DE1564544B2 - Photoelektrische einrichtung und verfahren zur herstellung einer photoschicht hierfuer - Google Patents
Photoelektrische einrichtung und verfahren zur herstellung einer photoschicht hierfuerInfo
- Publication number
- DE1564544B2 DE1564544B2 DE19661564544 DE1564544A DE1564544B2 DE 1564544 B2 DE1564544 B2 DE 1564544B2 DE 19661564544 DE19661564544 DE 19661564544 DE 1564544 A DE1564544 A DE 1564544A DE 1564544 B2 DE1564544 B2 DE 1564544B2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- tellurium
- selenium
- photo
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 62
- 229910052714 tellurium Inorganic materials 0.000 claims description 58
- 229910052711 selenium Inorganic materials 0.000 claims description 45
- 239000011669 selenium Substances 0.000 claims description 45
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 44
- 239000000956 alloy Substances 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 28
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052785 arsenic Inorganic materials 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 230000000087 stabilizing effect Effects 0.000 claims description 22
- 238000001704 evaporation Methods 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 229910001215 Te alloy Inorganic materials 0.000 claims description 8
- 230000001965 increasing effect Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 7
- 229910001370 Se alloy Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 229910000967 As alloy Inorganic materials 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 description 23
- 239000011521 glass Substances 0.000 description 20
- 239000006187 pill Substances 0.000 description 15
- 238000003860 storage Methods 0.000 description 15
- 229910052792 caesium Inorganic materials 0.000 description 12
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- 229910052684 Cerium Inorganic materials 0.000 description 10
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 230000031700 light absorption Effects 0.000 description 10
- 239000010948 rhodium Substances 0.000 description 8
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000009835 boiling Methods 0.000 description 7
- 229910052703 rhodium Inorganic materials 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- BROHICCPQMHYFY-UHFFFAOYSA-N caesium chromate Chemical compound [Cs+].[Cs+].[O-][Cr]([O-])(=O)=O BROHICCPQMHYFY-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 3
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- YGHOGYIODWDOHU-UHFFFAOYSA-N [Se].[Se].[Se].[Ce].[Ce] Chemical compound [Se].[Se].[Se].[Ce].[Ce] YGHOGYIODWDOHU-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 2
- 229910001942 caesium oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KUBAIENASCDSDJ-UHFFFAOYSA-N dicesium;selenium(2-) Chemical compound [Se-2].[Cs+].[Cs+] KUBAIENASCDSDJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 150000003346 selenoethers Chemical group 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 229940007424 antimony trisulfide Drugs 0.000 description 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 1
- -1 arsenic selenide Chemical class 0.000 description 1
- WBFMCDAQUDITAS-UHFFFAOYSA-N arsenic triselenide Chemical compound [Se]=[As][Se][As]=[Se] WBFMCDAQUDITAS-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910003445 palladium oxide Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910003450 rhodium oxide Inorganic materials 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
- G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US507728A US3350595A (en) | 1965-11-15 | 1965-11-15 | Low dark current photoconductive device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1564544A1 DE1564544A1 (de) | 1970-04-30 |
| DE1564544B2 true DE1564544B2 (de) | 1971-05-19 |
Family
ID=24019868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661564544 Withdrawn DE1564544B2 (de) | 1965-11-15 | 1966-11-12 | Photoelektrische einrichtung und verfahren zur herstellung einer photoschicht hierfuer |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3350595A (enrdf_load_stackoverflow) |
| JP (1) | JPS4613044Y1 (enrdf_load_stackoverflow) |
| DE (1) | DE1564544B2 (enrdf_load_stackoverflow) |
| FR (1) | FR1501227A (enrdf_load_stackoverflow) |
| GB (1) | GB1135460A (enrdf_load_stackoverflow) |
| NL (1) | NL153377B (enrdf_load_stackoverflow) |
| SE (1) | SE334539B (enrdf_load_stackoverflow) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3405298A (en) * | 1965-03-04 | 1968-10-08 | Rca Corp | Photoconductive device having a target including a selenium blocking layer |
| US3526543A (en) * | 1966-02-28 | 1970-09-01 | Hitachi Ltd | Photoconductive film |
| US3517241A (en) * | 1966-08-31 | 1970-06-23 | Japan Broadcasting Corp | Photoconductive target comprising aluminum,selenium and arsenic triselenide layers |
| US3539883A (en) * | 1967-03-15 | 1970-11-10 | Ion Physics Corp | Antireflection coatings for semiconductor devices |
| US3990894A (en) * | 1969-10-29 | 1976-11-09 | Katsuragawa Denki Kabushiki Kaisha | Method of preparing photosensitive element for use in electrophotography |
| US3904408A (en) * | 1969-11-14 | 1975-09-09 | Canon Kk | Electrophotographic member with graded tellurium content |
| US3922579A (en) * | 1970-04-22 | 1975-11-25 | Hitachi Ltd | Photoconductive target |
| JPS4937862B1 (enrdf_load_stackoverflow) * | 1970-12-29 | 1974-10-12 | ||
| US3861913A (en) * | 1972-03-31 | 1975-01-21 | Ibm | Electrophotographic charge generation layer |
| US3890524A (en) * | 1972-06-27 | 1975-06-17 | Hitachi Ltd | Photo-conductive target comprising both solid and porous layers |
| US3890525A (en) * | 1972-07-03 | 1975-06-17 | Hitachi Ltd | Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer |
| US3783324A (en) * | 1972-09-11 | 1974-01-01 | Rca Corp | Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface |
| DE2248054B2 (de) * | 1972-09-30 | 1974-12-12 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrophotographisches Aufzeichnungsmaterial |
| DE2305407C3 (de) * | 1973-02-03 | 1978-04-06 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Elektroradiografisches Aufzeichnungsmaterial |
| US4126457A (en) * | 1973-05-30 | 1978-11-21 | Xerox Corporation | Evaporation technique for producing high temperature photoreceptor alloys |
| JPS5052927A (enrdf_load_stackoverflow) * | 1973-09-10 | 1975-05-10 | ||
| US4001014A (en) * | 1973-09-17 | 1977-01-04 | Matsushita Electric Industrial Co., Ltd. | Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness |
| US4086512A (en) * | 1973-10-27 | 1978-04-25 | U.S. Philips Corporation | Camera tube employing silicon-chalcogenide target with heterojunction |
| DE2452934A1 (de) * | 1973-12-07 | 1975-06-12 | Xerox Corp | Xerographisches element |
| JPS5530657B2 (enrdf_load_stackoverflow) * | 1974-06-14 | 1980-08-12 | ||
| US4103203A (en) * | 1974-09-09 | 1978-07-25 | Rca Corporation | Wafer mounting structure for pickup tube |
| US4132918A (en) * | 1975-09-15 | 1979-01-02 | Rca Corporation | Polycrystalline selenium imaging devices |
| US4021375A (en) * | 1975-09-15 | 1977-05-03 | Rca Corporation | Method of fabricating polycrystalline selenium imaging devices |
| JPS5244194A (en) * | 1975-10-03 | 1977-04-06 | Hitachi Ltd | Photoelectric conversion device |
| US4246510A (en) * | 1976-01-07 | 1981-01-20 | The United States Of America As Represented By The Secretary Of The Army | Retina for pyroelectric vidicon |
| US4242373A (en) * | 1976-02-20 | 1980-12-30 | Hitachi, Ltd. | Method for vapor depositing a cerium oxide film |
| JPS6051774B2 (ja) * | 1976-11-17 | 1985-11-15 | 株式会社日立製作所 | 撮像管タ−ゲツト |
| NL7805418A (nl) * | 1978-05-19 | 1979-11-21 | Philips Nv | Opneembuis. |
| NL7805417A (nl) | 1978-05-19 | 1979-11-21 | Philips Nv | Opneembuis. |
| NL7902838A (nl) * | 1979-04-11 | 1980-10-14 | Philips Nv | Opneembuis. |
| JPS55159445A (en) * | 1979-05-31 | 1980-12-11 | Ricoh Co Ltd | Electrophotographic receptor |
| JPS56103477A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Photoelectric conversion element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3310700A (en) * | 1964-05-28 | 1967-03-21 | Rca Corp | Photoconductive device incorporating stabilizing layers on the face of the selenium layer |
-
1965
- 1965-11-15 US US507728A patent/US3350595A/en not_active Expired - Lifetime
-
1966
- 1966-10-18 GB GB46631/66A patent/GB1135460A/en not_active Expired
- 1966-11-10 FR FR83269A patent/FR1501227A/fr not_active Expired
- 1966-11-12 DE DE19661564544 patent/DE1564544B2/de not_active Withdrawn
- 1966-11-14 SE SE15544/66A patent/SE334539B/xx unknown
- 1966-11-14 NL NL666616015A patent/NL153377B/xx not_active IP Right Cessation
-
1968
- 1968-12-10 JP JP1968107653U patent/JPS4613044Y1/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1501227A (fr) | 1967-11-10 |
| GB1135460A (en) | 1968-12-04 |
| NL153377B (nl) | 1977-05-16 |
| DE1564544A1 (de) | 1970-04-30 |
| SE334539B (enrdf_load_stackoverflow) | 1971-04-26 |
| JPS4613044Y1 (enrdf_load_stackoverflow) | 1971-05-10 |
| NL6616015A (enrdf_load_stackoverflow) | 1967-05-16 |
| US3350595A (en) | 1967-10-31 |
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