DE1614605B2 - Kondensatordielektrikum mit inneren Sperrschichten und geringerer Temperaturabhängigkeit - Google Patents
Kondensatordielektrikum mit inneren Sperrschichten und geringerer TemperaturabhängigkeitInfo
- Publication number
- DE1614605B2 DE1614605B2 DE1614605A DE1614605A DE1614605B2 DE 1614605 B2 DE1614605 B2 DE 1614605B2 DE 1614605 A DE1614605 A DE 1614605A DE 1614605 A DE1614605 A DE 1614605A DE 1614605 B2 DE1614605 B2 DE 1614605B2
- Authority
- DE
- Germany
- Prior art keywords
- crystallites
- conduction
- capacitor
- percent
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000003990 capacitor Substances 0.000 title claims description 47
- 230000004888 barrier function Effects 0.000 title claims description 15
- 239000000463 material Substances 0.000 claims description 32
- 239000000126 substance Substances 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000010410 layer Substances 0.000 claims description 22
- 229910052787 antimony Inorganic materials 0.000 claims description 19
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 7
- 229910002113 barium titanate Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 3
- 238000010405 reoxidation reaction Methods 0.000 claims 3
- 239000000470 constituent Substances 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 39
- 238000005245 sintering Methods 0.000 description 11
- 229910010413 TiO 2 Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 238000010671 solid-state reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910016063 BaPb Inorganic materials 0.000 description 1
- 229910015802 BaSr Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 230000005343 Curie-Weiss law Effects 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
- H01G4/1281—Semiconductive ceramic capacitors with grain boundary layer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
- C04B35/4684—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase containing lead compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/025—Other inorganic material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0111900 | 1967-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1614605A1 DE1614605A1 (de) | 1972-03-02 |
| DE1614605B2 true DE1614605B2 (de) | 1974-06-27 |
Family
ID=7531301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1614605A Ceased DE1614605B2 (de) | 1967-09-20 | 1967-09-20 | Kondensatordielektrikum mit inneren Sperrschichten und geringerer Temperaturabhängigkeit |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3569802A (enrdf_load_stackoverflow) |
| DE (1) | DE1614605B2 (enrdf_load_stackoverflow) |
| FR (1) | FR1581387A (enrdf_load_stackoverflow) |
| GB (1) | GB1204436A (enrdf_load_stackoverflow) |
| NL (1) | NL141690B (enrdf_load_stackoverflow) |
| YU (1) | YU31236B (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2659672A1 (de) * | 1976-12-30 | 1978-07-13 | Siemens Ag | Kondensatordielektrikum mit inneren sperrschichten und verfahren zu seiner herstellung |
| DE3119937A1 (de) * | 1980-05-20 | 1982-05-27 | Hideji Yokosuka Kanagawa Igarashi | Keramischer mehrschichtkondensator |
| DE3235886A1 (de) * | 1982-09-28 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer sperrschicht-keramik |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5514527B1 (enrdf_load_stackoverflow) * | 1969-08-29 | 1980-04-17 | ||
| US3920781A (en) * | 1971-04-02 | 1975-11-18 | Sprague Electric Co | Method of forming a ceramic dielectric body |
| US3933668A (en) * | 1973-07-16 | 1976-01-20 | Sony Corporation | Intergranular insulation type polycrystalline ceramic semiconductive composition |
| DE2634896C2 (de) * | 1976-08-03 | 1985-08-14 | Siemens AG, 1000 Berlin und 8000 München | Kondensatordielektrikum mit inneren Sperrschichten und Verfahren zu seiner Herstellung |
| US4192840A (en) * | 1976-08-03 | 1980-03-11 | Siemens Aktiengesellschaft | Method for producing a capacitor dielectric with inner blocking layers |
| US4131903A (en) * | 1976-08-03 | 1978-12-26 | Siemens Aktiengesellschaft | Capacitor dielectric with inner blocking layers and method for producing the same |
| DE2641701C3 (de) * | 1976-09-16 | 1980-04-17 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung eines Kondensatordielektrikums mit inneren Sperrschichten |
| JPS5517965A (en) * | 1978-07-25 | 1980-02-07 | Matsushita Electric Ind Co Ltd | Porcelain dielectric substance and method of fabricating same |
| EP0042009A1 (en) * | 1980-06-11 | 1981-12-23 | University of Illinois Foundation | Internal boundary layer ceramic compositions and process for their production |
| US4419310A (en) * | 1981-05-06 | 1983-12-06 | Sprague Electric Company | SrTiO3 barrier layer capacitor |
| US4397886A (en) * | 1981-05-06 | 1983-08-09 | Sprague Electric Company | Method for making a ceramic intergranular barrier-layer capacitor |
| GB2103422B (en) * | 1981-07-30 | 1985-02-27 | Standard Telephones Cables Ltd | Ceramic capacitors |
| JPH0692268B2 (ja) * | 1988-06-03 | 1994-11-16 | 日本油脂株式会社 | 還元再酸化型半導体セラミックコンデンサ素子 |
| JPH06102573B2 (ja) * | 1988-07-01 | 1994-12-14 | 日本油脂株式会社 | 還元再酸化型半導体セラミックコンデンサ用組成物 |
| US5166759A (en) * | 1989-03-15 | 1992-11-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure |
| US5268006A (en) * | 1989-03-15 | 1993-12-07 | Matsushita Electric Industrial Co., Ltd. | Ceramic capacitor with a grain boundary-insulated structure |
| NL8902923A (nl) * | 1989-11-27 | 1991-06-17 | Philips Nv | Keramisch lichaam uit een dielektrisch materiaal op basis van bariumtitanaat. |
| US5142437A (en) * | 1991-06-13 | 1992-08-25 | Ramtron Corporation | Conducting electrode layers for ferroelectric capacitors in integrated circuits and method |
| US5206788A (en) * | 1991-12-12 | 1993-04-27 | Ramtron Corporation | Series ferroelectric capacitor structure for monolithic integrated circuits and method |
| US5191510A (en) * | 1992-04-29 | 1993-03-02 | Ramtron International Corporation | Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices |
| US5361187A (en) * | 1993-03-11 | 1994-11-01 | Ferro Corporation | Ceramic dielectric compositions and capacitors produced therefrom |
| DE69404189T2 (de) * | 1993-03-31 | 1998-01-08 | Texas Instruments Inc | Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante |
| JP2642876B2 (ja) * | 1994-08-11 | 1997-08-20 | 工業技術院長 | チタン酸鉛系誘電体薄膜 |
| US6242299B1 (en) | 1999-04-01 | 2001-06-05 | Ramtron International Corporation | Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode |
| US9846664B2 (en) | 2010-07-09 | 2017-12-19 | Cypress Semiconductor Corporation | RFID interface and interrupt |
| US8723654B2 (en) | 2010-07-09 | 2014-05-13 | Cypress Semiconductor Corporation | Interrupt generation and acknowledgment for RFID |
| US9092582B2 (en) | 2010-07-09 | 2015-07-28 | Cypress Semiconductor Corporation | Low power, low pin count interface for an RFID transponder |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3351500A (en) * | 1963-03-13 | 1967-11-07 | Globe Union Inc | Method of forming a transistor and varistor by reduction and diffusion |
| DE1303160C2 (de) * | 1963-12-13 | 1974-06-12 | Philips Nv | Verfahren zur herstellung eines durch fremdionen halbleitend gemachten elektrischen sperrschichtkondensators |
| JPS5437289B1 (enrdf_load_stackoverflow) * | 1965-09-17 | 1979-11-14 | ||
| US3426251A (en) * | 1966-08-01 | 1969-02-04 | Sprague Electric Co | Donor-acceptor ion-modified barium titanate capacitor and process |
| US3426249A (en) * | 1966-08-01 | 1969-02-04 | Sprague Electric Co | Donor ion modified batio3 capacitor and process |
| US3419760A (en) * | 1967-06-09 | 1968-12-31 | North American Rockwell | Ionic solid state electrochemical capacitor |
-
1967
- 1967-09-20 DE DE1614605A patent/DE1614605B2/de not_active Ceased
-
1968
- 1968-09-04 NL NL686812580A patent/NL141690B/xx not_active IP Right Cessation
- 1968-09-16 US US762220A patent/US3569802A/en not_active Expired - Lifetime
- 1968-09-18 YU YU2182/68A patent/YU31236B/xx unknown
- 1968-09-19 GB GB44572/68A patent/GB1204436A/en not_active Expired
- 1968-09-19 FR FR1581387D patent/FR1581387A/fr not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2659672A1 (de) * | 1976-12-30 | 1978-07-13 | Siemens Ag | Kondensatordielektrikum mit inneren sperrschichten und verfahren zu seiner herstellung |
| DE3119937A1 (de) * | 1980-05-20 | 1982-05-27 | Hideji Yokosuka Kanagawa Igarashi | Keramischer mehrschichtkondensator |
| DE3235886A1 (de) * | 1982-09-28 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer sperrschicht-keramik |
Also Published As
| Publication number | Publication date |
|---|---|
| NL141690B (nl) | 1974-03-15 |
| DE1614605A1 (de) | 1972-03-02 |
| FR1581387A (enrdf_load_stackoverflow) | 1969-09-12 |
| US3569802A (en) | 1971-03-09 |
| NL6812580A (enrdf_load_stackoverflow) | 1969-03-24 |
| YU31236B (en) | 1973-02-28 |
| GB1204436A (en) | 1970-09-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8235 | Patent refused |