GB1137803A - Photoconductive devices and the method for manufacturing the same - Google Patents

Photoconductive devices and the method for manufacturing the same

Info

Publication number
GB1137803A
GB1137803A GB6701/67A GB670167A GB1137803A GB 1137803 A GB1137803 A GB 1137803A GB 6701/67 A GB6701/67 A GB 6701/67A GB 670167 A GB670167 A GB 670167A GB 1137803 A GB1137803 A GB 1137803A
Authority
GB
United Kingdom
Prior art keywords
layers
sulphide
photo
lead oxide
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6701/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1137803A publication Critical patent/GB1137803A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Light Receiving Elements (AREA)

Abstract

1,137,803. Photo-conductive devices; image pick-up tubes. TOKYO SHIBAURA ELECTRIC CO. Ltd. 13 Feb., 1967 [14 Feb., 1966; 25 Feb., 1966 (3)], No. 6701/67. Headings H1D and H1K. A photo-conductive device includes layers 30 of a photo-conductive material and layers 31 either of another photo-conductive material having a different spectral response or of an insulating material. Both layers 30, 31 are less than 2Á thick, and there are at least five of each type of layer. In the embodiment the layers 30, 31 are applied to an insulating faceplate 18 of an image pick-up tube, Fig. 1 (not shown), on which is first deposited a transparent conducting film 19, Fig. 2, e.g. of tin oxide. Suitable photo-conducting materials are lead oxide and lead sulphide for layers 30, 31 having thicknesses of 0À8Á and 0À2Á and dark resistivities of greater than and less than 1011 #-cm. respectively. The layers may be intrinsic, or doped alternately N and P-type, suitable dopants being Sb, As or Bi and O, Ag, Cu or Tl respectively. Other suitable photo-conductors include oxides, sulphides, selenides and tellurides of Pb, Sb, As, Cu, Ag or Cd. If the layers 31 are required to be insulating, suitable materials include silicon monoxide, calcium fluoride and magnesium fluoride. Apparatus is described in which lead oxide and lead sulphide layers are successively deposited on the substrate by vapour deposition in a low-pressure oxygen atmosphere. The substrate may be mounted either on a rotating support which passes successively over heated lead oxide and sulphide sources (Fig. 3, not shown), or on a stationary support where it is subjected to alternate lead oxide and sulphide depositions according to the position of a rotating notched shutter between the substrate and the sources (Fig. 4, not shown). In a further embodiment additional photoconductive layers, e.g. of lead oxide containing a trace of an oxide or sulphide of a trivalent metal, such as antimony trisulphide, or of lead oxide containing a trace of an oxide or sulphide of a monovalent metal, are provided on one or both sides of the laminated structure of the invention. The invention may also be applied to light amplification.
GB6701/67A 1966-02-14 1967-02-13 Photoconductive devices and the method for manufacturing the same Expired GB1137803A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP833466 1966-02-14
JP1104466 1966-02-25
JP1104566 1966-02-25
JP1104366 1966-02-25

Publications (1)

Publication Number Publication Date
GB1137803A true GB1137803A (en) 1968-12-27

Family

ID=27454928

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6701/67A Expired GB1137803A (en) 1966-02-14 1967-02-13 Photoconductive devices and the method for manufacturing the same

Country Status (5)

Country Link
US (1) US3569763A (en)
DE (1) DE1614768A1 (en)
FR (1) FR1511816A (en)
GB (1) GB1137803A (en)
NL (1) NL6702246A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4555462A (en) * 1980-06-25 1985-11-26 Shunpei Yamazaki Printing member for electrostatic photocopying
US4889782A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Electrostatic photocopying machine
US4971872A (en) * 1980-06-25 1990-11-20 Shunpei Yamazaki Electrostatic photocopying machine
US5008171A (en) * 1980-06-25 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
USRE35198E (en) * 1978-03-03 1996-04-02 Canon Kabushiki Kaisha Image forming member for electrophotography
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5240809B2 (en) * 1972-04-07 1977-10-14
GB1386687A (en) * 1972-09-15 1975-03-12 Tokyo Shibaura Electric Co Image pickup tube
US3971932A (en) * 1974-12-02 1976-07-27 Varo, Inc. Apparatus for enhancing the long wavelength response of photodetectors
NL7603830A (en) * 1976-04-12 1977-10-14 Philips Nv TELEVISION RECORDING TUBE.
BE1007286A3 (en) * 1993-07-13 1995-05-09 Philips Electronics Nv Ray image intensifier tube.
IL143852A0 (en) * 2001-06-19 2002-04-21 Real Time Radiography Ltd Laminated semiconductor radiation detector

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2594740A (en) * 1950-02-17 1952-04-29 Forest Lee De Electronic light amplifier
NL88863C (en) * 1953-06-13
US2869010A (en) * 1955-04-28 1959-01-13 Rca Corp Interference type optical filters utilizing calcium fluoride
US2942120A (en) * 1955-12-12 1960-06-21 Rca Corp Electroluminescent storage device
US2914679A (en) * 1956-04-05 1959-11-24 Rca Corp Wavelength selective radiation responsive systems and devices

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35198E (en) * 1978-03-03 1996-04-02 Canon Kabushiki Kaisha Image forming member for electrophotography
US4555462A (en) * 1980-06-25 1985-11-26 Shunpei Yamazaki Printing member for electrostatic photocopying
US4889782A (en) * 1980-06-25 1989-12-26 Semiconductor Energy Laboratory Co., Ltd. Electrostatic photocopying machine
US4971872A (en) * 1980-06-25 1990-11-20 Shunpei Yamazaki Electrostatic photocopying machine
US5008171A (en) * 1980-06-25 1991-04-16 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5303007A (en) * 1980-06-25 1994-04-12 Semiconductor Energy Laboratory Co., Ltd. Printing apparatus for electrostatic photocopying
US5545503A (en) * 1980-06-25 1996-08-13 Semiconductor Energy Laboratory Co., Ltd. Method of making printing member for electrostatic photocopying

Also Published As

Publication number Publication date
FR1511816A (en) 1968-02-02
DE1614768A1 (en) 1971-02-04
US3569763A (en) 1971-03-09
NL6702246A (en) 1967-08-15

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