GB1135460A - Photoconductive device and method - Google Patents
Photoconductive device and methodInfo
- Publication number
- GB1135460A GB1135460A GB46631/66A GB4663166A GB1135460A GB 1135460 A GB1135460 A GB 1135460A GB 46631/66 A GB46631/66 A GB 46631/66A GB 4663166 A GB4663166 A GB 4663166A GB 1135460 A GB1135460 A GB 1135460A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- photo
- selenium
- electrode
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 4
- 229910052711 selenium Inorganic materials 0.000 abstract 4
- 239000011669 selenium Substances 0.000 abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 229910052714 tellurium Inorganic materials 0.000 abstract 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- 229910052684 Cerium Inorganic materials 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 150000003346 selenoethers Chemical class 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
- G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Light Receiving Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
1,135,460. Image pick-up tubes; photoconductive elements. RADIO CORPORATION OF AMERICA. 18 Oct., 1966 [15 Nov., 1966], No. 46631/66. Headings H1D and H1K. [Also in Division C7] In a photo-conductive element, such as a target for a pick-up tube, comprising an electrode associated with a photo-conductive layer consisting primarily of selenium and tellurium, the tellurium content decreases uniformly from the electrode face to the opposite face. Typically the electrode is a tin oxide or rhodium deposit on a glass face plate and the photo-conductive layer, which preferably contains arsenic, abuts it. Alternatively, a layer of low work function material such as pure selenium, or caesium or cerium as metal, oxide or selenide is provided between the electrode and the photo-conductor and forms a PN junction with the latter. The vitreous structure of the layer may be stabilized by a layer of suitable material at one or both faces. Gold, silver, palladium, iridium, antimony, germanium, gallium and the oxides of gallium and germanium may be used for this purpose on the electrode side and germanium, germanium oxide and antimony trioxide or trisulphide on the other. The target may be made by vapour depositing the layers in sequence on the glass face plate, the layer thicknesses being continuously monitored. Grading of the photo-conductive layer is achieved by introducing pellets of a selenium-telluriumarsenic mixture into a heated evaporation boat at a varying rate so that initially each pellet is completely evaporated before the next is introduced. Later, the rate is increased so that the composition of the layer is then determined to any increasing extent by the greater volatility of the selenium. Grading the tellurium content gives the layer as a whole a panchromatic response without sacrificing the high overall dark-resistivity and good resolution characteristic of a selenium layer.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US507728A US3350595A (en) | 1965-11-15 | 1965-11-15 | Low dark current photoconductive device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1135460A true GB1135460A (en) | 1968-12-04 |
Family
ID=24019868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB46631/66A Expired GB1135460A (en) | 1965-11-15 | 1966-10-18 | Photoconductive device and method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3350595A (en) |
| JP (1) | JPS4613044Y1 (en) |
| DE (1) | DE1564544B2 (en) |
| FR (1) | FR1501227A (en) |
| GB (1) | GB1135460A (en) |
| NL (1) | NL153377B (en) |
| SE (1) | SE334539B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3816116A (en) * | 1970-12-29 | 1974-06-11 | Canon Kk | N-type photosensitive member for electrophotography |
| US3990894A (en) * | 1969-10-29 | 1976-11-09 | Katsuragawa Denki Kabushiki Kaisha | Method of preparing photosensitive element for use in electrophotography |
| US4126457A (en) * | 1973-05-30 | 1978-11-21 | Xerox Corporation | Evaporation technique for producing high temperature photoreceptor alloys |
| FR2454176A1 (en) * | 1979-04-11 | 1980-11-07 | Philips Nv | TELEVISION TAKING TUBE, WITH IMPROVED LOCK AGAINST ELECTRON INJECTION INTO THE TARGET |
| FR2458100A1 (en) * | 1979-05-31 | 1980-12-26 | Ricoh Kk | PHOTOCONDUCTIVE MATERIAL FOR ELECTROPHOTOGRAPHIC COPYING MACHINE |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3405298A (en) * | 1965-03-04 | 1968-10-08 | Rca Corp | Photoconductive device having a target including a selenium blocking layer |
| GB1163974A (en) * | 1966-02-28 | 1969-09-10 | Hitachi Ltd | Photoconductive Film |
| US3517241A (en) * | 1966-08-31 | 1970-06-23 | Japan Broadcasting Corp | Photoconductive target comprising aluminum,selenium and arsenic triselenide layers |
| US3539883A (en) * | 1967-03-15 | 1970-11-10 | Ion Physics Corp | Antireflection coatings for semiconductor devices |
| US3904408A (en) * | 1969-11-14 | 1975-09-09 | Canon Kk | Electrophotographic member with graded tellurium content |
| US3922579A (en) * | 1970-04-22 | 1975-11-25 | Hitachi Ltd | Photoconductive target |
| US3861913A (en) * | 1972-03-31 | 1975-01-21 | Ibm | Electrophotographic charge generation layer |
| US3890524A (en) * | 1972-06-27 | 1975-06-17 | Hitachi Ltd | Photo-conductive target comprising both solid and porous layers |
| US3890525A (en) * | 1972-07-03 | 1975-06-17 | Hitachi Ltd | Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer |
| US3783324A (en) * | 1972-09-11 | 1974-01-01 | Rca Corp | Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface |
| DE2248054B2 (en) * | 1972-09-30 | 1974-12-12 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Electrophotographic recording material |
| DE2305407C3 (en) * | 1973-02-03 | 1978-04-06 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Electroradiographic recording material |
| JPS5052927A (en) * | 1973-09-10 | 1975-05-10 | ||
| US4001014A (en) * | 1973-09-17 | 1977-01-04 | Matsushita Electric Industrial Co., Ltd. | Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness |
| US4086512A (en) * | 1973-10-27 | 1978-04-25 | U.S. Philips Corporation | Camera tube employing silicon-chalcogenide target with heterojunction |
| DE2452934A1 (en) * | 1973-12-07 | 1975-06-12 | Xerox Corp | XEROGRAPHIC ELEMENT |
| JPS5530657B2 (en) * | 1974-06-14 | 1980-08-12 | ||
| US4103203A (en) * | 1974-09-09 | 1978-07-25 | Rca Corporation | Wafer mounting structure for pickup tube |
| US4021375A (en) * | 1975-09-15 | 1977-05-03 | Rca Corporation | Method of fabricating polycrystalline selenium imaging devices |
| US4132918A (en) * | 1975-09-15 | 1979-01-02 | Rca Corporation | Polycrystalline selenium imaging devices |
| JPS5244194A (en) * | 1975-10-03 | 1977-04-06 | Hitachi Ltd | Photoelectric conversion device |
| US4246510A (en) * | 1976-01-07 | 1981-01-20 | The United States Of America As Represented By The Secretary Of The Army | Retina for pyroelectric vidicon |
| US4242373A (en) * | 1976-02-20 | 1980-12-30 | Hitachi, Ltd. | Method for vapor depositing a cerium oxide film |
| JPS6051774B2 (en) * | 1976-11-17 | 1985-11-15 | 株式会社日立製作所 | Image tube target |
| NL7805418A (en) * | 1978-05-19 | 1979-11-21 | Philips Nv | TAKING TUBE. |
| JPS56103477A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Photoelectric conversion element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3310700A (en) * | 1964-05-28 | 1967-03-21 | Rca Corp | Photoconductive device incorporating stabilizing layers on the face of the selenium layer |
-
1965
- 1965-11-15 US US507728A patent/US3350595A/en not_active Expired - Lifetime
-
1966
- 1966-10-18 GB GB46631/66A patent/GB1135460A/en not_active Expired
- 1966-11-10 FR FR83269A patent/FR1501227A/en not_active Expired
- 1966-11-12 DE DE19661564544 patent/DE1564544B2/en not_active Withdrawn
- 1966-11-14 NL NL666616015A patent/NL153377B/en not_active IP Right Cessation
- 1966-11-14 SE SE15544/66A patent/SE334539B/xx unknown
-
1968
- 1968-12-10 JP JP1968107653U patent/JPS4613044Y1/ja not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3990894A (en) * | 1969-10-29 | 1976-11-09 | Katsuragawa Denki Kabushiki Kaisha | Method of preparing photosensitive element for use in electrophotography |
| US3816116A (en) * | 1970-12-29 | 1974-06-11 | Canon Kk | N-type photosensitive member for electrophotography |
| US4126457A (en) * | 1973-05-30 | 1978-11-21 | Xerox Corporation | Evaporation technique for producing high temperature photoreceptor alloys |
| FR2454176A1 (en) * | 1979-04-11 | 1980-11-07 | Philips Nv | TELEVISION TAKING TUBE, WITH IMPROVED LOCK AGAINST ELECTRON INJECTION INTO THE TARGET |
| FR2458100A1 (en) * | 1979-05-31 | 1980-12-26 | Ricoh Kk | PHOTOCONDUCTIVE MATERIAL FOR ELECTROPHOTOGRAPHIC COPYING MACHINE |
| US4286035A (en) * | 1979-05-31 | 1981-08-25 | Ricoh Company, Ltd. | Halogen doped selenium-tellurium alloy electrophotographic photoconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| US3350595A (en) | 1967-10-31 |
| DE1564544A1 (en) | 1970-04-30 |
| SE334539B (en) | 1971-04-26 |
| NL6616015A (en) | 1967-05-16 |
| JPS4613044Y1 (en) | 1971-05-10 |
| NL153377B (en) | 1977-05-16 |
| FR1501227A (en) | 1967-11-10 |
| DE1564544B2 (en) | 1971-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1135460A (en) | Photoconductive device and method | |
| US2890359A (en) | Camera tube | |
| GB902457A (en) | Improvements in or relating to thermopiles | |
| GB705533A (en) | Improvements in photoconductive targets | |
| US3398021A (en) | Method of making thin film field sustained conductivity device | |
| US3890525A (en) | Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer | |
| GB1070623A (en) | Improvements in or relating to photo-sensitive devices | |
| GB1137803A (en) | Photoconductive devices and the method for manufacturing the same | |
| US3346755A (en) | Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials | |
| GB1179985A (en) | Method of Preparing Photoconductive Layers of Substrates. | |
| US3984722A (en) | Photoconductive target of an image pickup tube and method for manufacturing the same | |
| US3142586A (en) | Method for the manufacture of photosensitive elements | |
| GB748302A (en) | Improvements in or relating to x-ray sensitive elements | |
| GB1137107A (en) | Photoconductive device | |
| GB1198570A (en) | A Photoconductive Target. | |
| GB930403A (en) | Electrophotographic projection copying process | |
| US3773567A (en) | Diffused heterojunction multilayer coatings for electrostatic photography | |
| GB1043430A (en) | Radiation sensitive device | |
| GB1097447A (en) | Photoconductive device | |
| GB1311404A (en) | Photoelectric conductor devices | |
| GB1031864A (en) | Improvements in photoconductive insulating material | |
| Heimann et al. | Development of an Infra-red Vidicon-type Pick-up Tube with a Lead Sulphide Target | |
| GB1451075A (en) | Photosensitive devices | |
| GB1191923A (en) | Electrophotographic Plate and Process | |
| US3483028A (en) | Preparation of light sensitive device of enhanced photoconductive sensitivity |