DE68915873T2 - Verfahren zur Herstellung von monomolekularen Adsorptionsfilmen oder aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- oder Diacetylenbindungen enthalten. - Google Patents

Verfahren zur Herstellung von monomolekularen Adsorptionsfilmen oder aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- oder Diacetylenbindungen enthalten.

Info

Publication number
DE68915873T2
DE68915873T2 DE68915873T DE68915873T DE68915873T2 DE 68915873 T2 DE68915873 T2 DE 68915873T2 DE 68915873 T DE68915873 T DE 68915873T DE 68915873 T DE68915873 T DE 68915873T DE 68915873 T2 DE68915873 T2 DE 68915873T2
Authority
DE
Germany
Prior art keywords
films
monomolecular
production
built
silanes containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68915873T
Other languages
English (en)
Other versions
DE68915873D1 (de
Inventor
Hideharu Tamura
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63160061A external-priority patent/JPH0671576B2/ja
Priority claimed from JP63168205A external-priority patent/JPH0777274B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE68915873D1 publication Critical patent/DE68915873D1/de
Publication of DE68915873T2 publication Critical patent/DE68915873T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/361—Organic materials
    • G02F1/3615—Organic materials containing polymers
    • G02F1/3617—Organic materials containing polymers having the non-linear optical group in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/124—Intrinsically conductive polymers
    • H01B1/125—Intrinsically conductive polymers comprising aliphatic main chains, e.g. polyactylenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3128—Organic layers, e.g. photoresist by Langmuir-Blodgett techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
DE68915873T 1988-06-28 1989-06-27 Verfahren zur Herstellung von monomolekularen Adsorptionsfilmen oder aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- oder Diacetylenbindungen enthalten. Expired - Fee Related DE68915873T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63160061A JPH0671576B2 (ja) 1988-06-28 1988-06-28 単分子吸着累積膜形成方法
JP63168205A JPH0777274B2 (ja) 1988-07-06 1988-07-06 単分子吸着膜形成方法

Publications (2)

Publication Number Publication Date
DE68915873D1 DE68915873D1 (de) 1994-07-14
DE68915873T2 true DE68915873T2 (de) 1994-10-27

Family

ID=26486661

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68915873T Expired - Fee Related DE68915873T2 (de) 1988-06-28 1989-06-27 Verfahren zur Herstellung von monomolekularen Adsorptionsfilmen oder aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- oder Diacetylenbindungen enthalten.
DE68927865T Expired - Fee Related DE68927865T2 (de) 1988-06-28 1989-06-27 Verfahren zur Herstellung von aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- bindungen enthalten

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE68927865T Expired - Fee Related DE68927865T2 (de) 1988-06-28 1989-06-27 Verfahren zur Herstellung von aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- bindungen enthalten

Country Status (3)

Country Link
US (1) US5035782A (de)
EP (2) EP0584891B1 (de)
DE (2) DE68915873T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10214210A1 (de) * 2002-03-28 2003-11-06 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip zur Flip-Chip-Montage auf einen lotbedeckten Träger und Verfahren zu dessen Herstellung

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07103190B2 (ja) * 1989-02-15 1995-11-08 松下電器産業株式会社 有機導電性薄膜とその製造方法
US5260115A (en) * 1989-02-15 1993-11-09 Matsushita Electric Industrial Co., Ltd. Organic electro-conductive thin films and process for production thereof
US5204126A (en) * 1990-02-06 1993-04-20 Nanofilm Corporation Mold surfaces with ultra thin release films
JP2507153B2 (ja) * 1990-07-31 1996-06-12 松下電器産業株式会社 有機デバイスとその製造方法
JPH0763670B2 (ja) * 1991-02-06 1995-07-12 松下電器産業株式会社 有機コーティング膜の製造方法
EP0511590B1 (de) * 1991-04-30 1997-10-15 Matsushita Electric Industrial Co., Ltd. Funktionell laminierte, chemisch adsorbierte Schicht und Verfahren zu deren Herstellung
JPH0517595A (ja) * 1991-07-15 1993-01-26 Matsushita Electric Ind Co Ltd 高分子超薄膜エレクトレツト及びその製造方法
EP0571896B1 (de) * 1992-05-27 1996-08-28 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung eines chemisch adsorbierten Filmes
JP3140189B2 (ja) * 1992-07-29 2001-03-05 松下電器産業株式会社 潤滑膜およびその製造方法
US5512328A (en) * 1992-08-07 1996-04-30 Hitachi, Ltd. Method for forming a pattern and forming a thin film used in pattern formation
AU6700998A (en) * 1997-03-14 1998-09-29 University Of Houston, The Methods for making fluorinated surface modifying agents, methods of using same and products made using same
US6319566B1 (en) * 1997-11-12 2001-11-20 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6878417B2 (en) * 1997-11-12 2005-04-12 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6156393A (en) * 1997-11-12 2000-12-05 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
WO2001004954A1 (en) * 1999-07-08 2001-01-18 Nanocell, Inc. Semiconductor devices and process for manufacture
EP1206975A3 (de) * 2000-11-14 2004-07-14 Matsushita Electric Industrial Co., Ltd. Chemisch adsorbierende Lösung und Verfahren zur Herstellung einer chemisch absorbierten Schicht mit dieser Lösung
US7084060B1 (en) 2005-05-04 2006-08-01 International Business Machines Corporation Forming capping layer over metal wire structure using selective atomic layer deposition
JP4331256B2 (ja) * 2006-04-12 2009-09-16 パナソニック株式会社 有機分子膜構造体の形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL60116A (en) * 1979-06-25 1984-04-30 University Patents Inc Coating process and articles coated thereby
JPS58206005A (ja) * 1982-05-24 1983-12-01 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 被膜組成物およびその被膜を設けてなる電子回路
US4539061A (en) * 1983-09-07 1985-09-03 Yeda Research And Development Co., Ltd. Process for the production of built-up films by the stepwise adsorption of individual monolayers
FR2552055B1 (fr) * 1983-09-19 1986-07-18 Dba Dispositif de montage d'un capuchon protecteur sur un support
US4751171A (en) * 1984-07-03 1988-06-14 Matsushita Electric Industrial Co., Ltd. Pattern forming method
JPS6194042A (ja) * 1984-10-16 1986-05-12 Matsushita Electric Ind Co Ltd 分子構築体およびその製造方法
JPS61121016A (ja) * 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd 光フアイバ−およびその製造方法
JPS61122925A (ja) * 1984-11-19 1986-06-10 Matsushita Electric Ind Co Ltd 記録媒体の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10214210A1 (de) * 2002-03-28 2003-11-06 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip zur Flip-Chip-Montage auf einen lotbedeckten Träger und Verfahren zu dessen Herstellung
US6927425B2 (en) 2002-03-28 2005-08-09 Osram Opto Semiconductors Gmbh Luminescent diode chip that is flip-chip mounted on a carrier, and method for production thereof
US7663155B2 (en) 2002-03-28 2010-02-16 Osram Opto Semiconductors Gmbh Luminescent diode chip that is flip-chip mounted on a carrier, and method for production thereof
DE10214210B4 (de) * 2002-03-28 2011-02-10 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip zur Flip-Chip-Montage auf einen lotbedeckten Träger und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
EP0584891A3 (en) 1994-08-17
EP0584891A2 (de) 1994-03-02
DE68927865D1 (de) 1997-04-17
DE68927865T2 (de) 1997-07-31
US5035782A (en) 1991-07-30
EP0351092A3 (en) 1990-10-10
EP0351092A2 (de) 1990-01-17
EP0351092B1 (de) 1994-06-08
DE68915873D1 (de) 1994-07-14
EP0584891B1 (de) 1997-03-12

Similar Documents

Publication Publication Date Title
DE68915873D1 (de) Verfahren zur Herstellung von monomolekularen Adsorptionsfilmen oder aus monomolekularen Schichten aufgebauten Filmen unter Anwendung von Silanen, die Acetylen- oder Diacetylenbindungen enthalten.
DE3382793T2 (de) Verfahren zur Herstellung eines hochfesten Schichtmaterials.
DE68915636D1 (de) Verfahren zur Herstellung von gegossenen Folien aus Fluorpolymeren mit hoher Produktivität.
DE69231328D1 (de) Verfahren zur Herstellung dünner Schichten aus Halbleitermaterial
DE69410301T2 (de) Verfahren zur Herstellung funktioneller niedergeschlagener Schichten
DE3789213D1 (de) Vorrichtung und verfahren zur herstellung eines verbundkörpers aus schichtmaterial.
DE3850285T2 (de) Verfahren zur Herstellung von dünnen supraleitenden Schichten.
DE68909676D1 (de) Verfahren zur Herstellung von Folien aus thermoplastischen Kunststoffen.
ATA554677A (de) Verfahren zur herstellung von orientierten, gegen die einwirkung von ultraviolettstrahlen geschuetzten platten bzw. folien aus thermo- plastischem kunstharz
DE3650118D1 (de) Verfahren zur Herstellung von Mehrschichtwerkstoffen aus Kunststoff.
DE3870511D1 (de) Schicht oder film aus transparentem kunstharz, verfahren zur herstellung und verwendung.
ATA146576A (de) Verfahren zur herstellung von polymerisaten aus konjugierten dienen oder von kopolymerisaten aus konjugierten dienen entweder untereinander oder mit einer vinylaromatischen verbindung
DE59301293D1 (de) Verfahren zur Herstellung von Vinylglykolen, durch Isomerisierung
DE68922147D1 (de) Verfahren zur Herstellung eines Kautschuklaminats.
PT72197A (de) Verfahren zur herstellung von micheldraehten mit zwei isolierschichten aus unterschiedlichen materialien durch extrusion von thermoplasten
DE3852367T2 (de) Verfahren zur Herstellung von Werkstoffen aus Polyäthylen.
DE59004588D1 (de) Verfahren zur Herstellung von Purpurmembran enthaltend Bacteriorhodopsin.
DE3854407T2 (de) Verfahren zur selektiven Herstellung von III-V Halbleiterschichten.
DE3887605T2 (de) Verfahren zur Herstellung eines Verbundmaterials.
DE3678488D1 (de) Verfahren zur herstellung eines kunststoffartikels aus mehreren thermoplastischen materialschichten.
PT73966B (de) Verfahren zur herstellung von formkoerpern aus thermo- plastischem material
DE68925459T2 (de) Verfahren zur Herstellung dünner Schichten metastabiler binärer Verbindungen
AT379544B (de) Verfahren zur herstellung von reifen aus giessfaehigen kunststoffen od.dgl.
AT359743B (de) Verfahren zur herstellung von abriebfestem werkstoff, insbesondere in form von maschinen- teilen aus kunststoff
ATA107077A (de) Verfahren zur herstellung von neuen 2,2-dimethyl-3-(2',2'-dicklorvinyl)- cyclopropan-carbonsaeure-derivaten

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee