GB1198570A - A Photoconductive Target. - Google Patents

A Photoconductive Target.

Info

Publication number
GB1198570A
GB1198570A GB33796/68A GB3379668A GB1198570A GB 1198570 A GB1198570 A GB 1198570A GB 33796/68 A GB33796/68 A GB 33796/68A GB 3379668 A GB3379668 A GB 3379668A GB 1198570 A GB1198570 A GB 1198570A
Authority
GB
United Kingdom
Prior art keywords
layer
resistivity
july
thick
selenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33796/68A
Inventor
Yiji Kiuchi
Kazuo Shimizu
Okio Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1198570A publication Critical patent/GB1198570A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

1,198,570. Photo-conductive targets; cathoderay tubes. TOKYO SHIBAURA ELECTRIC CO. Ltd. 16 July, 1968 [17 July, 1967], No. 33796/68. Headings H1D and H1K. A vidicon target has on its transparent electrode a first layer at least 0À5Á thick and consisting of or containing cadmium selenide and a further layer not greater than 0À6Á thick and of high resistance of another semi-conductor material. This further layer permits the entry of electrons to the target by locally providing a sharp potential gradient on the scanned surface of the first layer and cuts down the after-image by reducing the number of trapping levels otherwise present there. In an embodiment a glass window is provided with a transparent electrode on to which is evaporated a 1Á layer of cadmium selenide containing a substantial quantity of cadmium chloride and a doping quantity of cuprous chloride. The layer is annealed in nitrogen and then heated in a selenium atmosphere to increase its resistivity. A 0À4 Á layer of antimony trisulphide is then provided by evaporation. Other dopants which may be included in the selenide layer are Ag, Au, Tl, In, Ga, Al, Te, Sb, Bi, Pb, Sn, halogens, alkali metals, and alkaline earth metals. The following semiconductors may be used instead of or mixed with the antimony trisulphide: -Sb 2 Se 3 , As 2 Se 3 , As 2 S 3 , Bi 2 S 3 , Bi 2 Se 3 , CdTe, PbO, Se, ZnS and ZnSe. This layer may be made porous or solid depending on the resistivity of the basic material and the layer may consist of two or more sublayers.
GB33796/68A 1967-07-17 1968-07-16 A Photoconductive Target. Expired GB1198570A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4564067 1967-07-17

Publications (1)

Publication Number Publication Date
GB1198570A true GB1198570A (en) 1970-07-15

Family

ID=12724950

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33796/68A Expired GB1198570A (en) 1967-07-17 1968-07-16 A Photoconductive Target.

Country Status (5)

Country Link
US (2) US3571646A (en)
DE (1) DE1764682A1 (en)
FR (1) FR1582561A (en)
GB (1) GB1198570A (en)
NL (1) NL157745B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816787A (en) * 1970-08-17 1974-06-11 Tokyo Shibaura Electric Co Photoconductor comprising cadmium selenide

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791077A (en) * 1971-11-09 1973-03-01 Matsushita Electric Ind Co Ltd PHOTOELECTRIC TRANSDUCER ELEMENT
US3783324A (en) * 1972-09-11 1974-01-01 Rca Corp Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface
GB1386687A (en) * 1972-09-15 1975-03-12 Tokyo Shibaura Electric Co Image pickup tube
US3985918A (en) * 1972-10-12 1976-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a target for an image pickup tube
JPS5246772B2 (en) * 1973-05-21 1977-11-28
US3870921A (en) * 1973-09-24 1975-03-11 Xerox Corp Image intensifier tube with improved photoemitter surface
US4929867A (en) * 1988-06-03 1990-05-29 Varian Associates, Inc. Two stage light converting vacuum tube

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2997630A (en) * 1956-08-30 1961-08-22 Itt Holding switch
US3315108A (en) * 1963-12-17 1967-04-18 Rca Corp High lag, high sensitivity target having solid antimony oxysulphide and porous antimony trisulphide layers
GB1086603A (en) * 1966-03-08 1967-10-11 Gen Precision Inc Photoconductive thin film cell responding to a broad spectral range of light input
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials
US3403278A (en) * 1967-02-07 1968-09-24 Bell Telephone Labor Inc Camera tube target including n-type semiconductor having higher concentration of deep donors than shallow donors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816787A (en) * 1970-08-17 1974-06-11 Tokyo Shibaura Electric Co Photoconductor comprising cadmium selenide

Also Published As

Publication number Publication date
FR1582561A (en) 1969-10-03
NL157745B (en) 1978-08-15
DE1764682A1 (en) 1971-03-04
NL6810017A (en) 1969-01-21
US3571646A (en) 1971-03-23
USRE28156E (en) 1974-09-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee