DE1639502B1 - Thermoelektrische Anordnung - Google Patents
Thermoelektrische AnordnungInfo
- Publication number
- DE1639502B1 DE1639502B1 DE19621639502D DE1639502DA DE1639502B1 DE 1639502 B1 DE1639502 B1 DE 1639502B1 DE 19621639502 D DE19621639502 D DE 19621639502D DE 1639502D A DE1639502D A DE 1639502DA DE 1639502 B1 DE1639502 B1 DE 1639502B1
- Authority
- DE
- Germany
- Prior art keywords
- percent
- mol percent
- temperature
- effectiveness
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 7
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 229910021589 Copper(I) bromide Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0079426 | 1962-05-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1639502B1 true DE1639502B1 (de) | 1969-11-06 |
Family
ID=7508190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19621639502D Pending DE1639502B1 (de) | 1962-05-12 | 1962-05-12 | Thermoelektrische Anordnung |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS4823717B1 (https=) |
| DE (1) | DE1639502B1 (https=) |
| GB (1) | GB994286A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4588520A (en) * | 1982-09-03 | 1986-05-13 | Energy Conversion Devices, Inc. | Powder pressed thermoelectric materials and method of making same |
-
1962
- 1962-05-12 DE DE19621639502D patent/DE1639502B1/de active Pending
-
1963
- 1963-05-10 GB GB18728/63A patent/GB994286A/en not_active Expired
- 1963-05-11 JP JP38024798A patent/JPS4823717B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4823717B1 (https=) | 1973-07-16 |
| GB994286A (en) | 1965-06-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69919276T2 (de) | Thermoelektrisches Modul und Lotverbindung für dessen Herstellung | |
| US2685608A (en) | Thermoelement, particularly for the electrothermic production of cold | |
| DE1197945B (de) | Thermoelektrische Kuehleinrichtung | |
| DE1539275B2 (de) | PeltiT-Element | |
| DE1200905B (de) | Verfahren zur Umwandlung von Waermeenergie in elektrische Energie und Thermoelement zur Durchfuehrung dieses Verfahrens | |
| DE102010018760A1 (de) | Thermoelektrisches Material mit einer mit mehreren Übergangsmetallen dotierten Typ I-Clathrat-Kristallstruktur | |
| CH407265A (de) | Thermoelektrischer Wandler | |
| DE1295195B (de) | Thermoelektrisches Halbleitermaterial | |
| DE1639502B1 (de) | Thermoelektrische Anordnung | |
| DE1240288B (de) | Thermoelektrische Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| US2788382A (en) | Tellurium-bismuth thermoelectric element | |
| DE1131763B (de) | Material fuer Schenkel von Thermoelementen bzw. Peltierelementen | |
| DE1414631B2 (de) | Thermoelektrische anordnung mit einem mischkristall als thermoelementschenkel | |
| DE1200400B (de) | Thermoelektrische Anordnung | |
| DE1162436B (de) | Thermoelektrische Anordnung | |
| DE1277967C2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere einer thermoelektrischen Halbleiteranordnung | |
| DE1290613B (de) | Thermoelektrische Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE1076210B (de) | Thermoelektrische Kombination, insbesondere Thermosaeule | |
| DE1241507B (de) | Thermoelektrische Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE1298286B (de) | Verfahren zur Herstellung einer thermoelektrischen Verbindung fuer den Gebrauch bei hohen Temperaturen | |
| DE2165169C3 (de) | Legierung, Herstellung derselben und Verwendung derselben für Vorrichtungen zur unmittelbaren thermoelektrischen Energieumwandlung | |
| DE1295044B (de) | N-leitende Legierung fuer Thermoelement-Schenkel | |
| DE1539315A1 (de) | Thermoelement,Krafterzeugungs-Vorrichtung und Verfahren | |
| DE1489277A1 (de) | Thermoelektrische Halbleitervorrichtung | |
| DE1223564B (de) | Thermoelektrische Legierung auf Tellurbasis und Verfahren zur Herstellung der Legierung |