland Madar
Andreas Magerl
Eric Mastromatteo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LAUE MAX INST
Institut Polytechnique de Grenoble
Original Assignee
LAUE MAX INST
Institut Polytechnique de Grenoble
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LAUE MAX INST, Institut Polytechnique de Grenoble filed Critical LAUE MAX INST
Publication of DE69201692D1 publication Critical patent/DE69201692D1/de
Application granted granted Critical
Publication of DE69201692T2 publication Critical patent/DE69201692T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/059—Germanium on silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
DE69201692T 1991-07-05 1992-07-02 Verfahren zur Herstellung eines Kristalles mit einem Gittergradient. Expired - Fee Related DE69201692T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9109109A FR2678647A1 (fr) 1991-07-05 1991-07-05 Procede de fabrication d'un cristal a gradient de maille.

Publications (2)

Publication Number Publication Date
DE69201692D1 DE69201692D1 (de) 1995-04-20
DE69201692T2 true DE69201692T2 (de) 1995-11-23

Family

ID=9415276

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201692T Expired - Fee Related DE69201692T2 (de) 1991-07-05 1992-07-02 Verfahren zur Herstellung eines Kristalles mit einem Gittergradient.

Country Status (4)

Country Link
US (1) US5281299A (de)
EP (1) EP0524114B1 (de)
DE (1) DE69201692T2 (de)
FR (1) FR2678647A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773177B1 (fr) * 1997-12-29 2000-03-17 France Telecom Procede d'obtention d'une couche de germanium ou silicium monocristallin sur un substrat de silicium ou germanium monocristallin, respectivement, et produits multicouches obtenus
FR2783254B1 (fr) * 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
WO2001003590A1 (en) 1999-07-09 2001-01-18 Prism Enterprises, Inc. Obstetrical vacuum extractor cup
US6905542B2 (en) * 2001-05-24 2005-06-14 Arkadii V. Samoilov Waveguides such as SiGeC waveguides and method of fabricating the same
WO2004081987A2 (en) * 2003-03-12 2004-09-23 Asm America, Inc. Sige rectification process
WO2004081986A2 (en) * 2003-03-12 2004-09-23 Asm America Inc. Method to planarize and reduce defect density of silicon germanium
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
US7799600B2 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Doped diamond LED devices and associated methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5858317B2 (ja) * 1978-06-12 1983-12-24 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 気相成長法
US4357183A (en) * 1980-08-13 1982-11-02 Massachusetts Institute Of Technology Heteroepitaxy of germanium silicon on silicon utilizing alloying control
JPS5998533A (ja) * 1982-11-26 1984-06-06 Hitachi Ltd 半導体基板およびその製造方法
KR900002687B1 (ko) * 1985-12-16 1990-04-23 후지쓰가부시끼가이샤 Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법
US4804639A (en) * 1986-04-18 1989-02-14 Bell Communications Research, Inc. Method of making a DH laser with strained layers by MBE
JPS6410726A (en) * 1987-07-02 1989-01-13 Fujitsu Ltd Bus potential hold circuit
US4981818A (en) * 1990-02-13 1991-01-01 General Electric Company Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors

Also Published As

Publication number Publication date
US5281299A (en) 1994-01-25
DE69201692D1 (de) 1995-04-20
EP0524114A1 (de) 1993-01-20
FR2678647A1 (fr) 1993-01-08
EP0524114B1 (de) 1995-03-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee