GB1204436A - Improvements in or relating to capacitors dielectrics - Google Patents
Improvements in or relating to capacitors dielectricsInfo
- Publication number
- GB1204436A GB1204436A GB44572/68A GB4457268A GB1204436A GB 1204436 A GB1204436 A GB 1204436A GB 44572/68 A GB44572/68 A GB 44572/68A GB 4457268 A GB4457268 A GB 4457268A GB 1204436 A GB1204436 A GB 1204436A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type dopant
- amount
- sept
- crystallites
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 239000003989 dielectric material Substances 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 239000011575 calcium Substances 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000009837 dry grinding Methods 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 239000011572 manganese Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000001238 wet grinding Methods 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
- H01G4/1281—Semiconductive ceramic capacitors with grain boundary layer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
- C04B35/4684—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase containing lead compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/025—Other inorganic material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0111900 | 1967-09-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1204436A true GB1204436A (en) | 1970-09-09 |
Family
ID=7531301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB44572/68A Expired GB1204436A (en) | 1967-09-20 | 1968-09-19 | Improvements in or relating to capacitors dielectrics |
Country Status (6)
Country | Link |
---|---|
US (1) | US3569802A (enrdf_load_stackoverflow) |
DE (1) | DE1614605B2 (enrdf_load_stackoverflow) |
FR (1) | FR1581387A (enrdf_load_stackoverflow) |
GB (1) | GB1204436A (enrdf_load_stackoverflow) |
NL (1) | NL141690B (enrdf_load_stackoverflow) |
YU (1) | YU31236B (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4148853A (en) | 1976-09-16 | 1979-04-10 | Siemens Aktiengesellschaft | Process for the manufacture of a capacitor dielectric with inner blocking layers |
GB2220201A (en) * | 1988-07-01 | 1990-01-04 | Nippon Oils & Fats Co Ltd | Composition for a reduction-reoxidation type semiconductive ceramic capacitor |
GB2219287B (en) * | 1988-06-03 | 1992-09-09 | Nippon Oils & Fats Co Ltd | A method for manufacturing a reduction-reoxidation type semiconductive capacitor |
US5571495A (en) * | 1994-08-11 | 1996-11-05 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Dielectric thin film of substituted lead titanate |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5514527B1 (enrdf_load_stackoverflow) * | 1969-08-29 | 1980-04-17 | ||
US3920781A (en) * | 1971-04-02 | 1975-11-18 | Sprague Electric Co | Method of forming a ceramic dielectric body |
US3933668A (en) * | 1973-07-16 | 1976-01-20 | Sony Corporation | Intergranular insulation type polycrystalline ceramic semiconductive composition |
DE2634896C2 (de) * | 1976-08-03 | 1985-08-14 | Siemens AG, 1000 Berlin und 8000 München | Kondensatordielektrikum mit inneren Sperrschichten und Verfahren zu seiner Herstellung |
US4192840A (en) * | 1976-08-03 | 1980-03-11 | Siemens Aktiengesellschaft | Method for producing a capacitor dielectric with inner blocking layers |
US4131903A (en) * | 1976-08-03 | 1978-12-26 | Siemens Aktiengesellschaft | Capacitor dielectric with inner blocking layers and method for producing the same |
DE2659672B2 (de) * | 1976-12-30 | 1980-12-04 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Kondensatordielektrikum mit inneren Sperrschichten und Verfahren zu seiner Herstellung |
JPS5517965A (en) * | 1978-07-25 | 1980-02-07 | Matsushita Electric Ind Co Ltd | Porcelain dielectric substance and method of fabricating same |
JPS56162820A (en) * | 1980-05-20 | 1981-12-15 | Kiyoshi Okazaki | Vapor bank layered laminated ceramic capacitor and method of manufacturing same |
EP0042009A1 (en) * | 1980-06-11 | 1981-12-23 | University of Illinois Foundation | Internal boundary layer ceramic compositions and process for their production |
US4419310A (en) * | 1981-05-06 | 1983-12-06 | Sprague Electric Company | SrTiO3 barrier layer capacitor |
US4397886A (en) * | 1981-05-06 | 1983-08-09 | Sprague Electric Company | Method for making a ceramic intergranular barrier-layer capacitor |
GB2103422B (en) * | 1981-07-30 | 1985-02-27 | Standard Telephones Cables Ltd | Ceramic capacitors |
DE3235886A1 (de) * | 1982-09-28 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer sperrschicht-keramik |
US5166759A (en) * | 1989-03-15 | 1992-11-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure |
US5268006A (en) * | 1989-03-15 | 1993-12-07 | Matsushita Electric Industrial Co., Ltd. | Ceramic capacitor with a grain boundary-insulated structure |
NL8902923A (nl) * | 1989-11-27 | 1991-06-17 | Philips Nv | Keramisch lichaam uit een dielektrisch materiaal op basis van bariumtitanaat. |
US5142437A (en) * | 1991-06-13 | 1992-08-25 | Ramtron Corporation | Conducting electrode layers for ferroelectric capacitors in integrated circuits and method |
US5206788A (en) * | 1991-12-12 | 1993-04-27 | Ramtron Corporation | Series ferroelectric capacitor structure for monolithic integrated circuits and method |
US5191510A (en) * | 1992-04-29 | 1993-03-02 | Ramtron International Corporation | Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices |
US5361187A (en) * | 1993-03-11 | 1994-11-01 | Ferro Corporation | Ceramic dielectric compositions and capacitors produced therefrom |
DE69404189T2 (de) * | 1993-03-31 | 1998-01-08 | Texas Instruments Inc | Leicht donatoren-dotierte Elektroden für Materialien mit hoher dielektrischer Konstante |
US6242299B1 (en) | 1999-04-01 | 2001-06-05 | Ramtron International Corporation | Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode |
US9846664B2 (en) | 2010-07-09 | 2017-12-19 | Cypress Semiconductor Corporation | RFID interface and interrupt |
US8723654B2 (en) | 2010-07-09 | 2014-05-13 | Cypress Semiconductor Corporation | Interrupt generation and acknowledgment for RFID |
US9092582B2 (en) | 2010-07-09 | 2015-07-28 | Cypress Semiconductor Corporation | Low power, low pin count interface for an RFID transponder |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3351500A (en) * | 1963-03-13 | 1967-11-07 | Globe Union Inc | Method of forming a transistor and varistor by reduction and diffusion |
DE1303160C2 (de) * | 1963-12-13 | 1974-06-12 | Philips Nv | Verfahren zur herstellung eines durch fremdionen halbleitend gemachten elektrischen sperrschichtkondensators |
JPS5437289B1 (enrdf_load_stackoverflow) * | 1965-09-17 | 1979-11-14 | ||
US3426251A (en) * | 1966-08-01 | 1969-02-04 | Sprague Electric Co | Donor-acceptor ion-modified barium titanate capacitor and process |
US3426249A (en) * | 1966-08-01 | 1969-02-04 | Sprague Electric Co | Donor ion modified batio3 capacitor and process |
US3419760A (en) * | 1967-06-09 | 1968-12-31 | North American Rockwell | Ionic solid state electrochemical capacitor |
-
1967
- 1967-09-20 DE DE1614605A patent/DE1614605B2/de not_active Ceased
-
1968
- 1968-09-04 NL NL686812580A patent/NL141690B/xx not_active IP Right Cessation
- 1968-09-16 US US762220A patent/US3569802A/en not_active Expired - Lifetime
- 1968-09-18 YU YU2182/68A patent/YU31236B/xx unknown
- 1968-09-19 GB GB44572/68A patent/GB1204436A/en not_active Expired
- 1968-09-19 FR FR1581387D patent/FR1581387A/fr not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4148853A (en) | 1976-09-16 | 1979-04-10 | Siemens Aktiengesellschaft | Process for the manufacture of a capacitor dielectric with inner blocking layers |
GB2219287B (en) * | 1988-06-03 | 1992-09-09 | Nippon Oils & Fats Co Ltd | A method for manufacturing a reduction-reoxidation type semiconductive capacitor |
GB2220201A (en) * | 1988-07-01 | 1990-01-04 | Nippon Oils & Fats Co Ltd | Composition for a reduction-reoxidation type semiconductive ceramic capacitor |
US4990323A (en) * | 1988-07-01 | 1991-02-05 | Nippon Oil & Fats Co., Ltd. | Composition for reduction-reoxidation type semiconductive ceramic capacitor |
GB2220201B (en) * | 1988-07-01 | 1992-05-20 | Nippon Oils & Fats Co Ltd | Composition for reduction-reoxidation type semiconductive ceramic capacitor |
US5571495A (en) * | 1994-08-11 | 1996-11-05 | Japan As Represented By Director General Of Agency Of Industrial Science And Technology | Dielectric thin film of substituted lead titanate |
Also Published As
Publication number | Publication date |
---|---|
NL141690B (nl) | 1974-03-15 |
DE1614605A1 (de) | 1972-03-02 |
DE1614605B2 (de) | 1974-06-27 |
FR1581387A (enrdf_load_stackoverflow) | 1969-09-12 |
US3569802A (en) | 1971-03-09 |
NL6812580A (enrdf_load_stackoverflow) | 1969-03-24 |
YU31236B (en) | 1973-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |